公开(公告)号：US08314006B2

公开(公告)日：2012-11-20

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US20120126362A1

公开(公告)日：2012-05-24

申请号：US13320663

申请日：2010-05-25

申请人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Atsuo Ito ,  Yuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/268

摘要： A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.

摘要翻译： 通过以下步骤获得在蓝宝石衬底的表面上或上方具有半导体膜的结合SOS衬底：从半导体衬底的表面注入离子以形成离子注入层的步骤; 至少活化离子已被植入的表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材以形成粘合体; 以及将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到所述半导体衬底的离子注入层，以使所述离子注入层的界面脆化，同时将所述接合体保持在高于 键合半导体衬底和蓝宝石衬底的表面。

公开(公告)号：US08088670B2

公开(公告)日：2012-01-03

申请号：US12081297

申请日：2008-04-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/304 ,  H01L21/30 ,  H01L27/12 ,  H01L21/18

CPC分类号： H01L21/76254 ,  H01L21/3046 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68359

摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.

摘要翻译： 当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于 绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。 提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于 绝缘体基板的背面。

公开(公告)号：US20110244654A1

公开(公告)日：2011-10-06

申请号：US13115441

申请日：2011-05-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

摘要翻译： 氮化物类半导体晶体和第二基板结合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到 第二基板。 此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。 将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分 密度区域残留被重新用作外延生长的衬底。

公开(公告)号：US08030176B2

公开(公告)日：2011-10-04

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/46

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US07972937B2

公开(公告)日：2011-07-05

申请号：US12230984

申请日：2008-09-09

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/322

CPC分类号： H01L21/76254

摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.

摘要翻译： 本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。 以下述方式实现本发明的实施例。 通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底 （SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层） 的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

公开(公告)号：US07892934B2

公开(公告)日：2011-02-22

申请号：US12158047

申请日：2006-11-01

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/76254

摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

摘要翻译： 在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。 单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。 在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜 单晶Si衬底表面附近。

公开(公告)号：US20110003462A1

公开(公告)日：2011-01-06

申请号：US12920363

申请日：2009-03-23

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/306

CPC分类号： H01L21/76254 ,  H01L21/30608

摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 在浸渍的剥离后的SOI晶片上，在900℃以上的温度下进行热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

公开(公告)号：US07855127B2

公开(公告)日：2010-12-21

申请号：US12010711

申请日：2008-01-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for manufacturing a semiconductor substrate including: epitaxially growing a silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition method; subjecting a heat treatment to the SiGe film at a temperature of not less than 700° C. and not more than 1200° C.; implanting hydrogen ions into a surface of the SiGe film; subjecting a surface activation treatment to a main surface of at least one of the SiGe film and a support substrate; bonding main surfaces of the SiGe film and the support substrate at a temperature of not less than 100° C. and not more than 400° C.; and applying an external impact to a bonding interface between the SiGe film and the support substrate to delaminate the SiGe crystal along a hydrogen ion implanted interface of the SiGe film, thereby forming a SiGe thin film on the main surface of the support substrate.

摘要翻译： 一种制造半导体衬底的方法，包括：通过化学气相沉积法在硅（Si）衬底上外延生长硅锗（SiGe）膜; 在不低于700℃且不超过1200℃的温度下对SiGe膜进行热处理; 将氢离子注入SiGe膜的表面; 对SiGe膜和支撑基板中的至少一个的主表面进行表面活化处理; 在不低于100℃且不超过400℃的温度下接合SiGe膜和支撑衬底的主表面; 并对SiGe膜和支撑基板之间的接合界面施加外部冲击，以沿着SiGe膜的氢离子注入界面分解SiGe晶体，从而在支撑基板的主表面上形成SiGe薄膜。

公开(公告)号：US20090111237A1

公开(公告)日：2009-04-30

申请号：US12285409

申请日：2008-10-03

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/28167 ,  H01L21/3144 ,  H01L21/32105 ,  H01L29/4908 ,  H01L29/78603

摘要： A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.

摘要翻译： 实现SOI衬底制造工艺中温度的一致降低。 通过层叠在450℃以下的温度下生长的低温热氧化膜13和基于CVD法得到的氧化膜14，可以得到设置在SOI衬底上的栅极氧化膜。 由于热氧化膜13是100以下的薄膜，所以450℃以下的低温就可以了。 下面的热氧化膜13可以抑制结构缺陷，例如界面状态，并且可以使用形成在热氧化膜上的CVD氧化膜14来调节栅极氧化膜的厚度。 根据这种技术，可以使用常规的一般的氧化硅膜形成装置在低温下形成栅极氧化膜，从而在SOI衬底制造工艺中实现一致的温度降低。