Method for manufacturing semiconductor device

    公开(公告)号:US10229940B2

    公开(公告)日:2019-03-12

    申请号:US15782249

    申请日:2017-10-12

    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

    Functional panel, light-emitting panel, display panel, and sensor panel

    公开(公告)号:US10228807B2

    公开(公告)日:2019-03-12

    申请号:US15698901

    申请日:2017-09-08

    Abstract: A functional panel is provided. The functional panel includes a first substrate, a second substrate, a bonding layer, a functional element, a protective layer, and a terminal. The bonding layer is positioned between the first and second substrates. The functional element is surrounded by the first substrate, the second substrate, and the bonding layer. The terminal is electrically connected to the functional element and provided not to overlap with one of the first and second substrates. The protective layer is provided to be in contact with side surfaces of the first and second substrates and an exposed surface of the bonding layer. A surface of the terminal is partly exposed without being covered with the protective layer. The surface of the terminal partly includes a material having a lower ionization tendency than hydrogen.

    Method for manufacturing semiconductor device

    公开(公告)号:US10170600B2

    公开(公告)日:2019-01-01

    申请号:US15860001

    申请日:2018-01-02

    Inventor: Yasuhiro Jinbo

    Abstract: A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer. The conductive layer is in contact with the silicon layer through the opening in the resin layer. In the step of separating the formation substrate and the transistor, the silicon layer is irradiated with light, so that silicon contained in the silicon layer reacts with a metal contained in the conductive layer, and a metal silicide layer is formed.

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