公开(公告)号：US06441390B2

公开(公告)日：2002-08-27

申请号：US09753559

申请日：2001-01-04

申请人： Junichi Sato ,  Nobuyuki Saotome

发明人： Junichi Sato ,  Nobuyuki Saotome

IPC分类号： H01L2906

CPC分类号： H01J3/022 ,  H01J1/308

摘要： Disclosed is an electron discharging apparatus capable of fully accelerating electrons emitted from an electron discharging portion consisting of a pn-junction by effect of securing a greater exposure area of an accelerating electrode against said electron discharging portion. The inventive electron discharging apparatus comprises; a pn-junction formed on a surface side of a semiconductor substrate; an insulating film formed on the semiconductor substrate; a first aperture portion formed through a first insulating film formed on the pn-junction; and an accelerating electrode which is formed on the first insulating film by way of surrounding periphery of the first aperture portion. The accelerating electrode is formed so that inner edge portion of the accelerating electrode is projected into the first aperture portion area.

摘要翻译： 公开了一种电子放电装置，其能够完全加速从由pn结组成的电子放电部分发射的电子，其特征在于确保加速电极的较大曝光面积抵靠所述电子放电部分。 本发明的电子放电装置包括： 形成在半导体衬底的表面侧上的pn结; 形成在半导体衬底上的绝缘膜; 通过形成在pn结上的第一绝缘膜形成的第一开口部; 以及通过围绕第一开口部的周围形成在第一绝缘膜上的加速电极。 加速电极形成为使加速电极的内缘部突出到第一开口部区域。

公开(公告)号：US06433473B1

公开(公告)日：2002-08-13

申请号：US09258021

申请日：1999-02-25

申请人： Kishore K. Chakravorty ,  Fariborz Nadi ,  Christopher J. Spindt ,  Ronald L. Hansen ,  Colin D. Stanners

发明人： Kishore K. Chakravorty ,  Fariborz Nadi ,  Christopher J. Spindt ,  Ronald L. Hansen ,  Colin D. Stanners

IPC分类号： H01J162

CPC分类号： H01J9/148 ,  H01J3/022 ,  H01J29/02

摘要： A structure and method for forming an column electrode for a field emission display device wherein the column electrode is disposed beneath the field emitters and the row electrode. In one embodiment, the present invention comprises depositing a resistor layer over portions of a column electrode. Next, an inter-metal dielectric layer is deposited over the column electrode. In the present embodiment, the inter-metal dielectric layer is deposited over portions of the resistor layer and over pad areas of the column electrode. After the deposition of the inter-metal dielectric layer, the column electrode is subjected to an anodization process such that exposed regions of the column electrode are anodized. In so doing, the present invention provides a column electrode structure which is resistant to column to row electrode shorts and which is protected from subsequent processing steps.

摘要翻译： 一种用于形成用于场发射显示装置的列电极的结构和方法，其中列电极设置在场发射极和行电极之下。 在一个实施例中，本发明包括在列电极的部分上沉积电阻层。 接下来，在列电极上沉积金属间介电层。 在本实施例中，金属间介电层沉积在列电极的电阻层和焊盘区域的部分上。 在沉积金属间电介质层之后，对柱电极进行阳极氧化处理，使得阳极氧化柱电极的露出区域。 在这样做时，本发明提供了一种对柱对电极短路有抵抗力的列电极结构，并且不受后续处理步骤的保护。

公开(公告)号：US06414421B1

公开(公告)日：2002-07-02

申请号：US09431894

申请日：1999-11-02

申请人： Hironori Imura ,  Nobuya Seko ,  Yoshinori Tomihari

发明人： Hironori Imura ,  Nobuya Seko ,  Yoshinori Tomihari

IPC分类号： H01J1910

CPC分类号： H01J3/022

摘要： There is provided a field emission cold cathode including (a) an electrically conductive substrate, (b) a plurality of emitter cones formed at a surface of the substrate, (c) a gate electrode being formed as a first resistive layer and a second resistive layer formed on the first resistive layer, and (d) an insulating layer sandwiched between the substrate and the gate electrode. The first resestive layer has a resistivity higher than a resistivity of the second resistive layer. The second resistive layer is composed of metal or a metal compound. The gate electrode and the insulating layer are formed with a plurality of openings in alignment with each other, with the emitter cones being formed in the openings in alignment with each other, with the emitter cones which includes a predetermined number of the emitter cones. The substrate is formed with trenches surrounding each of the groups when viewed in a direction of a normal line of the substrate, and trenches are filled with an electrical insulator. The field emission cold cathode can avoid being destroyed due to abnormal discharge occurring between an emitter cone and a gate electrode without reducing the density at which the emitter cones can be arranged on the substrate.

摘要翻译： 提供一种场致发射冷阴极，其包括（a）导电衬底，（b）形成在衬底的表面处的多个发射极锥，（c）形成为第一电阻层的栅电极和第二电阻 形成在第一电阻层上的层，以及（d）夹在基板和栅电极之间的绝缘层。 第一消音层的电阻率高于第二电阻层的电阻率。 第二电阻层由金属或金属化合物构成。 栅电极和绝缘层形成有彼此对准的多个开口，其中发射极锥体彼此对准地形成在开口中，发射极锥体包括预定数量的发射器锥体。 当从衬底的法线方向观察时，衬底形成有围绕每个组的沟槽，并且沟槽填充有电绝缘体。 场致发射冷阴极可以避免由于发射极锥体和栅电极之间的异常放电而被破坏，而不会降低发射极锥体可以布置在衬底上的密度。

公开(公告)号：US06413577B1

公开(公告)日：2002-07-02

申请号：US08899844

申请日：1997-07-24

申请人： Surjit S. Chadha ,  Robert T. Rasmussen

发明人： Surjit S. Chadha ,  Robert T. Rasmussen

IPC分类号： C23C1640

CPC分类号： H01J3/022 ,  H01J29/863 ,  H01J2329/00

摘要： A process for operating a field emission display (FED) is disclosed. The FED has a faceplate and a baseplate, and a layer of praseodymium-manganese oxide disposed between the faceplate and baseplate. The layer absorbs photons during operation of the FED, and thus provides for improved performance of the FED because, for example, stray photons do not impact the underlying circuitry of the FED.

摘要翻译： 公开了一种用于操作场发射显示（FED）的处理。 FED具有面板和底板，并且设置在面板和底板之间的一层镨锰氧化物。 该层在FED的操作期间吸收光子，因此提供了FED的改善的性能，因为例如杂散光子不影响FED的底层电路。

公开(公告)号：US06404138B1

公开(公告)日：2002-06-11

申请号：US09568250

申请日：2000-05-10

申请人： Akihiko Okamoto ,  Kazuo Konuma

发明人： Akihiko Okamoto ,  Kazuo Konuma

IPC分类号： G09G310

CPC分类号： H01J29/481 ,  H01J3/022

摘要： A method of driving a cold cathode element, includes (a) providing a plurality of cold cathodes; (b) deflecting a plurality of electron beams respectively emitted from the plurality of cold cathodes; (c) providing at least one control electrode for at least one of the plurality of cold cathodes, wherein an electric field above the control electrode is changed when a voltage is applied to the control electrode; and (d) controlling the voltage applied to the control electrode such that the plurality of electron beams are concentrated on a fluorescent surface.

摘要翻译： 驱动冷阴极元件的方法包括：（a）提供多个冷阴极; （b）偏转从多个冷阴极分别发射的多个电子束; （c）为多个冷阴极中的至少一个提供至少一个控制电极，其中当控制电极施加电压时，控制电极上方的电场改变; 以及（d）控制施加到控制电极的电压，使得多个电子束集中在荧光表面上。

公开(公告)号：US06400068B1

公开(公告)日：2002-06-04

申请号：US09484665

申请日：2000-01-18

申请人： James E. Jaskie ,  Albert Alec Talin ,  Bernard F. Coll ,  Kathleen Anne Tobin

发明人： James E. Jaskie ,  Albert Alec Talin ,  Bernard F. Coll ,  Kathleen Anne Tobin

IPC分类号： H01J1304

CPC分类号： H01J3/022

摘要： A field emission device (100) includes an electron emitter (115) and an emitter-enhancing electrode (117) having an enhanced-emission structure (131), which is disposed proximate to electron emitter (115). Enhanced-emission structure (131) is embodied by, for example, each of the following structures: a tapered portion (118) of emitter-enhancing electrode (117), an electron-emissive edge (135) that is generally parallel to an axis (136) of electron emitter (115), a combination of a conductive layer (137) and an electron-emissive layer (138) that is disposed proximate to an edge (133) of conductive layer (137), and an electron-emissive layer (146) having a thickness of less than about 500 angstroms.

摘要翻译： 场致发射器件（100）包括电子发射器（115）和具有增强发射结构（131）的发射极增强电极（117），其设置在电子发射器（115）附近。 增强发射结构（131）通过例如以下每个结构实现：发射极增强电极（117）的锥形部分（118），大致平行于轴线的电子发射边缘（135） 电子发射器（115）的电极（136），靠近导电层（137）的边缘（133）设置的导电层（137）和电子发射层（138）的组合，以及电子发射 层（146）具有小于约500埃的厚度。

公开(公告)号：US20020055319A1

公开(公告)日：2002-05-09

申请号：US10012612

申请日：2001-12-12

发明人： David S.Y. Hsu

IPC分类号： H01J009/24

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

摘要： A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

公开(公告)号：US20020036599A1

公开(公告)日：2002-03-28

申请号：US09956305

申请日：2001-09-20

发明人： Michiyo Nishimura ,  Daisuke Sasaguri ,  Kazushi Nomura

IPC分类号： G09G001/06

CPC分类号： H01J3/022 ,  G09G3/22 ,  G09G2320/02 ,  G09G2320/0238 ,  H04N5/70

摘要： Disclosed are methods for driving an electron-emitting device, an electron source, and an image-forming apparatus, driving circuits for an electron source and an image-forming apparatus, and an electron source and an image-forming apparatus, with each of which electron emission is effectively halted. A voltage (VgnullVc)>0 is applied to an electron-emitting device placed in a driving state in which electrons should be emitted, thereby having the electron-emitting device emit electrons. A voltage (VgnullVc)

摘要翻译： 公开了用于驱动电子发射器件，电子源和图像形成装置，用于电子源和图像形成装置的驱动电路以及电子源和图像形成装置的方法，其中每个 电子发射被有效地停止。 将电压（Vg-Vc）> 0施加到放置在其中应该发射电子的驱动状态的电子发射器件中，从而使电子发射器件发射电子。 将电压（Vg-Vc）<0施加到放置在不发射电子的停止状态的电子发射器件，从而使电子发射器件停止电子发射。 以这种方式，在停止状态下在阴极电极和栅电极之间形成的电场与在驱动状态下形成的电场相反，从而容易地削弱朝向阳极电极的电场，并且有效地 抑制停止状态下的电子发射。

公开(公告)号：US06353285B1

公开(公告)日：2002-03-05

申请号：US09624362

申请日：2000-07-24

申请人： John K. Lee ,  Behnam Moradi

发明人： John K. Lee ,  Behnam Moradi

IPC分类号： H01J162

CPC分类号： H01J3/022

摘要： An emitter substructure and methods for manufacturing the substructure are described. A substrate has a p-region formed at a surface of the substrate. A n-tank is formed such that the p-region surrounds a periphery of the n-tank. An emitter is formed on and electrically coupled to the n-tank. A dielectric layer is formed on the substrate that includes an opening surrounding the emitter. An extraction grid is formed on the dielectric layer. The extraction grid includes an opening surrounding and in close proximity to a tip of the emitter. An insulating region is formed at a lower boundary of the n-tank. The insulating region electrically isolates the emitter and the n-tank along at least a portion of the lower boundary beneath the opening. The insulating region thus functions to displace a depletion region associated with a boundary between the p-region and the n-tank from an area that can be illuminated by photons traveling through the extraction grid or openings in the extraction grid. This reduces distortion in field emission displays.

摘要翻译： 描述了一种发射器子结构及其制造方法。 衬底具有形成在衬底的表面上的p区。 形成n型罐，使得p型区域围绕n型罐的周边。 发射极形成在n电池上并电耦合到n型电池。 在基板上形成介电层，该介质层包括围绕发射极的开口。 在电介质层上形成提取栅格。 提取格栅包括围绕并且紧邻发射器的尖端的开口。 在n型罐的下边界处形成绝缘区域。 绝缘区域沿着开口下方的下边界的至少一部分电隔离发射极和n坦克。 因此，绝缘区域用于从可以由穿过提取栅格中的光子或提取栅格中的开口的光子照射的区域移位与p区域和n坦克之间的边界相关联的耗尽区域。 这减少了场致发射显示器的失真。

公开(公告)号：US06351059B1

公开(公告)日：2002-02-26

申请号：US09399518

申请日：1999-09-20

申请人： Hisashi Takemura

发明人： Hisashi Takemura

IPC分类号： H01J102

CPC分类号： H01J3/022

摘要： A field-emission type cold cathode is disclosed, by which the degradation of the withstand voltage between the gate electrode and emitter and discharge destruction are suppressed, and the operating voltage and the distance between the gate electrode and emitter can be reduced. The cold cathode comprises a substrate (on a surface of which an emitter is formed) for functioning as a leading emitter electrode; and a gate electrode, formed via an insulating film on the substrate, having an aperture which surrounds the emitter via a space. The height of a boundary (which faces the space) between the insulating film and the substrate is lower than the height of the surface of the substrate on which the emitter is formed. An insulated trench surrounds the area on which the emitter is formed, where the above boundary is placed between the emitter and the trench, and a part of the insulating film is present between the boundary and the trench.

摘要翻译： 公开了一种场致发射型冷阴极，通过该场致发射型冷阴极，能够抑制栅电极与发射极之间的耐电压劣化和放电破坏，能够降低工作电压和栅电极与发射极之间的距离。 冷阴极包括用作起始发射电极的基板（在其表面上形成发射极）; 以及通过基板上的绝缘膜形成的具有经由空间围绕发射极的孔径的栅电极。 绝缘膜和基板之间的边界（其面向空间）的高度低于其上形成发射体的基板的表面的高度。 绝缘沟槽围绕形成发射体的区域，其中上述边界位于发射极和沟槽之间，绝缘膜的一部分存在于边界和沟槽之间。