摘要:
A screen printing mesh including a plurality of octagonal first openings and a plurality of polygonal second openings, each of the second openings being disposed between the first openings, wherein an inner angle between a first line segment of each of the second openings and an adjacent second line segment is 90 degrees or greater.
摘要:
A liquid crystal display (LCD) ensuring excellent display quality and reducing power consumption is disclosed. The liquid crystal display (LCD) includes first and second polarity image display pixels, such that a polarity inversion of data is executed by line, column, and dot, and the polarity inversion of a common voltage is executed by frame. An inversion driving method using the liquid crystal display (LCD) is also disclosed.
摘要:
A screen printing mesh including a plurality of octagonal first openings and a plurality of polygonal second openings, each of the second openings being disposed between the first openings, wherein an inner angle between a first line segment of each of the second openings and an adjacent second line segment is 90 degrees or greater.
摘要:
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.
摘要:
An antenna may include a linear array antenna unit, a first switch, and a second switch. The linear array antenna unit may be configured to include a plurality of cable elements linearly arranged and coupled to each other. The first switch may include one end coupled to a ground and another end coupled to at least one of the plurality of cable elements of the linear array antenna unit. The second switch may include one end coupled to a power feed point and another end coupled to at least one of the plurality of cable elements. The plurality of cable elements of the linear array antenna unit may form one of a first antenna structure and a second antenna structure according to the switching operations of the first and second switches.
摘要:
A method of driving an alternating-current (AC) motor while periodically obtaining a rotator angle of the AC motor. The method includes: (a) driving the AC motor by a dS-axis voltage, which is a voltage for an exciting current in a stationary reference frame, and a qS-axis voltage, which is a voltage for generating a rotational force in the stationary reference frame, while sequentially applying different dS-axis voltages and different qS-axis voltages to the AC motor in a control injection period; and (b) obtaining a rotator angle by a dS-axis voltage value, a qS-axis voltage value, a dS-axis current value, and a qS-axis current value in the control injection period.
摘要:
An apparatus for notifying packet information using a start frame delimiter (SFD) comprises: a SFD transmission unit which generates an SFD code and transmits a packet by positioning the generated SFD code in a position corresponding to specific additional information to notify the specific additional information; and a SFD reception unit which receives the packet from the SFD transmission unit, detects the position of the SFD code positioned within the packet, and detects the additional information corresponding to the detected position.
摘要:
A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.
摘要:
An apparatus and method for reducing power consumption in a System on Chip (SoC) are provided. The SoC includes a clock unit for providing clocks to all elements included in the SoC, a Central Processing Unit (CPU) for controlling the SoC to perform designated functions, a main regulator for supplying power provided from an external battery to remaining elements included in the SoC other than a PMU, and a restoration processor for storing, in the PMU, registration information on the CPU and all peripherals included in the SoC when a transition from an active state to a sleep state is made. The PMU stops provision of a clock from the CPU by controlling the clock unit for stopping provision of all clocks by controlling the clock unit and for controlling the main regulator to be powered off when the restoration processor, wherein the PMU requests the restoration processor to store the registration information, completes the register information storing, when the transition from the sleep state to the active state is made.
摘要:
In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.