公开(公告)号：US20250160218A1

公开(公告)日：2025-05-15

申请号：US19017909

申请日：2025-01-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H10N52/00 ,  G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

公开(公告)号：US20250113740A1

公开(公告)日：2025-04-03

申请号：US18729008

申请日：2022-02-25

Applicant: TDK CORPORATION

Inventor： Takuya ASHIDA ,  Tomoyuki SASAKI

IPC: H10N50/10 ,  G11C11/16 ,  H10N50/85

Abstract: This magnetized rotary element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a topological insulator in which electrical conductors are dispersed.

公开(公告)号：US20250079676A1

公开(公告)日：2025-03-06

申请号：US17917738

申请日：2022-02-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yoshiaki SATO

IPC: H01P1/36 ,  H01P1/38

Abstract: An irreversible circuit element includes: a housing; a plurality of irreversible circuit plates accommodated in the housing; and a plurality of terminals connected to an outer surface of the housing, the plurality of irreversible circuit plates are arranged such that the adjacent irreversible circuit plates face each other, each of the plurality of irreversible circuit plates includes a metal layer, a first insulating layer, a loss layer, and a first magnetic field applying layer laminated in sequence in a thickness direction, each of the plurality of irreversible circuit plates transmits a signal irreversibly between a first end and a second end, and the first end and the second end of each of the plurality of irreversible circuit plates are connected to different terminals of the plurality of terminals.

公开(公告)号：US20250046502A1

公开(公告)日：2025-02-06

申请号：US18792078

申请日：2024-08-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01F10/32

Abstract: A spin transducer includes a first spin orbit torque wiring layer, a second spin orbit torque wiring layer, and a first spin wave propagation layer. The first spin wave propagation layer is between the first spin orbit torque wiring layer and the second spin orbit torque wiring layer. A current or voltage is applied between a first end and a second end of the first spin orbit torque wiring layer in a first direction, and a current or voltage between a third end and a fourth end of the second spin orbit torque wiring layer is output. The third end and the fourth end are at different positions on the second spin orbit torque wiring layer in a second direction perpendicular to the first direction.

公开(公告)号：US20230397505A1

公开(公告)日：2023-12-07

申请号：US18237014

申请日：2023-08-23

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N52/01 ,  H10N52/00 ,  H10N50/85

Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.

公开(公告)号：US20230247916A1

公开(公告)日：2023-08-03

申请号：US17912556

申请日：2021-07-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H10N52/80 ,  H01F10/32 ,  H10B61/00 ,  H10N52/85

CPC classification number: H10N52/80 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00 ,  H10N52/85

Abstract: A magnetic element according to the present embodiment includes a wiring layer, and a first ferromagnetic layer in contact with the wiring layer, in which the wiring layer includes a crystalline first layer, and an amorphous second layer which is between the first ferromagnetic layer and the first layer.

公开(公告)号：US20230189663A1

公开(公告)日：2023-06-15

申请号：US18103818

申请日：2023-01-31

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H10N52/80 ,  G11C11/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/16

CPC classification number: H10N52/80 ,  G11C11/18 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element, a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

公开(公告)号：US20230068442A1

公开(公告)日：2023-03-02

申请号：US17851858

申请日：2022-06-28

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L27/22

Abstract: A magneto resistive element includes a laminate that includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer; a first conductive layer that is connected to a first surface of the laminate in a lamination direction; and a second conductive layer that is connected to a second surface opposite the first surface. The first surface of the laminate includes a first region which comes into contact with the first conductive layer and a second region which does not come into contact with the first conductive layer.

公开(公告)号：US20220406993A1

公开(公告)日：2022-12-22

申请号：US16981310

申请日：2020-01-24

Applicant: TDK CORPORATION

Inventor： Kosuke HAMANAKA ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

公开(公告)号：US20220231221A1

公开(公告)日：2022-07-21

申请号：US17715477

申请日：2022-04-07

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L43/08 ,  H03B15/00 ,  G11B5/39 ,  H01L29/82 ,  H01L27/105 ,  H01F10/32 ,  G11C11/18 ,  G11C11/16 ,  H01L43/04 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.