公开(公告)号：US20130075615A1

公开(公告)日：2013-03-28

申请号：US13242677

申请日：2011-09-23

Applicant: CHRISTOPHER D. STARTA ,  ROBERT E. UBER ,  THOMAS TRAUTZSCH ,  FREDERICK J. SCHULER

Inventor： CHRISTOPHER D. STARTA ,  ROBERT E. UBER ,  THOMAS TRAUTZSCH ,  FREDERICK J. SCHULER

IPC: G01J5/08 ,  G01N21/01

CPC classification number: G01N21/59 ,  G01N21/3151 ,  G01N21/3504 ,  G01N2201/023 ,  G01N2201/0636 ,  G01N2201/0662

Abstract: A closed path infrared sensor includes an enclosure, a first energy source within the enclosure, at least a second energy source within the enclosure, at least one detector system within the enclosure and a mirror system external to the enclosure and spaced from the enclosure. The mirror system reflects energy from the first energy source to the at least one detector system via a first analytical path and reflects energy from the second energy source to the at least one detector system via a second analytical path. Each of the first analytical path and the second analytical path are less than two feet in length.

Abstract translation: 封闭路径红外传感器包括外壳，外壳内的第一能量源，外壳内的至少第二能量源，外壳内的至少一个检测器系统和外壳外部与外壳隔开的反射镜系统。 反射镜系统经由第一分析路径将来自第一能量源的能量反射到至少一个检测器系统，并且经由第二分析路径将来自第二能量源的能量反射到至少一个检测器系统。 第一分析路径和第二分析路径中的每一条长度小于两英尺。

公开(公告)号：US20110052448A1

公开(公告)日：2011-03-03

申请号：US12845130

申请日：2010-07-28

Applicant: Takashi FUJITA ,  Sachiko YAMAMOTO ,  Hiroyuki YAMADA ,  Wataru AKAHANE

Inventor： Takashi FUJITA ,  Sachiko YAMAMOTO ,  Hiroyuki YAMADA ,  Wataru AKAHANE

IPC: G01N21/64 ,  G01N21/00

CPC classification number: G01N21/76 ,  G01N2201/023

Abstract: The present invention discloses a method for measuring an amount of an objective component to be measured in a sample, which comprises; preventing an electric charge in an atmosphere in a photometry chamber from transferring to the surface of a solution which generates light due to an energy variation of a substance induced by the objective component in the sample, measuring value of the light, and determining an amount of the objective component in the sample on the basis of the measured value thus obtained, and an instrument used for the method.According to the present invention, in measurement of an objective component in a sample using a spectrophotometer, problems such as between-day variation of signal values or increase of background value, etc. can be solved, and a trace component can be measured in high accuracy and high sensitivity.

Abstract translation: 本发明公开了一种测定样品中要测量的目标成分的量的方法，包括： 防止测光室中的气氛中的电荷转移到由于样品中的目标成分引起的物质的能量变化而产生光的溶液的表面，测量光的量， 基于由此获得的测量值的样品中的客观成分，以及用于该方法的仪器。 根据本发明，在使用分光光度计测定样品中的目标成分的情况下，可以解决信号值的日间变化或背景值的增加等问题，并且可以高度地测量痕量成分 精度高，灵敏度高。

公开(公告)号：US20090127476A1

公开(公告)日：2009-05-21

申请号：US12358548

申请日：2009-01-23

Applicant: Moshe FINAROV

Inventor： Moshe FINAROV

IPC: G21K5/00 ,  G01N21/00

CPC classification number: G01N21/211 ,  G01N21/01 ,  G01N2201/023

Abstract: A method and system are presented for use in optical processing of an article by VUV radiation. The method comprises: localizing incident VUV radiation propagation from an optical head assembly towards a processing site on the article outside the optical head assembly and localizing reflected VUV radiation propagation from said processing site towards the optical head assembly by localizing a medium, non-absorbing with respect to VUV radiation, in within the light propagation path in the vicinity of said site outside the optical head assembly. The level of the medium is controlled by measuring the reflected VUV radiation.

Abstract translation: 提出了一种用于通过VUV辐射对物品进行光学处理的方法和系统。 该方法包括：将来自光学头组件的入射VUV辐射传播定位到光学头组件外部的制品上的处理位置，并将来自所述处理部位的反射的VUV辐射传播定位到光学头组件，定位介质，不吸收 相对于在光学头组件外部的所述位置附近的光传播路径内的VUV辐射。 通过测量反射的VUV辐射来控制介质的水平。

公开(公告)号：US07217942B2

公开(公告)日：2007-05-15

申请号：US10644745

申请日：2003-08-21

Applicant: Hideki Tanaka

Inventor： Hideki Tanaka

IPC: H01L21/00

CPC classification number: H01J37/32935 ,  G01N21/68 ,  G01N2201/0227 ,  G01N2201/023

Abstract: In a plasma processing apparatus that forms plasma from a process gas by supplying the process gas into a processing container and applying high-frequency power to an electrode provided inside the processing container on which a workpiece is placed and executes specific plasma processing on the processing surface of the workpiece, apparatus state parameter data indicating a state of the plasma processing apparatus are obtained through measurement executed by a parameter measuring instrument, optical data are obtained through measurement executed by an optical measuring instrument and electrical data are obtained through measurement executed by an electrical measuring instrument. A means for plasma leak judgment judges that a plasma leak has occurred if there is a fluctuation in the data.

Abstract translation: 在等离子体处理装置中，通过将处理气体供给到处理容器中并将高频电力施加在设置有工件的处理容器内部的电极上，从而从处理气体形成等离子体，并对处理面进行特定的等离子体处理 通过由参数测量仪器执行的测量获得指示等离子体处理装置的状态的装置状态参数数据，通过光学测量仪器执行的测量获得光学数据，并且通过由电气执行的测量获得电气数据 测量仪器。 用于等离子体泄漏判定的装置判断如果数据有波动，则发生等离子体泄漏。

公开(公告)号：US20060170914A1

公开(公告)日：2006-08-03

申请号：US10561538

申请日：2004-06-21

Applicant: Takashi Fujita ,  Sachiko Yamamoto ,  Hiroyuki Yamada ,  Wataru Akahane

Inventor： Takashi Fujita ,  Sachiko Yamamoto ,  Hiroyuki Yamada ,  Wataru Akahane

IPC: G01N1/10

CPC classification number: G01N21/76 ,  G01N2201/023

Abstract: The present invention discloses a method for measuring an amount of an objective component to be measured in a sample, which comprises; preventing an electric charge in an atmosphere in a photometry chamber from transferring to the surface of a solution which generates light due to an energy variation of a substance induced by the objective component in the sample, measuring value of the light, and determining an amount of the objective component in the sample on the basis of the measured value thus obtained, and an instrument used for the method. According to the present invention, in measurement of an objective component in a sample using a spectrophotometer, problems such as between-day variation of signal values or increase of background value, etc. can be solved, and a trace component can be measured in high accuracy and high sensitivity.

Abstract translation: 本发明公开了一种测定样品中要测量的目标成分的量的方法，包括： 防止测光室中的气氛中的电荷转移到由于样品中的目标成分引起的物质的能量变化而产生光的溶液的表面，测量光的量， 基于由此获得的测量值的样品中的客观成分，以及用于该方法的仪器。 根据本发明，在使用分光光度计测定样品中的目标成分的情况下，可以解决信号值的日间变化或背景值的增加等问题，并且可以高度地测量痕量成分 精度高，灵敏度高。

公开(公告)号：US07069768B2

公开(公告)日：2006-07-04

申请号：US10863810

申请日：2004-06-08

Applicant: Kurt Weckström ,  Heikki Haveri ,  Mika Hietala

Inventor： Kurt Weckström ,  Heikki Haveri ,  Mika Hietala

IPC: G01N25/00

CPC classification number: G01N21/3504 ,  G01N21/274 ,  G01N21/61 ,  G01N2201/023 ,  G01N2201/1211 ,  G01N2201/12792

Abstract: The invention concerns a gas analyzer comprising: a measuring volume (2), a radiation source (1) for providing a beam to pass said measuring volume; a heat sink (16) for said radiation source; at least one thermal detector (3) having a hot junction within a support structure and receiving the radiation and a cold junction for reference within the same support structure and protected from said radiation; at least one optical bandpass filter (9) between said hot junction and said radiation source; and a thermal mass (11), which is formed of a material having high thermal conductance. The thermal mass has a cavity with a bottom step (34) and a rim (32), and a first length therebetween. The support structure has a frontal edge (35) and a base plate lip (33), and a second length therebetween. There is a radial gap between the thermal mass and the support structure. Press means urge said support structure in the cavity, whereupon a more efficient thermal contact is either between said frontal edge and said bottom step, or between said base plate lip and said rim. A first thermal barrier (17) is between the heat sink and the thermal mass, and a second thermal barrier (22) surrounds the thermal mass. A shield (19) formed of a material having high thermal conductance covers said second thermal barrier and is in thermal contact with said heat sink.

Abstract translation: 本发明涉及一种气体分析仪，包括：测量体积（2），用于提供光束以通过所述测量体积的辐射源（1） 用于所述辐射源的散热器（16）; 至少一个热探测器（3），其在支撑结构内具有热接合部，并且在相同的支撑结构内接受辐射和冷接点供参考，并保护免受所述辐射; 在所述热接头和所述辐射源之间的至少一个光学带通滤波器（9）; 以及由具有高导热性的材料形成的热质（11）。 热质量具有具有底部台阶（34）和边缘（32）的空腔，并且其间具有第一长度。 支撑结构具有前边缘（35）和基板唇缘（33），并且其间具有第二长度。 在热质和支撑结构之间存在径向间隙。 压制装置促使空腔中的所述支撑结构，由此在所述正面边缘和所述底部台阶之间或所述基板唇缘和所述边缘之间更有效的热接触。 第一热障（17）在散热器和热质量之间，第二热障（22）围绕热质量。 由具有高导热性的材料形成的屏蔽（19）覆盖所述第二热障，并与所述散热器热接触。

公开(公告)号：US07068370B2

公开(公告)日：2006-06-27

申请号：US11151218

申请日：2005-06-13

Applicant: Allan Rosencwaig ,  Lanhua Wei

Inventor： Allan Rosencwaig ,  Lanhua Wei

IPC: G01J4/00

CPC classification number: H01L21/02046 ,  G01N21/211 ,  G01N21/9501 ,  G01N2201/0227 ,  G01N2201/023 ,  H01L21/02054 ,  H01L21/67028 ,  H01L21/67115 ,  H01L22/20

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

Abstract translation: 公开了一种改善半导体晶片测量的方法。 在过去，由于在有意沉积的介电层上的污染层的不可预测的增长，测量的重复性受到不利影响。 在测量之前，通过去除这个污染层可以提高重复性。 通过使晶片进行清洁步骤，可以非破坏性地有效地去除该污染层。 在一个实施例中，通过将晶片暴露于微波辐射来进行清洁。 或者，可以用辐射热源清洁晶片。 这两种清洁方式可以单独使用或彼此组合使用或与其他清洁模式组合使用。 清洁步骤可以在空气，惰性气氛或真空中进行。 一旦执行了清洁，就可以使用任何数量的已知光学测量系统测量晶片。

公开(公告)号：US06714300B1

公开(公告)日：2004-03-30

申请号：US09294869

申请日：1999-04-20

Applicant: Allan Rosencwaig ,  Lanhua Wei

Inventor： Allan Rosencwaig ,  Lanhua Wei

IPC: G01J400

CPC classification number: H01L21/02046 ,  G01N21/211 ,  G01N21/9501 ,  G01N2201/0227 ,  G01N2201/023 ,  H01L21/02054 ,  H01L21/67028 ,  H01L21/67115 ,  H01L22/20

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.