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    Nonvolatile Memory Device and Program Method Thereof
    61.
    发明申请
    Nonvolatile Memory Device and Program Method Thereof 有权
    非易失性存储器件及其程序方法

    公开(公告)号：US20130163326A1

    公开(公告)日：2013-06-27

    申请号：US13611596

    申请日：2012-09-12

    Applicant: Seung-Jun Lee ,  Yongjoon Choi ,  Jeongseok Nam

    Inventor： Seung-Jun Lee ,  Yongjoon Choi ,  Jeongseok Nam

    IPC: G11C16/06

    CPC classification number: G11C16/0483 ,  G11C16/3418 ,  G11C16/3468

    Abstract: Methods of operating nonvolatile memory devices are described. A bit line program voltage is applied to at least one selected bit line and a bit line program-inhibition voltage is applied to at least one unselected bit line. The methods further include concurrently applying a word line program voltage to a selected word line, a first pass voltage to at least one unselected word line and a second pass voltage less than the first pass voltage to at least one unselected word line immediately adjacent the selected word line on a string selection line side of the selected word line.

    Abstract translation: 描述操作非易失性存储器件的方法。 位线编程电压被施加到至少一个所选位线，并且位线编程禁止电压被施加到至少一个未选位线。 所述方法还包括同时向所选择的字线施加字线编程电压，将至少一个未选字线的第一通过电压和小于第一通过电压的第二通过电压提供给紧邻所选择的至少一个未选择字线 选定字线的字符串选择行侧的字线。

    Semiconductor device and method of fabricating the same
    62.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08395206B2

    公开(公告)日：2013-03-12

    申请号：US13014188

    申请日：2011-01-26

    Applicant: Seung-Jun Lee ,  Woonkyung Lee

    Inventor： Seung-Jun Lee ,  Woonkyung Lee

    IPC: H01L29/792

    CPC classification number: H01L21/36 ,  H01L21/02521 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

    Abstract: A semiconductor device has a substrate that includes a cell array region and a dummy pattern region surrounding the cell array region. The cell array region includes a cell structure having a plurality of cell active pillars extending in a vertical direction from the cell array region of the substrate and includes cell gate patterns and cell gate interlayer insulating patterns alternately stacked on the substrate. The cell gate patterns and cell gate interlayer insulating patterns have sides facing the cell active pillars. The dummy pattern region includes a damp-proof structure.

    Abstract translation: 半导体器件具有包括单元阵列区域和围绕单元阵列区域的虚设图案区域的基板。 单元阵列区域包括具有从基板的单元阵列区域沿垂直方向延伸的多个单元有源柱的单元结构，并且包括交替层叠在基板上的单元栅极图案和单元栅极层间绝缘图案。 单元栅极图案和单元栅极层间绝缘图案具有面向单元活性柱的侧面。 虚设图案区域包括防潮结构。

    2 stage rotary compressor
    64.
    发明授权
    2 stage rotary compressor 有权
    2级旋转压缩机

    公开(公告)号：US08342825B2

    公开(公告)日：2013-01-01

    申请号：US12741908

    申请日：2008-03-31

    Applicant: Sang-Myung Byun ,  Seung-Jun Lee ,  Yun-Hi Lee ,  Yoon-Sung Choi

    Inventor： Sang-Myung Byun ,  Seung-Jun Lee ,  Yun-Hi Lee ,  Yoon-Sung Choi

    IPC: F01C1/30 ,  F04C2/00 ,  F04C11/00

    CPC classification number: F04C18/3564 ,  F04C23/001 ,  F04C23/008 ,  F04C29/065 ,  F04C29/068 ,  F04C2250/102

    Abstract: The present invention provides a 2 stage rotary compressor (100) including a hermetic container (101), a 2 stage compression assembly provided in the hermetic container, wherein a low pressure compression assembly (120), a middle plate (130) and a high pressure compression assembly (140) are successively stacked from any one of upper and lower portions, a first discharge port (124) for discharging middle pressure refrigerant compressed in the low pressure compression assembly (120) a second discharge port (162p) for discharging high pressure refrigerant compressed in the high pressure compression assembly (130) and a third discharge port (172p) positioned at any one of the upper and lower portions of the 2 stage compression assembly to discharge high pressure refrigerant compressed in the 2 stage compression assembly to the hermetic container (101), wherein an area of the third discharge port (172p) is larger than 0.5 times of an area of the first discharge port and smaller than 1.0 times thereof. As a volume flow of refrigerant compressed in the low pressure compression assembly (120) determines a volume flow of refrigerant compressed in the entire 2 stage compression assembly, a size of the third discharge port discharging refrigerant compressed in the 2 stage compression assembly is preferably optimized at a ratio with respect to a size of the first discharge port (127). Therefore, the size of the third discharge port (172p) can be optimized to suppress noise of the compressor.

    Abstract translation: 本发明提供一种二级旋转压缩机（100），其包括密封容器（101），设置在密封容器中的二级压缩组件，其中低压压缩组件（120），中间板（130）和高 高压压缩组件（140）从上部和下部中的任一个连续堆叠，用于排出在低压压缩组件（120）中压缩的中压制冷剂的第一排出口（124），用于排出高压的第二排出口（162p） 在高压压缩组件130中被压缩的压力制冷剂和位于二级压缩组件的上部和下部中的任何一个的第三排出口（172p），以将在2级压缩组件中压缩的高压制冷剂排放到 密封容器（101），其中第三排出口（172p）的面积大于第一排出口的面积的0.5倍，小于1.0TI 其中。 由于在低压压缩组件（120）中压缩的制冷剂的体积流量决定了在整个2级压缩组件中压缩的制冷剂的体积流量，所以优选排出在2级压缩组件中压缩的制冷剂的第三排出口的尺寸 相对于第一排出口（127）的尺寸的比例。 因此，可以优化第三排出口（172p）的尺寸，以抑制压缩机的噪音。

    3D image measuring apparatus and method thereof
    65.
    发明授权
    3D image measuring apparatus and method thereof 有权
    3D图像测量装置及其方法

    公开(公告)号：US08319977B2

    公开(公告)日：2012-11-27

    申请号：US12878866

    申请日：2010-09-09

    Applicant: Kwang-Ill Koh ,  Eun-Hyoung Seong ,  Moon-Young Jeon ,  Min-Young Kim ,  Seung-Jun Lee

    Inventor： Kwang-Ill Koh ,  Eun-Hyoung Seong ,  Moon-Young Jeon ,  Min-Young Kim ,  Seung-Jun Lee

    IPC: G01B11/24

    CPC classification number: G01B11/25 ,  G01S17/89

    Abstract: A 3D measuring apparatus includes a stage, a projection portion, and an imaging portion. The projection portion includes first and second lights, first and second lattices, and first and second projection lenses. The imaging portion includes an imaging lens and a camera. The projection portion further includes a movement instrument which control the first and the second lattice simultaneously with predetermined n times.

    Abstract translation: 3D测量装置包括平台，突出部分和成像部分。 突起部分包括第一和第二光，第一和第二晶格，以及第一和第二投影透镜。 成像部分包括成像透镜和照相机。 突出部还包括运动器械，其以预定的n次同时控制第一和第二格子。

    Apparatus and method for running dual cameras in a portable terminal
    67.
    发明授权
    Apparatus and method for running dual cameras in a portable terminal 有权
    在便携式终端中运行双相机的装置和方法

    公开(公告)号：US08184165B2

    公开(公告)日：2012-05-22

    申请号：US12274648

    申请日：2008-11-20

    Applicant: Il-Seob Baek ,  Seung-Jun Lee ,  Joong-Ho Lee

    Inventor： Il-Seob Baek ,  Seung-Jun Lee ,  Joong-Ho Lee

    IPC: H04N5/225

    CPC classification number: H04N5/232

    Abstract: An apparatus and method for separating and connecting a main camera and a sub camera in a portable terminal are provided. The portable terminal includes a main camera for receiving a main clock signal from a main chip and transmitting a main camera pixel clock signal to the main chip in response to the main clock signal, a sub camera for receiving the main clock signal from the main chip and transmitting a sub camera pixel clock signal to the main chip in response to the main clock signal, and a switch for configuring a path from the main chip to at least one of the main camera and the sub camera.

    Abstract translation: 提供了一种用于在便携式终端中分离和连接主摄像机和子摄像机的装置和方法。 便携式终端包括用于从主芯片接收主时钟信号并且响应于主时钟信号将主相机像素时钟信号发送到主芯片的主相机，用于从主芯片接收主时钟信号的副相机 以及响应于所述主时钟信号将副相机像素时钟信号发送到所述主芯片，以及用于配置从所述主芯片到所述主相机和所述副相机中的至少一个的路径的开关。

    METHODS OF FABRICATING MEMORY DEVICES
    70.
    发明申请
    METHODS OF FABRICATING MEMORY DEVICES 审中-公开
    制作记忆体装置的方法

    公开(公告)号：US20110053366A1

    公开(公告)日：2011-03-03

    申请号：US12942523

    申请日：2010-11-09

    Applicant: Seung-Jun Lee

    Inventor： Seung-Jun Lee

    IPC: H01L21/3205 ,  H01L21/28

    CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L27/11524

    Abstract: Methods of fabricating a memory device can include forming a plurality of wordlines on a semiconductor substrate. A ground select line can be formed on a first side of the wordlines. A string select line can be formed on a second side of the wordlines. The wordlines can extend between the ground select line and the string select line. First spacers may be formed between the wordlines, between the ground select line and an adjacent one of the wordlines and between the string select line and an adjacent one of the wordlines. Second spacers can be formed on sidewalls of the ground select line and the string select line displaced from the first spacers. The second spacers can be formed from a different material than the first spacers.

    Abstract translation: 制造存储器件的方法可以包括在半导体衬底上形成多个字线。 地线选择线可以形成在字线的第一面上。 字线选择线可以形成在字线的第二侧上。 字线可以在接地选择线和字符串选择行之间延伸。 第一间隔物可以形成在字线之间，地线选择线与字线之间的相邻字符之间以及字符串选择线和字线之间的相邻字线之间。 第二间隔件可以形成在地选线的侧壁和从第一间隔件移位的串选择线。 第二间隔件可以由与第一间隔物不同的材料形成。

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