公开(公告)号：US10276826B2

公开(公告)日：2019-04-30

申请号：US15861899

申请日：2018-01-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuhiro Jinbo ,  Shingo Eguchi

IPC分类号： H01L51/00 ,  H01L51/52 ,  H01L27/32 ,  H01L33/56

摘要： A lightweight flexible light-emitting device that is less likely to be broken is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, an element layer, a first bonding layer, and a second bonding layer. The element layer includes a light-emitting element. The element layer is provided between the first flexible substrate and the second flexible substrate. The first bonding layer is provided between the first flexible substrate and the element layer. The second bonding layer is provided between the second flexible substrate and the element layer. The first and second bonding layers are in contact with each other on the outer side of an end portion of the element layer. The first and second flexible substrates are in contact with each other on the outer side of the end portions of the element layer, the first bonding layer, and the second bonding layer.

公开(公告)号：US20180315745A1

公开(公告)日：2018-11-01

申请号：US16028992

申请日：2018-07-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L27/02 ,  H01L27/12 ,  H01L23/66 ,  H01L27/13

CPC分类号： H01L27/0248 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

公开(公告)号：US09768410B2

公开(公告)日：2017-09-19

申请号：US14991359

申请日：2016-01-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Kaoru Hatano ,  Masahiro Katayama ,  Shingo Eguchi ,  Yoshiaki Oikawa ,  Ami Nakamura

IPC分类号： H01L33/00 ,  H01L51/52 ,  H05B33/04 ,  H05B33/10 ,  H05B33/22 ,  H01L33/48 ,  H01L27/146 ,  H01L33/08 ,  H01L27/32

CPC分类号： H01L51/5246 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3276 ,  H01L33/08 ,  H01L33/48 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/5278 ,  H01L2227/323 ,  H01L2251/5338 ,  H01L2251/5361 ,  H05B33/04 ,  H05B33/10 ,  H05B33/22

摘要： It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

公开(公告)号：US09666820B2

公开(公告)日：2017-05-30

申请号：US13767250

申请日：2013-02-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L29/10 ,  H01L51/50 ,  H01L27/12

CPC分类号： H01L51/5012 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78678 ,  H01L29/7869 ,  H01L51/0097

摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

公开(公告)号：US20160377918A1

公开(公告)日：2016-12-29

申请号：US15263428

申请日：2016-09-13

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Shingo Eguchi ,  Yutaka Shionoiri ,  Etsuko Fujimoto

IPC分类号： G02F1/1335 ,  H01L29/423 ,  G02F1/1343 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362

CPC分类号： G02F1/133555 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1255 ,  H01L29/42384

摘要： It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

公开(公告)号：US20160056140A1

公开(公告)日：2016-02-25

申请号：US14929715

申请日：2015-11-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L27/02 ,  H01L23/66

CPC分类号： H01L27/0248 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

摘要翻译： 为了解决由于蓄积在绝缘体中的电荷的放电（静电放电的问题）导致包括薄膜晶体管的天线或电路的电池损坏的问题，半导体器件包括第一绝缘体，包括薄膜的电路 提供在第一绝缘体上的晶体管，设置在电路上并与电路电连接的天线，以及设置在天线上的第二绝缘体，设置在第一绝缘体和电路之间的第一导电膜，以及第二导电膜 设置在第二绝缘体和天线之间。

公开(公告)号：US20150317015A1

公开(公告)日：2015-11-05

申请号：US14700527

申请日：2015-04-30

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shingo Eguchi ,  Shunpei Yamazaki

IPC分类号： G06F3/047 ,  G06F3/044 ,  G09G5/00 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3253 ,  G06F3/044 ,  G06F3/047 ,  G06F2203/04102 ,  G06F2203/04103 ,  G09G5/003 ,  G09G2300/0426 ,  H01L27/323 ,  H01L27/3248 ,  H01L51/524 ,  H01L2251/5338 ,  H01L2251/558

摘要： A flexible input/output device and an input/output device having high resistance to repeated bending are provided. The input/output device includes a first flexible substrate, a first insulating layer over the first substrate, a first transistor over the first insulating layer, a light-emitting element over and electrically connected to the first transistor and including an EL layer between first and second electrodes, a first bonding layer over the light-emitting element, a sensing element and a second transistor over the first bonding layer and electrically connected to each other, a second insulating layer over the sensing element and the second transistor, and a second flexible substrate over the second insulating layer. In the input/output device, B/A is greater than or equal to 0.7 and less than or equal to 1.7, where A is a thickness between the EL layer and the first insulating layer and B is a thickness between the EL layer and the second insulating layer.

摘要翻译： 提供了具有高抗重复弯曲能力的灵活的输入/输出装置和输入/输出装置。 所述输入/输出装置包括第一柔性基板，在所述第一基板上的第一绝缘层，所述第一绝缘层上的第一晶体管，位于所述第一晶体管之上并电连接到所述第一晶体管的发光元件， 第二电极，在发光元件上方的第一结合层，在第一接合层上方的感测元件和第二晶体管，并且彼此电连接，感测元件和第二晶体管上的第二绝缘层，以及第二柔性 衬底在第二绝缘层上。 在输入/输出装置中，B / A大于或等于0.7且小于或等于1.7，其中A是EL层和第一绝缘层之间的厚度，B是EL层和 第二绝缘层。

公开(公告)号：US09171808B2

公开(公告)日：2015-10-27

申请号：US14156744

申请日：2014-01-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shingo Eguchi

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/562 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00

摘要： In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

摘要翻译： 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中，在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过设置抵抗外部应力的抗冲击层和用于扩散冲击的冲击扩散层，减小了施加到每单位面积的半导体集成电路的力，从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。

公开(公告)号：US09088006B2

公开(公告)日：2015-07-21

申请号：US13886474

申请日：2013-05-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L29/22 ,  H01L51/52 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/5256 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L2251/5338 ,  H01L2251/558

摘要： A light-emitting device includes a light-emitting element between two substrates, a terminal portion which includes at least two terminals and is electrically connected to the light-emitting element, and an adhesive layer between the two substrates. A substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

摘要翻译： 发光装置包括两个基板之间的发光元件，包括至少两个端子并且与发光元件电连接的端子部分和两个基板之间的粘合剂层。 使用具有10ppm / K以下的热膨胀系数的基板作为与与FPC连接的端子部分重叠的基板。

公开(公告)号：US20130216709A1

公开(公告)日：2013-08-22

申请号：US13768150

申请日：2013-02-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： B05C21/00

CPC分类号： B05C21/00 ,  C23C14/042 ,  C23C14/564 ,  H01L51/001 ,  H01L51/50

摘要： A film formation apparatus that can remove a film formation material attached to a shadow mask is provided. Alternatively, a method for forming a film and a method for cleaning a shadow mask are provided. The film formation apparatus includes a film formation chamber including an evaporation source; a shadow mask transfer mechanism; and a plasma source. The shadow mask transfer mechanism includes a first mode in which a film is formed on an object to be film-formed with a film formation material ejected by the evaporation source while the object to be film-formed and a shadow mask are transferred, and a second mode in which plasma irradiation is performed by the plasma source to remove the film formation material attached to the shadow mask while the evaporation source is parted from the plasma source by a sluice valve and the shadow mask is transferred.

摘要翻译： 提供了可以去除附着在荫罩上的成膜材料的成膜装置。 或者，提供了一种用于形成膜的方法和用于清洁荫罩的方法。 成膜装置包括：成膜室，包括蒸发源; 荫罩传输机制; 和等离子体源。 荫罩传送机构包括第一模式，其中在要成膜的物体和荫罩被转印的情况下，在由蒸发源喷射的成膜材料的成膜物上形成膜，并且 第二模式，其中通过等离子体源执行等离子体照射以除去附着到荫罩的成膜材料，同时通过闸阀将蒸发源从等离子体源分离并且荫罩被传送。