摘要:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要:
A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要:
An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line. Here, the scan timing generation unit and the switch unit, and the external output timing unit and the switch unit control the readout and the output of the pixel signals, respectively, so that a time period required for the readout of the pixel signals from the capacitance element to the signal line is longer than a time period required for the output of the pixel signals from the signal line to the common signal line.
摘要:
A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
A solid-state imaging device according to the present invention comprises: a region (hereinafter, referred to as a pixel cell 100) in which at least a photodiode 101 for performing photoelectric conversion, a readout MOS transistor 102 for reading out from the photodiode 101 an electric charge photoelectrically converted, and a floating diffusion 103 for reading out and storing the electric charge via the readout MOS transistor 102 from the photodiode are arranged; and a region (hereinafter, referred to as a transistor cell 106) which includes an amplifier MOS transistor 105 having a plurality of two or more said pixel cells 100 connected thereto and a reset MOS transistor 104 for resetting a potential of the floating diffusion 103 so as to be a potential the same as a potential of a power source and in which at least the reset MOS transistor 104 and the amplifier MOS transistors 105 are arranged, and the pixel cell 100 and the transistor cell 106 are two-dimensionally arranged.
摘要:
A capacitor includes a capacitor element including first and second electrodes, an electrolyte solution, first and second collector plates made of metal and joined to the first and second electrodes of the capacitor element, respectively, a case accommodating the capacitor element, the electrolyte solution, the first and second collector plates, a terminal plate placed at an opening of the case and joined to the second collector plate, and a sealing rubber sealing the terminal plate and the opening of the case. The case has a tubular portion and a bottom plate closing the tubular portion. An inner surface of the bottom plate of the case has a contacting portion contacting the first collector plate and a junction portion facing the first collector plate. The first junction portion of the inner surface of the bottom plate has a joining point joined to the first collector plate and a separation part facing the first collector plate around the first joining point by a first gap between the first junction portion and the first collector plate. The first collector plate is located away from the first contacting portion. The capacitor has a high reliability in connecting the electrodes, preventing an unnecessary resistance or a pin hole produced in the case.
摘要:
A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要:
A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要:
An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.