Touch screen, touch panel and display device
    61.
    发明授权
    Touch screen, touch panel and display device 有权
    触摸屏,触摸屏和显示设备

    公开(公告)号:US08269744B2

    公开(公告)日:2012-09-18

    申请号:US12553659

    申请日:2009-09-03

    IPC分类号: G06F3/044

    CPC分类号: G06F3/044 G06F2203/04112

    摘要: Each detection column wiring is constituted by a set of a first metal wiring having a zigzag pattern and a second metal wiring having a structure axisymmetric with the first metal wiring about a column direction as an axis, wherein the first metal wiring is constituted by first sloped portions which are obliquely sloped by an inclination angle of 45 degrees with respect to the column direction, and first parallel portions which are parallel with the column direction and are continuous with the first sloped portions, such that the first sloped portions and the first parallel portions are repeatedly placed in a zigzag shape along the column direction. Each detection row wiring also has the same structure. A sloped portion out of the first sloped portions of the first metal wiring is always orthogonally and spatially intersected, at its middle point, with a sloped portion out of the second sloped portions of the third metal wiring at its middle point. There is also the same orthogonal relationship among the other portions.

    摘要翻译: 每个检测列布线由一组具有锯齿形图案的第一金属布线和第二金属布线构成,第一金属布线具有围绕列方向作为轴线的与第一金属布线轴对称的结构,其中第一金属布线由第一倾斜 相对于列方向倾斜倾斜45度的部分和与列方向平行且与第一倾斜部连续的第一平行部,使得第一倾斜部和第一平行部 沿着列方向被重复地设置成Z字形。 每个检测行布线也具有相同的结构。 在第一金属布线的第一倾斜部分之间的倾斜部分总是在其中间点处与第三金属布线的中间点处的第二倾斜部分的倾斜部分正交和空间相交。 其他部分之间也具有相同的正交关系。

    Method of manufacturing semiconductor thin film
    63.
    发明授权
    Method of manufacturing semiconductor thin film 有权
    制造半导体薄膜的方法

    公开(公告)号:US08080450B2

    公开(公告)日:2011-12-20

    申请号:US12596453

    申请日:2007-12-05

    摘要: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

    摘要翻译: 在半透明基板上,依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜,从非晶硅膜的与绝缘膜相对的侧面多次, 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离,由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界,并且以沿长度方向测量的平均间隔设置,范围为(λ/ n)×0.95〜(λ/ n)×1.05, 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中,在长度方向上延伸并沿宽度方向测量的平均间隔设置在(λ/ n)×0.95〜( λ/ n)×1.05(含)。

    Thin film transistor
    64.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号:US07791073B2

    公开(公告)日:2010-09-07

    申请号:US11734390

    申请日:2007-04-12

    IPC分类号: H01L31/20

    CPC分类号: H01L27/1214 H01L29/78645

    摘要: In first and second gate electrodes constituting a gate electrode, the gate length of the second gate electrode is set shorter than the gate length of the first gate electrode and short enough to produce the short channel effect. The threshold voltage of a second transistor corresponding to the second gate electrode can thereby be made lower than the threshold voltage of a first transistor corresponding to the first gate electrode. When the same voltage is applied to the first and second gate electrodes, an electric field concentration at the channel edge on the drain side is reduced. This in result reduces the channel length modulation effect.

    摘要翻译: 在构成栅电极的第一和第二栅电极中,第二栅电极的栅极长度被设定为短于第一栅电极的栅极长度,并且足够短以产生短沟道效应。 可以使与第二栅电极对应的第二晶体管的阈值电压低于与第一栅电极对应的第一晶体管的阈值电压。 当对第一和第二栅极施加相同的电压时,漏极侧的沟道边缘处的电场浓度降低。 这在结果中减少了通道长度调制效应。

    OUTER JOINT MEMBER FOR CONSTANT VELOCITY UNIVERSAL JOINT
    65.
    发明申请
    OUTER JOINT MEMBER FOR CONSTANT VELOCITY UNIVERSAL JOINT 审中-公开
    外部联盟会员持续快速通用联合

    公开(公告)号:US20100119300A1

    公开(公告)日:2010-05-13

    申请号:US12530495

    申请日:2008-03-07

    IPC分类号: F16B11/00

    摘要: Provided is an outer joint member for a constant velocity universal joint, which can be manufactured at low cost. The outer joint member includes a cup member (13) having a tubular body portion (1) and a bottom portion (12) for closing one opening of the body portion (1), and also includes a disc-like flange member (2) mounted on the bottom portion (12) of the cup member (13). A protrusion (8) is provided on the bottom portion (12), the flange member (2) is fitted on the protrusion (8), and an inside surface (4a) of the flange member (2) and an outer diameter surface (3) of the protrusion are bonded together by welding. In the welding, molten metal flows into a relief portion (9) provided in a fitting portion between the cup member (13) and the flange member (2), and this prevents the weld bead from raising, thereby reducing costs otherwise necessary to eliminate the raised bead.

    摘要翻译: 本发明提供一种能够以低成本制造的等速万向接头的外接头构件。 外部接头构件包括具有管状主体部分(1)的杯形构件(13)和用于封闭主体部分(1)的一个开口的底部部分(12),并且还包括盘状凸缘构件(2) 安装在杯构件(13)的底部部分(12)上。 在底部(12)上设有突起(8),凸缘(2)装配在突起(8)上,凸缘部件(2)的内表面(4a)和外径表面 3)通过焊接结合在一起。 在焊接中,熔融金属流入设置在杯构件(13)和凸缘构件(2)之间的装配部分的释放部分(9)中,这防止了焊道隆起,从而降低了消除其他必要的成本 凸起的珠子。

    THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE
    67.
    发明申请
    THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE 有权
    薄膜晶体管,使用其的显示装置和制造薄膜晶体管和显示装置的方法

    公开(公告)号:US20080224147A1

    公开(公告)日:2008-09-18

    申请号:US12026794

    申请日:2008-02-06

    IPC分类号: H01L33/00 H01L21/336

    摘要: A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion.

    摘要翻译: 薄膜晶体管包括栅电极,形成为覆盖栅电极的栅绝缘膜,包括形成在栅电极上的沟道区的半导体层,源电极和漏电极,其包括连接到半导体层的区域,其中 所述区域的至少一部分与所述栅电极重叠,形成为覆盖所述半导体层,所述源电极和漏电极的上绝缘膜,所述上绝缘膜与所述半导体层的沟道区域直接接触 并通过热处理进行水分排出和形成为覆盖第一保护膜的第二上部绝缘膜,并抑制水分向外扩散。

    Semiconductor device and image display apparatus
    69.
    发明申请
    Semiconductor device and image display apparatus 有权
    半导体装置和图像显示装置

    公开(公告)号:US20060214229A1

    公开(公告)日:2006-09-28

    申请号:US11376414

    申请日:2006-03-16

    IPC分类号: H01L27/12

    摘要: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.

    摘要翻译: 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管,其包括源极区,漏极区,具有预定沟道长度的沟道区,LDD区和杂质浓度高于沟道区的杂质浓度的GOLD区, 比源极和漏极区域的杂质浓度,栅极绝缘膜和栅极电极。 栅电极形成为与沟道区域和GOLD区域平面重叠。 因此,获得了旨在提高源极 - 漏极击穿电压的半导体器件和图像显示装置。