公开(公告)号：US20210028112A1

公开(公告)日：2021-01-28

申请号：US16863126

申请日：2020-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Kwangjin Moon ,  Hojin Lee ,  Pilkyu Kang ,  Hoonjoo Na

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417 ,  H01L23/48 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to each other, and having an active region located on the first surface and defined by a first isolation region; a plurality of active fins arranged on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the plurality of active fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the buried conductive wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

公开(公告)号：US10049997B2

公开(公告)日：2018-08-14

申请号：US15440621

申请日：2017-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Il Choi ,  Hyoju Kim ,  Kwangjin Moon ,  Sujeong Park ,  Jubin Seo ,  Naein Lee ,  Ho-Jin Lee

IPC: H01L23/00

Abstract: A pad is disposed on a substrate. A bump structure is disposed on the pad and electrically connected to the pad. The bump structure includes a first copper layer and a second copper layer sequentially stacked on the pad and a solder ball on the second copper layer. A first X-ray diffraction (XRD) peak intensity ratio of (111) plane to (200) plane of the first copper layer is greater than a second XRD peak intensity ratio of (111) plane to (200) plane of the second copper layer.

公开(公告)号：US08836142B2

公开(公告)日：2014-09-16

申请号：US13911569

申请日：2013-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeun-Sang Park ,  Byung-Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Kwangjin Moon ,  Sukchul Bang

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.

Abstract translation: 公开了半导体器件。 半导体器件可以包括具有彼此相对的第一表面和第二表面的半导体衬底和形成在第二表面的一部分处的衬垫沟槽，穿透半导体衬底并从衬底的底表面突出的通孔 沟。 掩埋焊盘可以设置在焊盘沟槽中并且可以围绕通孔。