公开(公告)号：US20100112790A1

公开(公告)日：2010-05-06

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/20 ,  H01L21/268

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US08080450B2

公开(公告)日：2011-12-20

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US20080135909A1

公开(公告)日：2008-06-12

申请号：US11948377

申请日：2007-11-30

申请人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

发明人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

IPC分类号： H01L27/108 ,  H01L21/02

CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1255 ,  H01L27/1288

摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

摘要翻译： 在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。 在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。 在本发明的显示装置中，金属导电膜5层叠在用作保持电容器130的下电极的多晶半导体膜的半导体层4d的上方。

公开(公告)号：US07754541B2

公开(公告)日：2010-07-13

申请号：US11948377

申请日：2007-11-30

申请人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

发明人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

IPC分类号： H01L21/00

CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1255 ,  H01L27/1288

摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

摘要翻译： 在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。 在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。 在本发明的显示装置中，金属导电膜5堆叠在用作存储电容器130的下电极的多晶半导体膜制成的半导体层4d的上方。

公开(公告)号：US08384086B2

公开(公告)日：2013-02-26

申请号：US12888779

申请日：2010-09-23

申请人： Kazushi Yamayoshi ,  Toru Takeguchi ,  Kazutoshi Aoki

发明人： Kazushi Yamayoshi ,  Toru Takeguchi ,  Kazutoshi Aoki

IPC分类号： H01L27/108

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765

摘要： A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

摘要翻译： 一种使非晶半导体膜结晶的方法，所述方法包括以下步骤：在透明绝缘基板上形成栅电极; 在透明绝缘基板上和栅电极的上部形成栅极绝缘膜; 在栅极绝缘膜上形成非晶半导体膜; 在所述非晶半导体膜上形成透光绝缘膜; 在所述透光绝缘膜上形成具有开口的金属膜; 将激光照射到由开口曝光的透光绝缘膜的区域和用作屏蔽激光的掩模的金属膜; 并且进行激光退火以使激光通过透光绝缘膜吸收到由开口暴露的非晶半导体膜的区域中，使得非晶半导体膜被加热并转换成结晶半导体膜。

公开(公告)号：US20110079780A1

公开(公告)日：2011-04-07

申请号：US12888779

申请日：2010-09-23

申请人： Kazushi YAMAYOSHI ,  Toru Takeguchi ,  Kazutoshi Aoki

发明人： Kazushi YAMAYOSHI ,  Toru Takeguchi ,  Kazutoshi Aoki

IPC分类号： H01L21/268 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765

摘要： A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

摘要翻译： 一种使非晶半导体膜结晶的方法，所述方法包括以下步骤：在透明绝缘基板上形成栅电极; 在透明绝缘基板上和栅电极的上部形成栅极绝缘膜; 在栅极绝缘膜上形成非晶半导体膜; 在所述非晶半导体膜上形成透光绝缘膜; 在所述透光绝缘膜上形成具有开口的金属膜; 将激光照射到由开口曝光的透光绝缘膜的区域和用作屏蔽激光的掩模的金属膜; 并且进行激光退火以使激光通过透光绝缘膜吸收到由开口暴露的非晶半导体膜的区域中，使得非晶半导体膜被加热并转换成结晶半导体膜。

公开(公告)号：US07732815B2

公开(公告)日：2010-06-08

申请号：US11836312

申请日：2007-08-09

申请人： Toru Takeguchi ,  Shinsuke Yura

发明人： Toru Takeguchi ,  Shinsuke Yura

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/112

CPC分类号： H01L21/02675 ,  B23K26/064 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/40 ,  B23K2101/42 ,  B23K2103/50 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.

摘要翻译： 根据本发明实施例的半导体薄膜包括：通过向非晶半导体薄膜施加激光而形成的多晶半导体薄膜; 以及排列成尺寸为激光的振荡波长的约1/2的晶格形状的晶粒。

公开(公告)号：US07642605B2

公开(公告)日：2010-01-05

申请号：US11054384

申请日：2005-02-10

申请人： Toru Takeguchi ,  Kazuyuki Sugahara

发明人： Toru Takeguchi ,  Kazuyuki Sugahara

IPC分类号： H01L23/62

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

摘要翻译： 半导体器件包括具有主表面的玻璃衬底，形成在主表面上的多晶硅膜，具有形成的沟道区，并且具有形成在沟道区的相对侧上的源极区和漏极区，栅极绝缘膜设置为 与多晶硅膜接触并含有氧，以及设置在与栅极绝缘膜相对的沟道区的位置的栅电极。 多晶硅膜的厚度大于50nm且不大于150nm。 多晶硅膜含有不小于0.5原子％且不大于10原子％的比例的氢。 通过这样的结构，提供了获得大的漏极电流并具有期望的电特性的半导体器件。

公开(公告)号：US20050173763A1

公开(公告)日：2005-08-11

申请号：US11054384

申请日：2005-02-10

申请人： Toru Takeguchi ,  Kazuyuki Sugahara

发明人： Toru Takeguchi ,  Kazuyuki Sugahara

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

摘要翻译： 半导体器件包括具有主表面的玻璃衬底，形成在主表面上的多晶硅膜，具有形成的沟道区，并且具有形成在沟道区的相对侧上的源极区和漏极区，栅极绝缘膜设置为 与多晶硅膜接触并含有氧，以及设置在与栅极绝缘膜相对的沟道区的位置的栅电极。 多晶硅膜的厚度大于50nm且不大于150nm。 多晶硅膜含有不小于0.5原子％且不大于10原子％的比例的氢。 通过这样的结构，提供了获得大的漏极电流并具有期望的电特性的半导体器件。

公开(公告)号：US20120112194A1

公开(公告)日：2012-05-10

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L33/08

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。