Abstract:
An electron emission device includes a number of second electrodes intersected with a number of first electrodes to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer, an electron collection layer, and an insulating layer stacked together, and the electron collection layer is a conductive layer.
Abstract:
An electron emission element (1) includes an electrode substrate (2) and a thin film electrode (3), and emits electrons from the thin film electrode (3) by voltage application across the electrode substrate (2) and the thin film electrode (3). An electron accelerating layer (4) containing at least insulating fine particles (5) is provided between the electrode substrate (2) and the thin film electrode (3). The electrode substrate (2) has a convexoconcave surface. The thin film electrode (3) has openings (6) above convex parts of the electrode substrate (2).
Abstract:
The present invention provides an electron emitting element, comprising: a first electrode; an insulating layer formed on the first electrode and having an opening of through hole; a second electrode formed on the insulating layer, the second electrode being disposed so as to cover at least the opening and face the first electrode via the opening; and a fine particle layer disposed between the first electrode and the second electrode, the fine particle layer being composed of insulating fine particles and conductive fine particles, wherein the insulating layer is disposed between the first electrode and the fine particle layer, or between the second electrode and the fine particle layer, when a voltage is applied between the first electrode and the second electrode, electrons are emitted from the first electrode and accelerated in the fine particle layer to pass through the second electrode.
Abstract:
The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24− layer alternately laminated in order on the SrTiO3 buffer layer.
Abstract:
A driving method of an electron emitting device which includes a first electrode, a particle layer formed on the first electrode and including insulating particles, and a second electrode formed on the particle layer includes: applying a voltage between the first and second electrodes to emit electrons from the first electrode so that the electrons are accelerated through the particle layer and emitted from the second electrode, wherein the applied voltage includes pulses which have a first frequency and are oscillated at a second frequency lower than the first frequency.
Abstract:
The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particle layer is provided with recesses formed in a surface thereof, the surface facing the second electrode, the recesses each having a depth smaller than a thickness of the insulating fine particle layer, and when a voltage is applied between the first electrode and the second electrode, electrons provided from the first electrode are accelerated in the insulating fine particle layer to be emitted though the second electrode.
Abstract:
Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.
Abstract:
By making Nd concentration in the tunneling insulating film 11 smaller than Nd concentration in the base electrode first layer 16, the accumulated electric charge amount in the tunneling insulating film 11 is reduced and afterimage is decreased. By setting a relation between a position of a stack interface of the base electrode 13 and a thickness of an insulating layer properly, the generation of a device defect is prevented.
Abstract:
There is disclosed a display apparatus using a long-lived MIM electron source that is excellent in grayscale controllability. In a device including an MIM dielectric layer having a film thickness of 9.6 nm, the diode current Id rises exponentially from around 4.8 V together with the voltage. The emission current Ie rises exponentially from 4.7 V. That is, VthIe
Abstract:
The present invention aims to form an electron emission film containing an alkali metal compound or the like without causing alkali attack on the metal wiring. An FED display device comprises: an electron source including an electron emission film 13 on the surface thereof; and metal wirings 17, 18 and the like for supplying a signal or the like to the electron source. After forming on the surface of the metal wiring 18 an corrosion resistant film 21 comprising a reactive film or adsorption film with phosphorus, an alkali metal or the like is coated onto or added into the electron emission film 13. The addition of phosphorus is made fewer than the chemical equivalent of the alkali metal salt. Such configuration can improve the electron emission efficiency of the electron source without the metal wiring being corroded by alkali metal or the like.