Real-time semiconductor radiation detector
    61.
    发明授权
    Real-time semiconductor radiation detector 失效
    实时半导体辐射探测器

    公开(公告)号:US5757040A

    公开(公告)日:1998-05-26

    申请号:US667453

    申请日:1996-06-21

    摘要: Semiconductor radial rays detector is provided that improves a breakdown voltage yield of a gate insulating film of a semiconductor radial rays detector and prevents an increase in resistance of a gate electrode caused by the improvement in the breakdown voltage yield. In the inventive semiconductor radial rays detector, material used as a gate electrode 1 of a reading condenser is not an Al film (aluminum film) but a POLY Si film (a polycrystalline silicon film), or silicide or metal including silicide with a high melting point such as WSi (tungsten silicide) (strictly its composition is indefinite as expressed as W.sub.x Si.sub.y) or TiSi (titan silicide) (expressed as Ti.sub.x Si, in the same manner). Further, a contact hole 2 is provided on the gate electrode 1 through an inter-insulating film 4 as the inter-insulating film for wiring, and an Al electrode 3 coupled to an output terminal is provided over the contact

    摘要翻译: 提供半导体径向射线检测器,其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生,并且防止由于击穿电压产量的提高而引起的栅电极的电阻增加。 在本发明的半导体径向射线检测器中,用作读取冷凝器的栅电极1的材料不是Al膜(铝膜),而是POLY Si膜(多晶硅膜),或者包含高熔点的硅化物的硅化物或金属 (硅化钨)(严格地说,其组成如WxSiy所表示的不定)或TiSi(钛硅化物)(以相同的方式表示为TixSi)。 此外,通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2,并且在触点上设置耦合到输出端子的Al电极3

    Photoelectric conversion semiconductor device with insulation film
    62.
    发明授权
    Photoelectric conversion semiconductor device with insulation film 失效
    具有绝缘膜的光电转换半导体器件

    公开(公告)号:US5719414A

    公开(公告)日:1998-02-17

    申请号:US213952

    申请日:1994-03-16

    摘要: A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.

    摘要翻译: 光电转换半导体器件的特征在于,在第一导电型半导体衬底中形成第二导电类型杂质区,第二导电类型杂质区的深度为0.1μm或更小,峰密度为1×1019原子/ cm3或 更多。 制造光电转换半导体器件的方法的特征在于将作为杂质的半导体衬底中的剂量为1×10 16至5×10 16原子/ cm 2的硼或氟化硼离子注入的步骤。

    Laser beam control apparatus
    66.
    发明授权
    Laser beam control apparatus 失效
    激光束控制装置

    公开(公告)号:US5268914A

    公开(公告)日:1993-12-07

    申请号:US892772

    申请日:1992-06-03

    CPC分类号: G11B7/126 H01S5/06832

    摘要: The laser beam control apparatus according to the invention having a photodiode for outputting a current consisting of high and low-frequency components in accordance with the amount of a laser beam emitted from a laser diode. The current output from the photodiode is separated into high and low-frequency components by a CR filter, and the separated low-frequency current is amplified by an amplifier. The current amplified by this amplifier is added to the high-frequency current separated by the CR filter. The resulting sum current is converted into a voltage by an amplifier, and the amount of the laser beam emitted from the laser diode is controlled in accordance with the voltage converted by this amplifier. With this operation, the laser beam output power of the laser diode can be stably controlled in a wide band.

    摘要翻译: 根据本发明的激光束控制装置具有光电二极管,用于根据从激光二极管发射的激光束的量输出由高频和低频分量组成的电流。 来自光电二极管的电流输出由CR滤波器分离成高频和低频分量,分离的低频电流由放大器放大。 由该放大器放大的电流被添加到由CR滤波器分离的高频电流。 所得到的和电流由放大器转换为电压,并且根据由该放大器转换的电压来控制从激光二极管发射的激光束的量。 通过这种操作,可以在宽带内稳定地控制激光二极管的激光束输出功率。

    Solidstate image sensor device
    67.
    发明授权
    Solidstate image sensor device 失效
    固态图像传感器装置

    公开(公告)号:US5254868A

    公开(公告)日:1993-10-19

    申请号:US734262

    申请日:1991-07-22

    申请人: Yutaka Saito

    发明人: Yutaka Saito

    CPC分类号: H01L27/146 H01L27/1465

    摘要: In a semiconductor image sensor device comprising arrayed photo-sensors, a connection electrode used for connecting an external circuit or an aperture on the connection electrode is provided at an opposite side surface to an illuminated surface, and a transparent substrate is provided above the arrayed photo-sensors, whereby the distance between a light source and the photo-sensors can be reduced so as to improve sensitivity and resolving power.

    摘要翻译: 在包括排列的光电传感器的半导体图像传感器装置中,在与被照射表面相对的侧表面上设置用于连接外部电路或连接电极上的孔的连接电极,并且在阵列照片上方设置透明基板 传感器,由此可以减小光源和光电传感器之间的距离,从而提高灵敏度和分辨率。

    Coreless motor
    70.
    发明授权
    Coreless motor 失效
    无害电机

    公开(公告)号:US4103196A

    公开(公告)日:1978-07-25

    申请号:US843038

    申请日:1977-10-17

    CPC分类号: H02K3/04 H02K13/08 H02K23/56

    摘要: A miniature coreless motor in which the coil of the rotor is wound in hollow cylindrical shape rotatable within an air gap between a cylindrical permanent magnet and a cup-shaped yoke, the yoke having pole-pitch zones of alternate polarity. The winding is wound progressively so as to be turned back alternately at the respective end edges to form axially re-entrant bends with the convolutions of the winding forming an inner layer of wire and an outer layer of wire, each convolution being made up of elements which are angularly related so that each convolution passes through pole-pitch zones of different polarity. The elements forming the inner and outer layers of wire cross one another at an angle to form a thin cylindrical two-ply construction in which the end edges are rigid and occupy parallel planes. One of the end edges has the axially-facing insulation superficially removed to expose a conductive surface at the outer periphery of each re-entrant bend. A pair of brushes of resilient spring metal provide localized axial contact with the exposed conductive surfaces of the winding at peripherally spaced points.