公开(公告)号：US20110159670A1

公开(公告)日：2011-06-30

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/265 ,  G03F7/004 ,  G03F7/027 ,  H01L21/302

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US20110070542A1

公开(公告)日：2011-03-24

申请号：US12562761

申请日：2009-09-18

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

公开(公告)号：US07767984B2

公开(公告)日：2010-08-03

申请号：US12150955

申请日：2008-05-01

Applicant: Burn-Jeng Lin ,  Ching-Yu Chang

Inventor： Burn-Jeng Lin ,  Ching-Yu Chang

IPC: G03F7/00 ,  G21K5/02

CPC classification number: G03F7/40 ,  G03F7/2024

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract translation: 一种用于在光致抗蚀剂图像浸入液体中时使光致抗蚀剂图像硬化的方法，工具和机器。

公开(公告)号：US07718348B2

公开(公告)日：2010-05-18

申请号：US12244857

申请日：2008-10-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

公开(公告)号：US20100093176A1

公开(公告)日：2010-04-15

申请号：US12536805

申请日：2009-08-06

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/306

CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US07531296B2

公开(公告)日：2009-05-12

申请号：US11209684

申请日：2005-08-24

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/405

Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

公开(公告)号：US07482280B2

公开(公告)日：2009-01-27

申请号：US11426233

申请日：2006-06-23

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/302 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

公开(公告)号：US07473517B2

公开(公告)日：2009-01-06

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

IPC: G03F7/30

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

Abstract translation: 在半导体衬底上产生抗蚀剂图像的方法包括：使用包括超临界二氧化碳和碱（例如四甲基氢氧化铵（TMAH））的第一流体在半导体衬底上曝光光致抗蚀剂层并显影曝光的光致抗蚀剂层。 此外，可以使用包括超临界二氧化碳和溶剂如甲醇，乙醇，异丙醇和二甲苯的第二流体来清洗显影的光致抗蚀剂。

公开(公告)号：US20080304025A1

公开(公告)日：2008-12-11

申请号：US11760365

申请日：2007-06-08

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: G03F7/70716 ,  G03F7/70341

Abstract: An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer.

Abstract translation: 浸没式光刻设备包括具有成像透镜的透镜组件，用于将晶片固定在透镜组件下方的晶片台，用于将流体提供到透镜组件和晶片之间的空间的流体模块以及定位在多个提取单元 靠近晶片的边缘。 提取单元被配置为独立地操作以去除设置在透镜组件和晶片之间的空间中的一部分流体。

公开(公告)号：US20080299487A1

公开(公告)日：2008-12-04

申请号：US11828809

申请日：2007-07-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/04 ,  G03F5/00

CPC classification number: G03F7/2041 ,  G03F7/0046

Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

Abstract translation: 一种浸没式光刻抗蚀剂材料，包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。