公开(公告)号：US20130327955A1

公开(公告)日：2013-12-12

申请号：US13686633

申请日：2012-11-27

申请人： Erik Roelof Loopstra ,  Gerardus Hubertus Petrus Maria Swinkels ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors

发明人： Erik Roelof Loopstra ,  Gerardus Hubertus Petrus Maria Swinkels ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors

IPC分类号： H05G2/00

CPC分类号： H05G2/006 ,  G03F7/70033 ,  G03F7/70891 ,  G03F7/70916 ,  G21K1/06 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

摘要： A radiation source is configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which, in use, a plasma is generated, and an evaporation surface configured to evaporate a material formed as a by-product from the plasma and that is emitted to the evaporation surface. A method for removing a by-product material in or from a plasma radiation source of a lithographic apparatus includes evaporating a material which, in use, is emitted to that surface from the plasma.

摘要翻译： 辐射源被配置为产生极紫外辐射。 辐射源包括在其中使用中产生等离子体的腔室，以及蒸发表面，该蒸发表面构造成蒸发由等离子体形成的副产物并被发射到蒸发表面的材料。 用于在平版印刷设备的等离子体辐射源中除去或来自等离子体辐射源的副产物材料的方法包括在等离子体中蒸发在使用中发射到该表面的材料。

公开(公告)号：US08405055B2

公开(公告)日：2013-03-26

申请号：US12566060

申请日：2009-09-24

申请人： Dzmitry Labetski ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Johannes Hubertus Josephina Moors ,  Gerardus Hubertus Petrus Maria Swinkels

发明人： Dzmitry Labetski ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Johannes Hubertus Josephina Moors ,  Gerardus Hubertus Petrus Maria Swinkels

IPC分类号： H05H1/42

CPC分类号： H05G2/001 ,  H05G2/003

摘要： A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a fuel supply configured to supply a fuel to a plasma formation site; a laser configured to emit a beam of radiation to the plasma formation site so that a plasma that emits extreme ultraviolet radiation is generated when the beam of radiation impacts the fuel; a fuel particulate interceptor constructed and arranged to shield at least part of the radiation source from fuel particulates that are emitted by the plasma, the fuel particulate interceptor comprising a first portion and a second portion, the second portion being positioned closer to the plasma formation site than the first portion, and the first portion being rotatable; and a fuel particulate remover constructed and arranged to remove fuel particulates from a surface of the fuel particulate interceptor and to direct the fuel particulates towards a collection location.

摘要翻译： 辐射源被配置成产生极紫外辐射。 辐射源包括构造成将燃料供应到等离子体形成位置的燃料供应; 激光器被配置为向等离子体形成位置发射辐射束，使得当辐射束影响燃料时产生发射极紫外辐射的等离子体; 燃料颗粒拦截器，其被构造和布置成将辐射源的至少一部分屏蔽在由等离子体发射的燃料颗粒中，所述燃料颗粒拦截器包括第一部分和第二部分，所述第二部分位于更靠近等离子体形成位置 并且所述第一部分可旋转; 以及构造和布置成从燃料颗粒拦截器的表面去除燃料颗粒并将燃料颗粒引导到收集位置的燃料颗粒去除器。

公开(公告)号：US07935218B2

公开(公告)日：2011-05-03

申请号：US11643955

申请日：2006-12-22

申请人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

发明人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

IPC分类号： C23F1/00

CPC分类号： G03F7/2043 ,  G03F7/70041 ,  G03F7/70925

摘要： An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second type of gas to a space adjacent the surface. Particles of the first and second types of gas are capable of reacting with the surface, when activated by the radiation beam. The gas source is configured to generate a combination of surface occupation numbers of molecules of the first and second types of gas on the surface under operating conditions, at least prior to pulses of the radiation beam, the combination of surface occupation numbers lying in a range in which reactions of particles with the surface during pulses of the radiation beam are in majority reversed.

摘要翻译： 光学装置包括被配置为形成脉冲辐射束的照明系统，具有辐射束在其中入射的表面的光学元件，以及设置成供应第一类型气体和第二类型的混合物的气体源 的气体到邻近表面的空间。 当由辐射束激活时，第一和第二类气体的颗粒能够与表面反应。 气源被配置成至少在辐射束的脉冲之前，在工作条件下，在表面上产生第一和第二类气体的分子的表面占有数量的组合，表面占有数的组合在一个范围内 其中在辐射束的脉冲期间颗粒与表面的反应多数反转。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US20080259298A1

公开(公告)日：2008-10-23

申请号：US11785745

申请日：2007-04-19

申请人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

发明人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

IPC分类号： G03B27/42

CPC分类号： G03F7/70291 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70191

摘要： A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system.

摘要翻译： 用于无掩模EUV应用的光刻设备包括被构造和布置成调节辐射束并且将经调节的辐射束提供给空间光调制器的照明系统，被构造和布置成保持衬底的衬底台，以及构造和布置的投影系统 以将调节的辐射束投影到基板的目标部分上。 照明系统包括构造和布置成限定经调节的辐射束的场的场面反射镜。 场面反射镜被构造和布置成光学匹配辐射源和照明系统。

公开(公告)号：US20080266654A1

公开(公告)日：2008-10-30

申请号：US11790681

申请日：2007-04-26

申请人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Frank Jeroen Pieter Schuurmans ,  Vladimir Mihailovitch Krivtsun ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Frank Jeroen Pieter Schuurmans ,  Vladimir Mihailovitch Krivtsun ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G02B21/00

CPC分类号： G21K7/00

摘要： An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm.

摘要翻译： 配置用于分析样品的极紫外（EUV）显微镜。 显微镜包括EUV辐射源，其被构造和布置成产生具有至少在约2-6nm范围内的波长的EUV辐射，以及构造和布置成用EUV辐射照射样品并收集一个 样品发出的辐射。 光学系统布置有至少一个反射镜，该反射镜包括多层结构，用于至少部分辐射在约2-6nm范围内的同相反射。

公开(公告)号：US07030963B2

公开(公告)日：2006-04-18

申请号：US10836613

申请日：2004-05-03

申请人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Jeroen Jonkers ,  Erik Roelof Loopstra

发明人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Jeroen Jonkers ,  Erik Roelof Loopstra

IPC分类号： G03B27/42

CPC分类号： G03F7/70008 ,  G03F7/7005

摘要： A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

摘要翻译： 光刻设备包括被配置为提供辐射束的照明系统，被配置为支撑图案形成装置的支撑件，衬底台和投影系统。 此外，光刻设备包括用于向照明系统提供EUV辐射的多个EUV源和布置成将来自每个EUV源的EUV辐射转换成中间辐射束的分配器。 辐射的中间束通过镜面从第一方向从分配器引导。 分配器可以包括旋转驱动的反射镜布置，旋转轴线不平行于镜面。

公开(公告)号：US07706057B2

公开(公告)日：2010-04-27

申请号：US12230384

申请日：2008-08-28

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： F21V9/04 ,  F21V9/06 ,  G02B5/08 ,  G02B5/20

CPC分类号： G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.

摘要翻译： 多层反射镜包括多层堆叠。 多层堆叠包括多层交叠层，多层叠层顶层和布置在多层堆叠上的光谱过滤器顶层。 光谱过滤器顶层包括第一光谱纯度增强层，其包括第一材料m1并且具有第一层厚度d1，包括第二材料m2并具有第二层厚度d2的中间层。 中间层布置在多层堆叠顶层上。 第一种材料选自SiN，Si3N4，SiO2，ZnS，Te，金刚石，CsI，Se，SiC，无定形碳，MgF2，CaF2，TiO2，Ge，PbF2，ZrO2，BaTiO3，LiF或NaF。 第二材料包括与第一材料不同的材料，并且d1 + d2具有在1.5和40nm之间的厚度。

公开(公告)号：US07170586B2

公开(公告)日：2007-01-30

申请号：US11335681

申请日：2006-01-20

申请人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Jeroen Jonkers ,  Erik Roelof Loopstra

发明人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Jeroen Jonkers ,  Erik Roelof Loopstra

IPC分类号： G03B24/54

CPC分类号： G03F7/70008 ,  G03F7/7005

摘要： A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

摘要翻译： 光刻设备包括被配置为提供辐射束的照明系统，被配置为支撑图案形成装置的支撑件，衬底台和投影系统。 此外，光刻设备包括用于向照明系统提供EUV辐射的多个EUV源和布置成将来自每个EUV源的EUV辐射转换成中间辐射束的分配器。 辐射的中间束通过镜面从第一方向从分配器引导。 分配器可以包括旋转驱动的反射镜布置，旋转轴线不平行于镜面。