Abstract:
A method of detecting objects with a night vision system is provided. The night vision system includes a light source and a camera. The method includes activating the light source as a sequence of light pulses wherein each light pulse is increasing in intensity for a predetermined number of pulses to form a pulse train. The camera is activated as a corresponding sequence of detection windows wherein each of the windows corresponds to one of the light pulses for receiving reflected light resulting from the corresponding light pulse. The light pulses and detection windows are configured such that a time delay between each corresponding light pulse and detection window is increasing throughout the pulse train. In another variation, the camera gain is increased throughout the pulse train. In yet another variation, the light pulses have constant amplitude, the camera gain is constant for all pulses, and the number of camera gain windows increases as the delay increases. In all cases, objects nearer the night vision system are imaged with lower intensity light, less camera gain, and/or fewer laser pulses than objects further away to provide a composite image in which the apparent brightness of near and far objects can be controlled.
Abstract:
According to one embodiment, detecting radiation includes receiving a first laser drive field at a cell comprising a medium having a number of states. The first laser drive field has a frequency approximately equivalent to a transition frequency between a first state and a second state. A second laser drive field having a frequency approximately equivalent to a transition frequency between the first state and a third state, and an infrared field having a frequency approximately equivalent to a transition frequency between the third state and a fourth state are received. The medium has a transition between the second state and the third state substantially forbidden to support optimal coherence on the transition between the second state and the third state. The infrared field is upconverted to generate a detectable field having a frequency approximately equivalent to a transition frequency between the second state and the fourth state.
Abstract:
The invention is directed to a radiation thermometer with multiple sensor elements for detecting infrared radiation from differing regions, a radiation sensor with multiple infrared sensor elements, and a method for determining a temperature using a radiation thermometer equipped with such a radiation sensor. The radiation sensor (10) includes multiple optical elements (45, 50, 55) which are associated with a single or multiple sensor elements (30) and define the solid angle from which radiation can impinge on the respective sensor elements. A method for taking a patient's temperature using an ear thermometer equipped with a radiation sensor of the present invention is based on the tympanic membrane having a higher temperature than the ear canal. Hence part of the sensor elements that view the tympanic membrane will detect a higher temperature than the remaining sensors that view the ear canal. Accordingly, only temperature signals from the tympanic membrane are used for evaluation.
Abstract:
In accordance with the present invention, a microbolometer focal plane array is provided with at least one thermally-shorted microbolometer detector that is thermally shorted to the microbolometer focal plane array substrate. A characteristic relationship is empirically derived for determining a corrected resistance value for each detector of the microbolometer focal plane array in response to radiation from a target scene as a function of the corresponding detector resistance value, the thermally-shorted microbolometer detector resistance value, and the empirically derived characteristic relationship.
Abstract:
A pyroelectric detector with significantly reduced microphonic noise sensitivity that includes a pyroelectric detector element constructed from a z-cut LiNbO3 or LiTaO3 electret. Selective domain reversal is accomplished in the electret by applying an electric field. Electrodes are attached to either surface of the electret spanning the domain reversed region and a portion of the original domain region to create areas of equal and opposite sensitivity. The detector is mounted in an electrically grounded container or housing. The detector may also be constructed having multiple detector regions to accommodate resonant acoustic frequencies of the electret, to function as a position sensor, or both. In other words, the position sensor has multiple domain regions that also accommodate acoustic frequencies. The detector may also be constructed having domain reversed regions placed on the electret in a periodic pattern having a geometry and spacing that is related to the acoustic impulse response of the electret. Needle domains may also be interspersed in portions or throughout the electret to scatter acoustic waves and thereby reduce acoustic noise. Multiple detectors can be produced in a simple and inexpensive manner using shadow masking techniques.
Abstract:
The present invention provides for an improved electromagnetic radiation detector having a micromachined electrostatic chopping device. The MEMS flexible film chopping device provides reliability, efficiency, noise reduction and temperature fluctuation compensation capabilities to the associated electromagnetic radiation detector. An electromagnetic radiation detector having an electrostatic chopper device comprises a detector material element, first and second electrodes in electrical contact with the detector material element and electrically isolated from one another. Additionally, the chopper device will incorporate a flexible film actuator overlying the detector material layer and moveable relative thereto. The flexible film actuator will typically include an electrode element and a biasing element such that the actuator remains in a fully curled, open state absent electrostatic voltage and moves to a fully uncurled, closed state upon the application of electrostatic voltage. Arrays that incorporate a plurality of electromagnetic radiation detectors and/or electrostatic chopping devices are additionally provided for.
Abstract:
A unit cell including a substrate; an active circuit disposed on the substrate; and an arrangement disposed on the substrate for routing a plurality of conductors thereover. In the illustrative implementation, the routing arrangement includes first, second and third ground planes disposed on the substrate, a first layer of conductors disposed between the first and second planes, and a second layer of conductors disposed between the second and the third planes. Each cell is adapted to connect to a device such as a detector. The inventive unit cell enables an improved focal plane array design with a smaller unit cell supporting smaller detector sizes. Smaller detector pitch allows higher density detector arrays. The inventive fan-out approach allows for complicated circuitry to be located outside the array. This permits the utilization of more sophisticated analog signed processing, such as a multiple sample approach. Multiple sampling results in a much more accurate digital Gaussian curvefit, which increases the range and intensity accuracy of readout electronics.
Abstract:
A thermal-type infrared radiation detector cell includes a diaphragm structural body that forms a gap of a predetermined width over a semiconductor substrate. The diaphragm structural body is capable of either providing metal wiring films that doubles as an infrared radiation reflector film or providing a high refractive index film having a thickness set to satisfy the expression d=&lgr;×{1/(4×n)}, where n is the refractive index of the high refractive index film, and &lgr; is the wavelengths of infrared rays. As a result, in the former option, no separate infrared radiation reflector film is required, whilst in the latter no separate infrared radiation absorption layer is required. This facilitates the manufacturing process and improves the sensitivity in infrared radiation detection.
Abstract:
A high resolution room temperature infrared camera requires no cryogenic cooling and high vacuum packaging, normally though necessary for infrared target detection, by using a “blind” polycrystalline lead salt resistor in combination with a matched active polycrystalline lead salt photoresistor both maintained at room temperature to provide a differential output indicative of an IR generating target. As a result of the matched components, the differential output nulls out the dark current which is the result of the ambient at the camera. The high degree of linearity associated with polycrystalline photoresistors permits fabrication of a differential detector where dark current in the active element is nulled out by equal and opposite current flow in a non-optically active reference resistor. Rather than a reference provided by a mechanical chopper normally used to correct for array non-uniformity, and rather than using costly temperature stabilization, the subject polycrystalline photoresistor provides a factory-setable reference, such that dark current can be canceled with the use of a nearly identical “blind” element beside the optically active element.
Abstract:
A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on which the array of microbridge structures are arranged. The interconnect layer comprises a plurality of conducting interconnect channels providing an electrical connection between the microbridge structures and input contacts on the ROIC such that the microbridge structures are in electrical contact with, but are separated from, the readout silicon integrated circuitry. As the interconnect layer separates the microbridge structures from the ROIC, the detector material, typically a ferroelectric material, may be fabricated on the microbridge structures at a deposition or anneal temperature which is not limited by the avoidance of damage to the ROIC. Deposition temperatures of at least 500° C. or, preferably, at higher temperatures e.g. 700° C.-900° C., may therefore be used, enabling the fabrication of high performance ferroelectric or microbolometer thermal detector arrays. The invention also relates to a method of fabricating high performance thermal detector arrays comprising an interconnect layer.