公开(公告)号：US07170093B2

公开(公告)日：2007-01-30

申请号：US10982472

申请日：2004-11-05

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L29/04

CPC分类号： H01L23/5329 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

摘要翻译： 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层。

公开(公告)号：US07169883B2

公开(公告)日：2007-01-30

申请号：US10646196

申请日：2003-08-22

申请人： Yiliang Wu ,  Ping Liu ,  Lu Jiang ,  Beng S. Ong

发明人： Yiliang Wu ,  Ping Liu ,  Lu Jiang ,  Beng S. Ong

IPC分类号： C08G75/00

CPC分类号： C08G61/126 ,  C08G61/02 ,  C08G61/10

摘要： A thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene unit selected from (I) and (II), and from about one to about three arylene units selected from (IIIa), (IIIb), and/or (IIIc) wherein R is an alkyl or an alkoxy; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of Rs.

摘要翻译： 由含有至少一个选自（I）和（II）的2,5-亚噻吩基单元的重复链段和选自（IIIa），（IIIb）和（IIIb）中的约1至约3个亚芳基的亚噻吩基亚芳基聚合物 /或（IIIc）其中R是烷基或烷氧基; R'是卤素，烷基或烷氧基，a和b表示Rs的数目。

公开(公告)号：US06890868B2

公开(公告)日：2005-05-10

申请号：US10273896

申请日：2002-10-17

申请人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

发明人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

IPC分类号： B05D1/36 ,  C08J5/18 ,  H01L21/20 ,  H01L21/336 ,  H01L21/47 ,  H01L29/76 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0545 ,  C08G61/02 ,  C08G61/126 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0541

摘要： A process including: (a) selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; (b) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (c) lowering the temperature of the composition from the elevated temperature to the first lower temperature; (d) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature: (e) depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and (f) drying at least partially the layer.

摘要翻译： 一种方法，包括：（a）选择包含聚合物和液体的组合物，其中聚合物在室温下在液体中表现出较低的溶解度，但在升高的温度下在液体中表现出较高的溶解度，其中当升高的温度为 在不搅拌的情况下降至第一较低温度; （b）在升高的温度下将聚合物的至少一部分溶解在液体中; （c）将组合物的温度从升高的温度降低到第一较低温度; （d）搅拌组合物以破坏任何胶凝，其中搅拌在组合物的升高温度降低到第一较低温度之前，同时或之后的任何时间开始：（e）沉积组合物层 其中所述组合物处于低于升高的温度的第二较低温度; 和（f）至少部分干燥该层。

公开(公告)号：US06872801B2

公开(公告)日：2005-03-29

申请号：US10042360

申请日：2002-01-11

申请人： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

发明人： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

IPC分类号： C08G61/12 ,  H01B1/12 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  C08G75/00

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： A polythiophene wherein the monomer segments thereof contain: wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent segment, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent segments D is 0 or 1.

摘要翻译： 聚噻吩，其中单体链段含有：其中A是侧链; B是氢或侧链; D是二价段，单体链段中的A取代的亚噻吩基单元（I）的数量为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5， 并且二价段D的数目为0或1。

公开(公告)号：US08039833B2

公开(公告)日：2011-10-18

申请号：US12783595

申请日：2010-05-20

申请人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

发明人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

IPC分类号： H01L51/40

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

公开(公告)号：US07829625B2

公开(公告)日：2010-11-09

申请号：US12436975

申请日：2009-05-07

申请人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

发明人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

IPC分类号： C08L83/00 ,  C08K5/06

CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

公开(公告)号：US07705346B2

公开(公告)日：2010-04-27

申请号：US11145701

申请日：2005-06-06

申请人： Mihaela Maria Birau ,  Yu Qi ,  Yiliang Wu ,  Beng S. Ong

发明人： Mihaela Maria Birau ,  Yu Qi ,  Yiliang Wu ,  Beng S. Ong

IPC分类号： H01L51/05

CPC分类号： H01L51/0096 ,  H01L51/0512 ,  Y02E10/549

摘要： A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, oxygen and/or moisture is described. The barrier layer comprises a polymer, an antioxidant, and an inorganic particulate material.

摘要翻译： 描述了保护电子设备免受诸如暴露于光，氧和/或水分的不利环境影响的新颖的阻挡层。 阻挡层包括聚合物，抗氧化剂和无机颗粒材料。

公开(公告)号：US07632703B2

公开(公告)日：2009-12-15

申请号：US11315785

申请日：2005-12-22

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L21/00 ,  H01L21/469 ,  H01L35/24

CPC分类号： H01L51/002 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0545

摘要： Methods are disclosed for improving organic thin-film transistor (OTFT) performance by acid doping of the semiconducting layer. The semiconducting polymer comprising the semiconductor layer is doped with an acid, especially a Lewis acid, either during or after polymerization of the polymer, but prior to application of the polymer onto the OTFT. Also disclosed are OTFTs having enhanced charge carrier mobility produced by these methods.

摘要翻译： 公开了通过半导体层的酸掺杂改善有机薄膜晶体管（OTFT）性能的方法。 包含半导体层的半导体聚合物在聚合物聚合期间或之后，但在将聚合物施加到OTFT之前，用酸，特别是路易斯酸掺杂。 还公开了具有由这些方法产生的增​​强的电荷载流子迁移率的OTFT。

公开(公告)号：US07615607B2

公开(公告)日：2009-11-10

申请号：US11399230

申请日：2006-04-06

申请人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong

发明人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong

IPC分类号： C08G75/00

CPC分类号： C08G61/122 ,  C08G61/126

摘要： A polymer comprising those selected from the group consisting of at least one of Formula (I), Formula (II), or mixtures thereof wherein each R1 to R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.

摘要翻译： 包含选自式（I），式（II）或其混合物中的至少一种的那些的聚合物，其中每个R 1至R 10独立地为氢，烷基，芳基，烷氧基，卤素，芳基烷基，氰基或硝基 条件是R1和R2不包括卤素，硝基和氰基; a和b表示环数; 并且n表示重复基团或部分的数目。

公开(公告)号：US20080122881A1

公开(公告)日：2008-05-29

申请号：US11563989

申请日：2006-11-28

申请人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

发明人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

IPC分类号： B41J29/38 ,  G06K19/06

CPC分类号： B41J29/393 ,  G06K19/067 ,  Y10S283/901

摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.

摘要翻译： 公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。 可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。 可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。 还描述了用于形成和检测不同印刷标记的系统。