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公开(公告)号：US11031087B2
公开(公告)日：2021-06-08
申请号：US16865573
申请日：2020-05-04
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.
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公开(公告)号：US10942677B2
公开(公告)日：2021-03-09
申请号：US16257022
申请日：2019-01-24
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
Abstract: A method for performing access management of a memory device and associated apparatus (e.g. the memory device and controller thereof such as a memory controller within the memory device, an associated host device and an associated electronic device) are provided. The method may include: when the host device sends a host command to the memory device, utilizing the memory controller to estimate a completion time of the host command, to generate completion time information corresponding to the completion time; and utilizing the memory controller to send the completion time information to the host device, to allow the host device to perform polling after the completion time to obtain execution result of the host command.
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公开(公告)号：US10854285B2
公开(公告)日：2020-12-01
申请号：US16656533
申请日：2019-10-17
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
Abstract: A method for performing memory access includes: performing a first sensing operation corresponding to a first sensing voltage and performing at least a second sensing operation corresponding to a second sensing voltage to respectively generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value, the second digital value, and charge distribution statistics information of the Flash memory to obtain soft information of a bit stored in the Flash cell, wherein the soft information corresponds to a threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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公开(公告)号：US10824354B2
公开(公告)日：2020-11-03
申请号：US16686200
申请日：2019-11-17
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang , Chun-Chieh Kuo , Ching-Hui Lin , Yang-Chih Shen
Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.
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公开(公告)号：US20200264778A1
公开(公告)日：2020-08-20
申请号：US16278182
申请日：2019-02-18
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
IPC: G06F3/06
Abstract: A method for performing data-compression management in a storage server may include: receiving data from a host device; performing entropy detection on a plurality of sets of partial data to generate entropy detection values of the plurality of sets of partial data, respectively; classifying the plurality of sets of partial data according to the entropy detection values of the plurality of sets of partial data, respectively, to perform data compression on at least one portion of the plurality of sets of partial data through a plurality of data compression modules, respectively, wherein the plurality of data compression modules correspond to different compression capabilities, respectively; and storing the plurality of sets of partial data into at least one storage device of the storage server and recording address mapping information of the plurality of sets of partial data, respectively. An associated apparatus is also provided.
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Patent Agency Ranking
66.发明申请公开(公告)号：US20200242024A1
公开(公告)日：2020-07-30
申请号：US16683191
申请日：2019-11-13
Applicant: Silicon Motion, Inc.
Inventor： Jian-Dong Du , Chia-Jung Hsiao , Tsung-Chieh Yang
IPC: G06F12/02 , G06F12/0882 , G06F13/16 , G11C11/4099 , G11C11/4074 , G11C11/4093
Abstract: The present invention provides a flash memory controller, wherein the flash memory controller is arranged to access a flash memory module, and the flash memory controller includes a ROM, a microprocessor and a timer. The ROM stores a program code, the microprocessor is configured to execute the program code to control the access of the flash memory module, and the timer is used to generate time information. In the operations of the flash memory controller, the microprocessor refers to the time information to perform dummy read operations upon at least a portion of the blocks, wherein the dummy read operations are not triggered by read commands from a host device.
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公开(公告)号：US20200241795A1
公开(公告)日：2020-07-30
申请号：US16257022
申请日：2019-01-24
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
Abstract: A method for performing access management of a memory device and associated apparatus (e.g. the memory device and controller thereof such as a memory controller within the memory device, an associated host device and an associated electronic device) are provided. The method may include: when the host device sends a host command to the memory device, utilizing the memory controller to estimate a completion time of the host command, to generate completion time information corresponding to the completion time; and utilizing the memory controller to send the completion time information to the host device, to allow the host device to perform polling after the completion time to obtain execution result of the host command.
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公开(公告)号：US10521142B2
公开(公告)日：2019-12-31
申请号：US16260142
申请日：2019-01-29
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Chun-Chieh Kuo , Ching-Hui Lin , Yang-Chih Shen
Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.
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69.发明申请公开(公告)号：US20190341937A1
公开(公告)日：2019-11-07
申请号：US16516268
申请日：2019-07-19
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for decoding an error correction code and an associated decoding circuit are provided, where the method includes the steps of: calculating a set of error syndromes of the error correction code, where the error correction code is a t-error correcting code and has capability of correcting t errors, and a number s of the set of error syndromes is smaller than t; sequentially determining a set of coefficients within a plurality of coefficients of an error locator polynomial of the error correction code according to at least one portion of error syndromes within the set of error syndromes for building a roughly-estimated error locator polynomial; performing a Chien search to determine a plurality of roots of the roughly-estimated error locator polynomial; and performing at least one check operation to selectively utilize a correction result of the error correction code as a decoding result of the error correction code.
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70.发明申请公开(公告)号：US20190294499A1
公开(公告)日：2019-09-26
申请号：US16056555
申请日：2018-08-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a method for accessing a flash memory module, wherein the method comprises: receiving data and a corresponding metadata from a host device; performing a CRC operation upon the data to generate a CRC code; encoding the metadata and the CRC code to generate an adjusted parity code; encoding the data and the adjusted parity code to generate encoded data, wherein the encoded data comprises the data, the adjusted parity code and an error correction code corresponding to the data and the adjusted parity code; and writing the encoded data and the metadata to a page of a block of a flash memory module.
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