摘要:
Each detection column wiring is constituted by a set of a first metal wiring having a zigzag pattern and a second metal wiring having a structure axisymmetric with the first metal wiring about a column direction as an axis, wherein the first metal wiring is constituted by first sloped portions which are obliquely sloped by an inclination angle of 45 degrees with respect to the column direction, and first parallel portions which are parallel with the column direction and are continuous with the first sloped portions, such that the first sloped portions and the first parallel portions are repeatedly placed in a zigzag shape along the column direction. Each detection row wiring also has the same structure. A sloped portion out of the first sloped portions of the first metal wiring is always orthogonally and spatially intersected, at its middle point, with a sloped portion out of the second sloped portions of the third metal wiring at its middle point. There is also the same orthogonal relationship among the other portions.
摘要:
An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要:
On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要:
In first and second gate electrodes constituting a gate electrode, the gate length of the second gate electrode is set shorter than the gate length of the first gate electrode and short enough to produce the short channel effect. The threshold voltage of a second transistor corresponding to the second gate electrode can thereby be made lower than the threshold voltage of a first transistor corresponding to the first gate electrode. When the same voltage is applied to the first and second gate electrodes, an electric field concentration at the channel edge on the drain side is reduced. This in result reduces the channel length modulation effect.
摘要:
Provided is an outer joint member for a constant velocity universal joint, which can be manufactured at low cost. The outer joint member includes a cup member (13) having a tubular body portion (1) and a bottom portion (12) for closing one opening of the body portion (1), and also includes a disc-like flange member (2) mounted on the bottom portion (12) of the cup member (13). A protrusion (8) is provided on the bottom portion (12), the flange member (2) is fitted on the protrusion (8), and an inside surface (4a) of the flange member (2) and an outer diameter surface (3) of the protrusion are bonded together by welding. In the welding, molten metal flows into a relief portion (9) provided in a fitting portion between the cup member (13) and the flange member (2), and this prevents the weld bead from raising, thereby reducing costs otherwise necessary to eliminate the raised bead.
摘要:
A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion.
摘要:
A double-row self-aligning roller bearing includes left and right rows of rollers 4 and 5, arranged between an inner race 2 and an outer race 3. A raceway surface 3a of the outer race 3 represents a spherical shape and the rollers 4 and 5 have an outer peripheral surface following the shape of the raceway surface 3a of the outer race 3. The rollers 4 and 5 of the left and right roller rows have respective lengths L1 and L2 different from each other. Also, the left and right roller rows have respective contact angles θ1 and θ2 different from each other.
摘要:
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.
摘要:
A liquid crystal display according to the present invention includes: a liquid crystal cell 10, in which pixels having independently driven reflecting and transmitting members are arranged in a matrix, that is composed of a first substrate 15, a second substrate 17 having pixel driving members, and a liquid crystal 16 sandwiched between the first substrate 15 and the second substrate 17; a first polarizing means 13 disposed facing the first substrate 15; a second polarizing means 19 disposed facing the second substrate 17; a first front light 6 disposed outside the first polarizing means 13; and a second front light 7 disposed outside the second polarizing means 19. Owing to the configuration of the display, images can be displayed on both sides of the liquid crystal display.