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    Thermal-type infrared radiation detector cell and image capture device incorporating the same
    1.
    发明授权
    Thermal-type infrared radiation detector cell and image capture device incorporating the same 失效
    热式红外线辐射检测器和包括其的图像捕获装置

    公开(公告)号：US06489614B1

    公开(公告)日：2002-12-03

    申请号：US09662631

    申请日：2000-09-15

    申请人： Haruhiko Deguchi ,  Toshihiko Fukushima ,  Tomohisa Komoda

    发明人： Haruhiko Deguchi ,  Toshihiko Fukushima ,  Tomohisa Komoda

    IPC分类号： G01J500

    CPC分类号： G01J5/20 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14692

    摘要： A thermal-type infrared radiation detector cell includes a diaphragm structural body that forms a gap of a predetermined width over a semiconductor substrate. The diaphragm structural body is capable of either providing metal wiring films that doubles as an infrared radiation reflector film or providing a high refractive index film having a thickness set to satisfy the expression d=&lgr;×{1/(4×n)}, where n is the refractive index of the high refractive index film, and &lgr; is the wavelengths of infrared rays. As a result, in the former option, no separate infrared radiation reflector film is required, whilst in the latter no separate infrared radiation absorption layer is required. This facilitates the manufacturing process and improves the sensitivity in infrared radiation detection.

    摘要翻译： 热式红外线辐射检测器单元包括在半导体衬底上形成预定宽度的间隙的隔膜结构体。 膜结构体能够提供兼作红外辐射反射膜的金属布线膜，或提供厚度设定为满足表达式d = lambdx {1 /（4xn）}的高折射率膜，其中n为 高折射率膜的折射率，lambd是红外线的波长。 结果，在前一种选择中，不需要单独的红外辐射反射膜，而在后者中不需要单独的红外辐射吸收层。 这有助于制造过程并提高红外辐射检测的灵敏度。

    Magnetoresistance effect type thin film magnetic head using high coercion films
    4.
    发明授权
    Magnetoresistance effect type thin film magnetic head using high coercion films 失效
    使用高强度膜的磁阻效应型薄膜磁头

    公开(公告)号：US5402292A

    公开(公告)日：1995-03-28

    申请号：US951985

    申请日：1992-09-25

    申请人： Tomohisa Komoda ,  Ryoji Minakata ,  Tohru Kira ,  Akiyoshi Fujii ,  Hiroshi Suzuki ,  Atsuo Mukai

    发明人： Tomohisa Komoda ,  Ryoji Minakata ,  Tohru Kira ,  Akiyoshi Fujii ,  Hiroshi Suzuki ,  Atsuo Mukai

    IPC分类号： G11B5/39 ,  G11B5/187 ,  G11B5/31

    CPC分类号： G11B5/3925 ,  G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistance effect type thin film magnetic head includes a MR element having the electrical resistance changed according to a change in an applied signal magnetic field, a lead electrode for detecting a voltage change generated across the ends of the MR element in which a change in electrical resistance is generated, and high coercive force films for applying a weak magnetic field to the MR element. The high coercive force films are arranged in the proximity of the ends of the MR element and at a predetermined position between the ends. According to this structure, a weak magnetic field is applied in uniform over the entire MR element to facilitate unification of magnetic domain of the MR element even in the case of a long MR element. Therefore, unification of magnetic domain can easily be carried out over the entire region of the MR element without increasing the film thickness of the high coercive force film even in a case of a wide track width, resulting in a thin film magnetic head with no Barkhausen noise generation.

    摘要翻译： 磁阻效应型薄膜磁头包括具有根据施加的信号磁场的变化而改变的电阻的MR元件，用于检测在MR元件的两端产生的电压变化的引线电极，其中电变化 产生电阻，以及用于向MR元件施加弱磁场的高矫顽力膜。 高矫顽力膜布置在MR元件的端部附近并且在端部之间的预定位置处。 根据该结构，在整个MR元件上施加均匀的弱磁场，以便即使在长MR元件的情况下也能使MR元件的磁畴的统一化。 因此，即使在宽磁道宽度的情况下，也可以在MR元件的整个区域上容易地进行磁畴的统一，而不会增加高矫顽力膜的膜厚，导致没有Barkhausen的薄膜磁头 噪音发生。

    Perpendicular magnetic recording medium
    5.
    发明授权
    Perpendicular magnetic recording medium 失效
    垂直磁记录介质

    公开(公告)号：US4725482A

    公开(公告)日：1988-02-16

    申请号：US685838

    申请日：1984-12-24

    申请人： Tomohisa Komoda ,  Mamoru Ishizuka ,  Shuhei Tsuchimoto ,  Mitsuhiko Yoshikawa

    发明人： Tomohisa Komoda ,  Mamoru Ishizuka ,  Shuhei Tsuchimoto ,  Mitsuhiko Yoshikawa

    IPC分类号： G11B5/64 ,  G11B5/66 ,  G11B5/72

    CPC分类号： G11B5/66 ,  G11B5/72 ,  Y10S428/90 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/265

    摘要： A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10.sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..

    摘要翻译： Co-Cr垂直磁记录介质包括形成在Co-Cr垂直磁化膜上的氧化铬膜和形成在氧化铬膜上的SiO 2保护膜。 氧化铬膜通过在约10-4〜10-3乇的氧气氛中在约300℃〜400℃的温度下对Co-Cr垂直磁化膜的表面进行加热处理而形成 约两个小时。 氧化铬膜的厚度为约20至200安培。 SiO 2保护膜的厚度大于50，氧化铬膜和SiO 2保护膜的总厚度选择在70和300之间。