摘要:
According to one embodiment, a liquid crystal/polymer complex includes a liquid crystal material, a polymer, and a chiral agent. The liquid crystal material exhibits blue phase and contains liquid crystal molecules that are spirally arranged to form liquid crystal molecular cylinders having a spiral arrangement. The polymer maintains the arrangement and has a dendrimer-type structure including a dendrimer unit and a polymerizable unit bonded to an end of the dendrimer unit. The dendrimer unit contains a central atom and at least two branched structures bonded to the central atom and has a generation of two or more. The polymerizable unit contains a polymerizable group which can bond to a polymerizable group.
摘要:
The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要:
According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode which are arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The host material includes a polymer containing dibenzothiophene backbones represented by the following formula (1) as repeating units: wherein n is an integer of from 20 to 10,000.
摘要:
Certain embodiments provide a method of manufacturing an organic thin film solar cell comprising forming, on a first electrode, a first transport layer having an uneven pattern and a photoelectric conversion layer provided on a surface of the uneven pattern, forming a second transport layer on a second electrode, and bringing the uneven pattern having the photoelectric conversion layer is formed thereon into contact with the second transport layer to mold the second transport layer.
摘要:
According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode which are arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The host material includes a polymer containing dibenzothiophene backbones represented by the following formula (1) as repeating units: wherein n is an integer of from 20 to 10,000.
摘要:
According to one embodiment, a liquid crystal/polymer complex includes a liquid crystal material, a polymer, and a chiral agent. The liquid crystal material exhibits blue phase and contains liquid crystal molecules that are spirally arranged to form liquid crystal molecular cylinders having a spiral arrangement. The polymer maintains the arrangement and has a dendrimer-type structure including a dendrimer unit and a polymerizable unit bonded to an end of the dendrimer unit. The dendrimer unit contains a central atom and at least two branched structures bonded to the central atom and has a generation of two or more. The polymerizable unit contains a polymerizable group which can bond to a polymerizable group.
摘要:
The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
摘要:
The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.