Magnetic thin film recording media having extremely low noise and high thermal stability
    63.
    发明授权
    Magnetic thin film recording media having extremely low noise and high thermal stability 有权
    具有极低噪音和高热稳定性的磁性薄膜记录介质

    公开(公告)号:US06730420B1

    公开(公告)日:2004-05-04

    申请号:US09703607

    申请日:2000-10-31

    IPC分类号: G11B566

    摘要: A magnetic medium having at least two intermediate layers between an underlayer and a magnetic layer. The first intermediate layer is designed to provide a good lattice match to the underlayer, while the second intermediate layer is designed to provide a good lattice match to the magnetic layer. Typically, the underlayer has one structure, such as body centered cube, while the magnetic layer has a second structure such as hexagonal close pack. In preferred embodiments, the transition from the one structure to the other structure occurs in the intermediate layers. For example, the first intermediate layer may be a hexagonal close pack structure. Because of the mismatch between the underlayer and the first layer, there may be crystal defects in this first intermediate layer. However, any remaining stress and mismatch is absorbed through the second layer, so that the second layer presents a substantially defect-free surface on which the magnetic layer may grow. Because the second layer is closely matched to the magnetic layer, the magnetic layer continues to grow in a defect-free fashion. In other embodiments of the present invention, a spacer layer having a hexagonal close pack structure may be used between two or more portions of a magnetic layer.

    摘要翻译: 一种在底层和磁性层之间具有至少两个中间层的磁介质。 第一中间层被设计成为底层提供良好的晶格匹配,而第二中间层被设计成提供与磁性层良好的晶格匹配。 通常,底层具有一种结构,例如体心立方体,而磁性层具有第二结构,例如六边形封闭组件。 在优选实施例中,从一个结构到另一个结构的转变发生在中间层中。 例如,第一中间层可以是六边形紧密包装结构。 由于底层和第一层之间的不匹配,在该第一中间层中可能存在晶体缺陷。 然而,通过第二层吸收任何剩余的应力和失配,使得第二层呈现出基本上无缺陷的表面,磁性层可以在其上生长。 由于第二层与磁性层紧密匹配,所以磁性层以无缺陷的方式继续生长。 在本发明的其它实施例中,可以在磁性层的两个或更多个部分之间使用具有六边形封装结构的间隔层。

    Continuous processes for the hydrolysis of cyanopyridines under
substantially adiabatic conditions
    64.
    发明授权
    Continuous processes for the hydrolysis of cyanopyridines under substantially adiabatic conditions 失效
    在基本绝热条件下水解氰基吡啶的连续方法

    公开(公告)号:US5756750A

    公开(公告)日:1998-05-26

    申请号:US798313

    申请日:1997-02-07

    CPC分类号: C07D213/803 C07D213/81

    摘要: Described are preferred processes for hydrolyzing substituted and unsubstituted cyanopyridines in the presence of a base and under substantially adiabatic conditions to produce pyridine substituted amides and/or pyridine substituted carboxylic acids. Preferred processes can be conducted in a variety of continuous reactors including cascades of reaction vessels, loop reactors or flow tube reactors. More preferred are the efficient and advantageous preparations of nicotinamide and niacin, which serve as important members of the B-vitamin complex.

    摘要翻译: 描述了在碱存在下和基本绝热条件下水解取代和未取代的氰基吡啶的优选方法,以产生吡啶取代的酰胺和/或吡啶取代的羧酸。 优选的方法可以在各种连续反应器中进行,包括级联的反应容器,环管反应器或流动管式反应器。 更优选的是作为B维生素复合物的重要成员的烟酰胺和烟酸的有效和有利的制剂。

    Magnetic tunnel junction patterning using Ta/TaN as hard mask
    65.
    发明授权
    Magnetic tunnel junction patterning using Ta/TaN as hard mask 有权
    磁隧道结图案使用Ta / TaN作为硬掩模

    公开(公告)号:US08450119B2

    公开(公告)日:2013-05-28

    申请号:US11378555

    申请日:2006-03-17

    IPC分类号: H01L29/82 H01L21/00

    CPC分类号: H01L43/12 H01L43/08

    摘要: An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.

    摘要翻译: 通过使用反应离子蚀刻(RIE)来形成已经形成双层Ta / TaN硬掩模的MTJ叠层来形成MTJ MRAM电池。 硬掩模通过图案化掩模层而形成,该掩模层通过在MTJ堆叠上的Ta层上沉积TaN层而形成。 在堆叠被图案化之后,TaN层起至少两个有利的作用:1)它在保护叠层的过程中保护Ta层免受氧化,2)它用作随后沉积的介电层具有优异粘合性能的表面。

    Magnetic tunnel junction for MRAM applications

    公开(公告)号:US20130043471A1

    公开(公告)日:2013-02-21

    申请号:US13136929

    申请日:2011-08-15

    IPC分类号: H01L29/04 H01L21/36

    摘要: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

    Systems and methods for controlling power supply current using clock gating
    67.
    发明授权
    Systems and methods for controlling power supply current using clock gating 有权
    使用时钟选通控制电源电流的系统和方法

    公开(公告)号:US08354869B1

    公开(公告)日:2013-01-15

    申请号:US13090600

    申请日:2011-04-20

    IPC分类号: G06F1/04

    CPC分类号: G06F1/324 G06F1/08 Y02D10/126

    摘要: A control system includes a clock gating module and a clock comparison module. The clock gating module is configured to generate a gating signal based on an enable signal, a given period, and a base clock signal having a given frequency. The clock comparison module is configured to generate a gated clock signal based on the base clock signal and the gating signal.

    摘要翻译: 控制系统包括时钟门控模块和时钟比较模块。 时钟选通模块被配置为基于使能信号,给定周期和具有给定频率的基本时钟信号来产生门控信号。 时钟比较模块被配置为基于基本时钟信号和门控信号产生门控时钟信号。

    METHOD, SYSTEM, AND DEVICE FOR ESTABLISHING PSEUDO WIRE
    68.
    发明申请
    METHOD, SYSTEM, AND DEVICE FOR ESTABLISHING PSEUDO WIRE 有权
    用于建立PSEUDO线的方法,系统和装置

    公开(公告)号:US20120281702A1

    公开(公告)日:2012-11-08

    申请号:US13548880

    申请日:2012-07-13

    IPC分类号: H04L12/56

    摘要: A method, a system, and a device for establishing a pseudo wire are disclosed. The method includes: receiving, by a switching provider edge at a bifurcation position, a label mapping message, obtaining information of the switching provider edge at the bifurcation position and information of at least two next hops or outgoing interfaces of the switching provider edge through parsing, comparing the information of the switching provider edge at the bifurcation position with information of a local device, and if the information of the switching provider edge at the bifurcation position matches with the information of the local device, establishing at least two pseudo wires from the switching provider edge according to the information of at least two next hops or outgoing interfaces.

    摘要翻译: 公开了一种用于建立伪线的方法,系统和装置。 该方法包括:通过分叉位置处的交换提供商边缘接收标签映射消息,通过解析获得交换提供商边缘的分叉位置处的交换提供商边缘的信息和交换提供商边缘的至少两个下一跳或出口接口的信息 将分叉位置处的交换提供商边缘的信息与本地设备的信息进行比较,并且如果分支位置处的切换提供商边缘的信息与本地设备的信息匹配,则从 根据至少两个下一跳或出站接口的信息切换提供商边缘。

    Magnetic Tunnel Junction for MRAM applications
    69.
    发明申请
    Magnetic Tunnel Junction for MRAM applications 有权
    MRAM应用的磁隧道结

    公开(公告)号:US20120181537A1

    公开(公告)日:2012-07-19

    申请号:US12930877

    申请日:2011-01-19

    IPC分类号: H01L29/82 H01L21/36 H01L29/04

    摘要: A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.

    摘要翻译: 公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ,用于改善位切换性能。 结晶层是厚度至少为6埃的Fe,Ni或FeB,其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子%的Mg,Hf,Zr,Nb或Ta。 NiFeX厚度优选在20至40埃之间,以显着减少位线切换电流和短路位数。 在替代实施例中,结晶层可以是Fe / NiFe双层。 可选地,非晶层可以具有其中M1和M2是Mg,Hf,Zr,Nb或Ta的NiFeM1 / NiFeM2构型,M1不等于M2。 在300℃至360℃退火,提供约150%的高磁阻比。

    Generating a sales volume forecast
    70.
    发明授权
    Generating a sales volume forecast 有权
    生成销量预测

    公开(公告)号:US08090614B2

    公开(公告)日:2012-01-03

    申请号:US11876984

    申请日:2007-10-23

    IPC分类号: G06F17/30

    摘要: A method for generating a sales volume forecast includes receiving user input specifying a hypothetical asking price and a future date and accessing, for each of multiple past time periods, historical data reflecting a sales volume for an item over the past time period and a corresponding price difference between an asking price and a coinciding market price for the item, the price difference also being associated with the past time period. The method also includes determining a historical correlation for the item between sales volume and price difference between asking price and coinciding market price, accessing market data reflecting a future market price for the item associated with the specified future date, determining a price difference between the specified hypothetical asking price and the future market price for the item, applying the determined historical correlation to the determined price difference to generate a sales volume forecast, and providing the generated sales volume forecast for access by a user.

    摘要翻译: 用于生成销售量预测的方法包括接收指定假设要价和未来日期的用户输入,并且对于多个过去时间段中的每一个访问反映过去时间段内的物品的销售量的历史数据和对应的价格 价格与物品的市场价格一致之间的差异,价格差异也与过去时间有关。 该方法还包括确定销售量与要价与一致市价之间的价格差异之间的项目的历史相关性,访问反映与指定未来日期相关联的项目的未来市场价格的市场数据,确定指定的 假设要价和项目的未来市场价格,将确定的历史相关性应用于确定的价格差异以产生销售量预测,以及提供所生成的销售量预测以供用户访问。