Silicate bodies containing coprecipitated oxides
    63.
    发明授权
    Silicate bodies containing coprecipitated oxides 失效
    含有共沉淀氧化物的硅酸盐体

    公开(公告)号:US3678144A

    公开(公告)日:1972-07-18

    申请号:US3678144D

    申请日:1970-06-12

    Inventor: SHOUP ROBERT D

    Abstract: This invention relates to the discovery of a method for incorporating various oxides into silica-containing porous and nonporous glass materials by dissolving soluble compounds of the additive oxides, characterized as MxOy, into solutions, colloidal solutions, or suspensions of soluble silicates, reacting the mixture with an organic compound, and then firing the thus-formed body at temperatures below the softening point of the particular glass composition for a sufficient length of time to produce the porous body or non-porous glass body containing the added oxides intimately bonded to the silica network.

    Abstract translation: 本发明涉及将各种氧化物掺入含二氧化硅的多孔和无孔玻璃材料中的方法的发现,通过将以MxOy为特征的添加剂氧化物的可溶性化合物溶解在可溶性硅酸盐的溶液,胶体溶液或悬浮液中,使混合物 与有机化合物反应,然后在低于特定玻璃组合物的软化点的温度下焙烧如此形成的本体足够长的时间以产生包含与二氧化硅紧密结合的添加氧化物的多孔体或无孔玻璃体 网络。

    Method for manufacturing single crystal

    公开(公告)号:US09863060B2

    公开(公告)日:2018-01-09

    申请号:US15036095

    申请日:2014-11-12

    Abstract: Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.

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