-
公开(公告)号：US07939242B2
公开(公告)日：2011-05-10
申请号：US12046996
申请日：2008-03-12
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
CPC分类号： G03F7/2041 , G03F7/11
摘要： A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.
摘要翻译： 除了碱溶性聚合物之外，阻挡膜材料还包含具有多个羧基或多价醇化合物的多价羧酸化合物。 因此，多价羧酸化合物或多价醇化合物附着在抗蚀剂膜的表面上，因此除去阻挡膜后除去附着在抗蚀剂膜表面的颗粒。 此外，在显影时同时除去阻挡膜的情况下，可以防止部分未溶解的抗蚀剂膜。
-
公开(公告)号：US20100265477A1
公开(公告)日：2010-10-21
申请号：US12824793
申请日：2010-06-28
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/70891
摘要： In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译： 在使用浸渍光刻的图案形成方法中，在晶片上形成抗蚀剂膜之后，通过用包含不饱和脂肪酸的液体（例如向日葵油或橄榄油，包括油酸）曝光光来选择性地照射抗蚀剂膜来进行图案曝光 酸，提供在抗蚀剂膜上。 在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。
-
公开(公告)号：US07700268B2
公开(公告)日：2010-04-20
申请号：US11010422
申请日：2004-12-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/70341
摘要： An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.
摘要翻译： 曝光系统包括用于将浸没液体供应到形成在基板上的抗蚀剂膜上的液体供应部分; 以及曝光部，其用设置在抗蚀剂膜上的浸渍液体通过掩模曝光光照射抗蚀剂膜。 液体供应部分包括用于在曝光期间循环浸液的浸液池。
-
公开(公告)号：US07655385B2
公开(公告)日：2010-02-02
申请号：US11723056
申请日：2007-03-16
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03G13/283 , G03F7/2041 , G03G13/286 , Y10S430/162
摘要： After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.
摘要翻译： 在形成包括吸湿性化合物的抗蚀剂膜之后，通过在向抗蚀剂膜供水的同时曝光光来选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后，抗蚀剂膜被显影以形成抗蚀剂图案。
-
公开(公告)号：US07393794B2
公开(公告)日：2008-07-01
申请号：US10715433
申请日：2003-11-19
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
CPC分类号： G03G13/283 , G03F7/2041 , G03G13/286 , Y10S430/162
摘要： After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.
摘要翻译： 在形成包括吸湿性化合物的抗蚀剂膜之后，通过在向抗蚀剂膜供水的同时曝光光来选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后，抗蚀剂膜被显影以形成抗蚀剂图案。
-
公开(公告)号：US20070111541A1
公开(公告)日：2007-05-17
申请号：US11545425
申请日：2006-10-11
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
CPC分类号： G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/38
摘要： In a pattern formation method, a barrier film including a polymer and a cross-linking agent for thermally causing a cross-linking reaction of the polymer is formed on a resist film formed on a substrate. Subsequently, the barrier film is annealed for cross-linking the polymer, and pattern exposure is performed by selectively irradiating the resist film with exposing light through the barrier film with a liquid provided on the barrier film. Then, after removing the barrier film, the resist film is developed after the pattern exposure. Thus, a resist pattern made of the resist film is formed.
摘要翻译： 在图案形成方法中，在形成在基板上的抗蚀剂膜上形成包含聚合物的阻挡膜和用于热引发聚合物的交联反应的交联剂。 随后，将阻挡膜退火以交联聚合物，并且通过用设置在阻挡膜上的液体通过阻挡膜曝光光来选择性地照射抗蚀剂膜来进行图案曝光。 然后，在去除阻挡膜之后，抗蚀剂膜在图案曝光之后显影。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。
-
公开(公告)号：US07060775B2
公开(公告)日：2006-06-13
申请号：US10954373
申请日：2004-10-01
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： C08F12/30
CPC分类号： G03F7/0046 , C08F12/20 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5, R6 and R11 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R12 is a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a carbon number not less than 1 and not more than 20; 0
-
公开(公告)号：US07041428B2
公开(公告)日：2006-05-09
申请号：US10415272
申请日：2002-09-12
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115 , Y10S430/146 , Y10S430/167 , Y10S430/168
摘要： A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator:Chemical Formula 1: wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and R2 is a protecting group released by an acid.
摘要翻译： 本发明的图案形成材料含有包含由化学式1表示的单元的基础聚合物和酸产生剂：化学式1：其中R 1是氢原子，氯原子， 氟原子，烷基或含氟原子的烷基; R 2是由酸释放的保护基。
-
公开(公告)号：US07011934B2
公开(公告)日：2006-03-14
申请号：US10442304
申请日：2003-05-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/0751 , G03F7/161 , G03F7/165
摘要： An underlying film having pores or including an organic material is formed on a substrate. In a first chamber, hexamethyldisilazane is supplied onto the surface of the underlying film while annealing the substrate, so as to form a first molecular layer of trimethylsilyl groups on the underlying film. Thereafter, the underlying film is allowed to stand outside the first chamber. Next, in a second chamber, hexamethyldisilazane is supplied onto the surface of the first molecular layer, so as to form a second molecular layer of trimethylsilyl groups on the first molecular layer. Then, a resist film made of a chemically amplified resist material is formed above the underlying film having the second molecular layer thereon. The resist film is subjected to pattern exposure by selectively irradiating with exposing light, and the resist film is developed after the pattern exposure, so as to form a resist pattern.
-
公开(公告)号：US20050266337A1
公开(公告)日：2005-12-01
申请号：US11128438
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0397
摘要： A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7 and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.
摘要翻译： 抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物：其中R 1 R 2，R 3，R 7，R 8和R 8相同或不同， 碳原子数为1以上且20以下的氢原子，氟原子或直链烷基，支链或环状烷基或氟化烷基， R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基或氟化烷基，其中具有 碳数不小于1，不大于20，或由酸释放的保护基; R 9为碳原子数为1以上且20以下的氟原子，直链烷基，支链状或环状烷基或氟化烷基。
-
-
-
-
-
-
-
-
-
搜索结果
228 条记录 (耗时 0.07 秒)
