Electron emitting element and method for producing the same
    63.
    发明授权
    Electron emitting element and method for producing the same 有权
    电子发射元件及其制造方法

    公开(公告)号:US08860293B2

    公开(公告)日:2014-10-14

    申请号:US13086597

    申请日:2011-04-14

    CPC classification number: H01J1/312 B82Y10/00 H01J9/022 H01J2201/3125

    Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating layer formed on the first electrode and having an opening of through hole; a second electrode formed on the insulating layer, the second electrode being disposed so as to cover at least the opening and face the first electrode via the opening; and a fine particle layer disposed between the first electrode and the second electrode, the fine particle layer being composed of insulating fine particles and conductive fine particles, wherein the insulating layer is disposed between the first electrode and the fine particle layer, or between the second electrode and the fine particle layer, when a voltage is applied between the first electrode and the second electrode, electrons are emitted from the first electrode and accelerated in the fine particle layer to pass through the second electrode.

    Abstract translation: 本发明提供一种电子发射元件,包括:第一电极; 绝缘层,其形成在所述第一电极上并且具有通孔的开口; 形成在所述绝缘层上的第二电极,所述第二电极被设置成至少覆盖所述开口并经由所述开口面对所述第一电极; 以及设置在所述第一电极和所述第二电极之间的细颗粒层,所述细颗粒层由绝缘细颗粒和导电细颗粒构成,其中所述绝缘层设置在所述第一电极和所述细颗粒层之间,或者所述第二电极 电极和细粒层,当在第一电极和第二电极之间施加电压时,电子从第一电极发射并在微粒层中加速以通过第二电极。

    Electron emitting source and substrate for thin film growth
    64.
    发明授权
    Electron emitting source and substrate for thin film growth 失效
    用于薄膜生长的电子发射源和衬底

    公开(公告)号:US08742393B2

    公开(公告)日:2014-06-03

    申请号:US13415039

    申请日:2012-03-08

    CPC classification number: H01J1/312 B82Y10/00

    Abstract: The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24− layer alternately laminated in order on the SrTiO3 buffer layer.

    Abstract translation: SrTiO3缓冲层是通过层压Sr2 + O2-层和Ti4 + O24-层而形成的。 缓冲层的表面用Ti4 + O24层终止。 在缓冲层上形成LaAlO 3薄膜层。 薄膜层包括在SrTiO 3缓冲层上依次交替层叠的La3 + O2层和Al3 + O24层。

    Electron emitting device and driving method thereof
    65.
    发明授权
    Electron emitting device and driving method thereof 有权
    电子发射器件及其驱动方法

    公开(公告)号:US08559852B2

    公开(公告)日:2013-10-15

    申请号:US13292364

    申请日:2011-11-09

    Abstract: A driving method of an electron emitting device which includes a first electrode, a particle layer formed on the first electrode and including insulating particles, and a second electrode formed on the particle layer includes: applying a voltage between the first and second electrodes to emit electrons from the first electrode so that the electrons are accelerated through the particle layer and emitted from the second electrode, wherein the applied voltage includes pulses which have a first frequency and are oscillated at a second frequency lower than the first frequency.

    Abstract translation: 一种电子发射器件的驱动方法,包括:第一电极,形成在第一电极上并包括绝缘粒子的粒子层和形成在粒子层上的第二电极,包括:在第一和第二电极之间施加电压以发射电子 从第一电极使得电子被加速通过粒子层并从第二电极发射,其中所施加的电压包括具有第一频率并且以低于第一频率的第二频率振荡的脉冲。

    Method and apparatus for modifying object with electrons generated from cold cathode electron emitter
    67.
    发明授权
    Method and apparatus for modifying object with electrons generated from cold cathode electron emitter 有权
    用冷阴极电子发射体产生的电子修饰物体的方法和装置

    公开(公告)号:US07898160B2

    公开(公告)日:2011-03-01

    申请号:US10572748

    申请日:2004-11-25

    Abstract: Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

    Abstract translation: 提供了用电子修饰物体的装置和方法,通过该装置和方法,即使具有相对较宽的待处理表面积,物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。 该方法使用具有根据隧道效应从平面电子发射部分发射电子的能力的冷阴极电子发射体,并且优选地包括一对电极,以及包括设置在电极之间的纳米晶硅的强场漂移层。 该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。

    Image display apparatus
    68.
    发明申请
    Image display apparatus 有权
    图像显示装置

    公开(公告)号:US20090039761A1

    公开(公告)日:2009-02-12

    申请号:US12153509

    申请日:2008-05-20

    Abstract: By making Nd concentration in the tunneling insulating film 11 smaller than Nd concentration in the base electrode first layer 16, the accumulated electric charge amount in the tunneling insulating film 11 is reduced and afterimage is decreased. By setting a relation between a position of a stack interface of the base electrode 13 and a thickness of an insulating layer properly, the generation of a device defect is prevented.

    Abstract translation: 通过在基极电极第一层16中使隧道绝缘膜11中的Nd浓度小于Nd浓度,隧道绝缘膜11中的累积电荷量减少,残影减少。 通过适当地设定基极13的堆叠界面的位置与绝缘层的厚度之间的关系,防止了器件缺陷的产生。

    Image display device and manufacturing method of the same
    70.
    发明申请
    Image display device and manufacturing method of the same 审中-公开
    图像显示装置及其制造方法相同

    公开(公告)号:US20080246387A1

    公开(公告)日:2008-10-09

    申请号:US12078775

    申请日:2008-04-04

    Abstract: The present invention aims to form an electron emission film containing an alkali metal compound or the like without causing alkali attack on the metal wiring. An FED display device comprises: an electron source including an electron emission film 13 on the surface thereof; and metal wirings 17, 18 and the like for supplying a signal or the like to the electron source. After forming on the surface of the metal wiring 18 an corrosion resistant film 21 comprising a reactive film or adsorption film with phosphorus, an alkali metal or the like is coated onto or added into the electron emission film 13. The addition of phosphorus is made fewer than the chemical equivalent of the alkali metal salt. Such configuration can improve the electron emission efficiency of the electron source without the metal wiring being corroded by alkali metal or the like.

    Abstract translation: 本发明旨在形成含有碱金属化合物等的电子发射膜,而不会对金属布线产生碱侵蚀。 FED显示装置包括:电子源,其表面上包括电子发射膜13; 以及用于向电子源提供信号等的金属布线17,18等。 在金属布线18的表面上形成后,将含有磷,碱金属等的反应性膜或吸附膜的耐腐蚀膜21涂布在电子发射膜13上或添加到电子发射膜13中。添加磷更少 比化学当量的碱金属盐。 这种构造可以提高电子源的电子发射效率,而不会使金属布线被碱金属等腐蚀。

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