LIQUID CRYSTAL DISPLAY AND INVERSION DRIVING METHOD
    2.
    发明申请
    LIQUID CRYSTAL DISPLAY AND INVERSION DRIVING METHOD 审中-公开
    液晶显示和反相驱动方法

    公开(公告)号:US20120127142A1

    公开(公告)日:2012-05-24

    申请号:US13212943

    申请日:2011-08-18

    IPC分类号: G09G3/36 G06F3/038

    摘要: A liquid crystal display (LCD) ensuring excellent display quality and reducing power consumption is disclosed. The liquid crystal display (LCD) includes first and second polarity image display pixels, such that a polarity inversion of data is executed by line, column, and dot, and the polarity inversion of a common voltage is executed by frame. An inversion driving method using the liquid crystal display (LCD) is also disclosed.

    摘要翻译: 公开了一种确保优异的显示质量和降低功耗的液晶显示器(LCD)。 液晶显示器(LCD)包括第一和第二极性图像显示像素,使得通过线,列和点执行数据的极性反转,并且通过帧执行公共电压的极性反转。 还公开了使用液晶显示器(LCD)的反转驱动方法。

    Antenna having linear array antenna unit
    5.
    发明授权
    Antenna having linear array antenna unit 有权
    天线具有线性阵列天线单元

    公开(公告)号:US09142875B2

    公开(公告)日:2015-09-22

    申请号:US13325110

    申请日:2011-12-14

    申请人: Sung-Min Kim

    发明人: Sung-Min Kim

    CPC分类号: H01Q1/241 H01Q3/24 H01Q9/22

    摘要: An antenna may include a linear array antenna unit, a first switch, and a second switch. The linear array antenna unit may be configured to include a plurality of cable elements linearly arranged and coupled to each other. The first switch may include one end coupled to a ground and another end coupled to at least one of the plurality of cable elements of the linear array antenna unit. The second switch may include one end coupled to a power feed point and another end coupled to at least one of the plurality of cable elements. The plurality of cable elements of the linear array antenna unit may form one of a first antenna structure and a second antenna structure according to the switching operations of the first and second switches.

    摘要翻译: 天线可以包括线性阵列天线单元,第一开关和第二开关。 线性阵列天线单元可以被配置为包括线性排列并彼此耦合的多个电缆元件。 第一开关可以包括耦合到地的一端和耦合到线性阵列天线单元的多个电缆元件中的至少一个的另一端。 第二开关可以包括耦合到馈电点的一端和耦合到多个电缆元件中的至少一个的另一端。 根据第一和第二开关的切换操作,线性阵列天线单元的多个电缆元件可以形成第一天线结构和第二天线结构中的一个。

    Method and apparatus for driving alternating-current motor
    6.
    发明授权
    Method and apparatus for driving alternating-current motor 有权
    用于驱动交流电动机的方法和装置

    公开(公告)号:US08963459B2

    公开(公告)日:2015-02-24

    申请号:US13483372

    申请日:2012-05-30

    CPC分类号: H02P6/183 H02P21/18 H02P21/24

    摘要: A method of driving an alternating-current (AC) motor while periodically obtaining a rotator angle of the AC motor. The method includes: (a) driving the AC motor by a dS-axis voltage, which is a voltage for an exciting current in a stationary reference frame, and a qS-axis voltage, which is a voltage for generating a rotational force in the stationary reference frame, while sequentially applying different dS-axis voltages and different qS-axis voltages to the AC motor in a control injection period; and (b) obtaining a rotator angle by a dS-axis voltage value, a qS-axis voltage value, a dS-axis current value, and a qS-axis current value in the control injection period.

    摘要翻译: 一种在周期性地获得交流电动机的转子角度的同时驱动交流(AC)电动机的方法。 该方法包括:(a)通过dS轴电压驱动AC电动机,dS轴电压是静止参考系中的励磁电流的电压,qS轴电压是产生旋转力的电压 在控制喷射期间顺序地将不同的dS轴电压和不同的qS轴电压施加到AC电动机; 和(b)在控制喷射期间通过dS轴电压值,qS轴电压值,dS轴电流值和qS轴电流值获得转子角度。

    METHODS OF FORMING SEMICONDUCTOR DEVICES USING HARD MASK LAYERS
    8.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR DEVICES USING HARD MASK LAYERS 有权
    使用硬掩模层形成半导体器件的方法

    公开(公告)号:US20140264572A1

    公开(公告)日:2014-09-18

    申请号:US14165970

    申请日:2014-01-28

    摘要: A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.

    摘要翻译: 形成半导体结构的方法可以包括在其上具有在第一方向上延伸的硬掩模层的硅片上形成光刻掩模。 可以使用光刻掩模通过硬掩模层将沟槽形成为硅片,其中沟槽沿第二方向延伸,以将硅片分离成在第一方向上端对端延伸的第一和第二鳍结构。 由硬掩模层形成的沟槽的一部分可以相对于由第一和第二鳍结构限定的沟槽的下部加宽。

    Apparatus and method for reducing power consumption in system on chip
    9.
    发明授权
    Apparatus and method for reducing power consumption in system on chip 有权
    降低系统芯片功耗的装置和方法

    公开(公告)号:US08667313B2

    公开(公告)日:2014-03-04

    申请号:US12733599

    申请日:2008-09-10

    申请人: Sung-Min Kim

    发明人: Sung-Min Kim

    IPC分类号: G06F1/32

    CPC分类号: G06F1/3203

    摘要: An apparatus and method for reducing power consumption in a System on Chip (SoC) are provided. The SoC includes a clock unit for providing clocks to all elements included in the SoC, a Central Processing Unit (CPU) for controlling the SoC to perform designated functions, a main regulator for supplying power provided from an external battery to remaining elements included in the SoC other than a PMU, and a restoration processor for storing, in the PMU, registration information on the CPU and all peripherals included in the SoC when a transition from an active state to a sleep state is made. The PMU stops provision of a clock from the CPU by controlling the clock unit for stopping provision of all clocks by controlling the clock unit and for controlling the main regulator to be powered off when the restoration processor, wherein the PMU requests the restoration processor to store the registration information, completes the register information storing, when the transition from the sleep state to the active state is made.

    摘要翻译: 提供了一种用于降低片上系统(SoC)功耗的设备和方法。 SoC包括一个时钟单元,用于向包括在SoC中的所有元件提供时钟,一个用于控制SoC执行指定功能的中央处理单元(CPU),一个用于从外部电池提供的电力供给包含在其中的剩余元件的主调节器 除了PMU之外的SoC以及恢复处理器,用于在进行从活动状态到休眠状态的转换时,在PMU中存储关于CPU和包括在SoC中的所有外围设备的注册信息。 PMU通过控制时钟单元来停止从CPU提供时钟,通过控制时钟单元并且当恢复处理器控制主调节器断电时,其中PMU请求恢复处理器存储 当从休眠状态转换到活动状态时,注册信息完成寄存器信息存储。

    Semiconductor device including a crystal semiconductor layer
    10.
    发明授权
    Semiconductor device including a crystal semiconductor layer 有权
    包括晶体半导体层的半导体器件

    公开(公告)号:US08198704B2

    公开(公告)日:2012-06-12

    申请号:US12710378

    申请日:2010-02-23

    摘要: In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.

    摘要翻译: 在一个实施例中,制造具有晶体半导体层的半导体器件的方法包括制备半导体衬底并在半导体衬底上形成预活性图案。 预活性图案包括阻挡图案和非单晶半导体图案。 牺牲非单晶半导体层覆盖预活性图案和半导体衬底。 通过使牺牲非单晶半导体层和非单晶半导体图案结晶,使用半导体衬底作为晶种层,将牺牲非单晶半导体层和非单晶半导体图案改变为牺牲晶体 半导体层和晶体半导体图案。 晶体半导体图案和势垒图案构成活性图案。 去除牺牲晶体半导体层。