公开(公告)号：US08724413B2

公开(公告)日：2014-05-13

申请号：US13235224

申请日：2011-09-16

Applicant: Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC: G11C11/16 ,  G11C7/06 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  G11C7/14 ,  G11C7/08

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

Abstract translation: 多状态电流切换磁存储元件包括由用于存储多于一位的信息的非磁性层分开的磁隧道结（MTJ）堆叠，其中施加到存储元件的不同电流电平导致切换到不同的 状态。

公开(公告)号：US08498148B2

公开(公告)日：2013-07-30

申请号：US13475814

申请日：2012-05-18

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: G11C11/14

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US20130087871A1

公开(公告)日：2013-04-11

申请号：US13476930

申请日：2012-05-21

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US08399943B2

公开(公告)日：2013-03-19

申请号：US13253918

申请日：2011-10-05

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82 ,  G11C11/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US08399942B2

公开(公告)日：2013-03-19

申请号：US13253916

申请日：2011-10-05

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82 ,  G11C11/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US08389301B2

公开(公告)日：2013-03-05

申请号：US13305668

申请日：2011-11-28

Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC: H01L21/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

公开(公告)号：US20120205763A1

公开(公告)日：2012-08-16

申请号：US13455888

申请日：2012-04-25

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC: H01L29/82

CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

公开(公告)号：US20120170361A1

公开(公告)日：2012-07-05

申请号：US13345600

申请日：2012-01-06

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud ASSAR

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud ASSAR

IPC: G11C11/14

CPC classification number: G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

Abstract translation: 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

公开(公告)号：US20110303998A1

公开(公告)日：2011-12-15

申请号：US13213026

申请日：2011-08-18

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

公开(公告)号：US20080246104A1

公开(公告)日：2008-10-09

申请号：US11866830

申请日：2007-10-03

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82

CPC classification number: G11C11/5607 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.

Abstract translation: 本发明的一个实施例包括多状态电流切换磁存储元件，其包括两个或多个磁隧道结（MTJ）的堆叠，每个MTJ具有自由层，并且通过形成的晶种层与堆叠中的其它MTJ分离 在隔离层上，用于存储多于一位的信息的堆栈，其中施加到存储器元件的不同电平的电流导致切换到不同的状态。