公开(公告)号：US08510316B2

公开(公告)日：2013-08-13

申请号：US12543826

申请日：2009-08-19

申请人： Akira Shimizu ,  Kazutomo Ushijima ,  Seisuke Tokuda ,  Michiko Tanaka ,  Shinji Fujiwara ,  Nobuo Kawamura

发明人： Akira Shimizu ,  Kazutomo Ushijima ,  Seisuke Tokuda ,  Michiko Tanaka ,  Shinji Fujiwara ,  Nobuo Kawamura

IPC分类号： G06F7/24

CPC分类号： G06F17/30454

摘要： Provided is a database system in which sorting of query results is sped up. The database system stores storage location information in which storage locations of the pieces of data are recorded in a given order. When there is no second task, which is executed based on data that is fetched in a first task, whether every piece of data requested in a third task, which is executed before the first task, has been fetched is determined. In the case where every piece of data requested in the third task has been fetched, data fetched in the first task is output. In the case where some of the data requested in the third task has not been fetched, data fetched in the first task is kept in a temporary buffer until every piece of data requested in the third task is fetched, and then output.

摘要翻译： 提供了一种数据库系统，其中查询结果的排序加快。 数据库系统存储以给定顺序记录数据段的存储位置的存储位置信息。 当不存在基于在第一任务中获取的数据而执行的第二任务时，确定在第一任务之前执行的第三任务中请求的每个数据片段是否已被获取。 在第三任务中请求的每个数据片段被取出的情况下，输出在第一任务中取出的数据。 在第三任务中请求的一些数据尚未获取的情况下，将第一任务中提取的数据保存在临时缓冲区中，直到第三个任务中请求的每个数据片段被提取，然后输出。

公开(公告)号：US20130144867A1

公开(公告)日：2013-06-06

申请号：US13814976

申请日：2011-01-31

申请人： Michiko Tanaka ,  Kazutomo Ushijima ,  Akira Shimizu ,  Seisuke Tokuda ,  Nobuo Kawamura

发明人： Michiko Tanaka ,  Kazutomo Ushijima ,  Akira Shimizu ,  Seisuke Tokuda ,  Nobuo Kawamura

IPC分类号： G06F17/30

CPC分类号： G06F17/30463 ,  G06F17/30486

摘要： It is provided a database processing method including: a first step of receiving a query request instructing to output the requested data as query results in a designated order; a second step of generating a query execution plan including an order of accessing tables for storing the data based on the received query request; a third step of acquiring the data requested based on the query request from the database based on the generated query execution plan; a fourth step of generating intermediate results including the acquired data; a fifth step of sorting the generated intermediate results in the designated order; a sixth step of judging, for each of the intermediate results, whether an order of the sorted intermediate results has been determined; and a seventh step of outputting the intermediate results whose order has been determined as the query results in order from a head thereof.

摘要翻译： 提供了一种数据库处理方法，包括：第一步骤，以指定的顺序接收指示以请求数据作为查询结果输出的查询请求; 生成查询执行计划的第二步骤，所述查询执行计划包括基于接收的查询请求访问用于存储数据的表的顺序; 基于所生成的查询执行计划，从数据库获取基于查询请求所请求的数据的第三步骤; 产生包括所获取的数据的中间结果的第四步骤; 以指定的顺序排列所生成的中间结果的第五步骤; 对于每个中间结果，判断排序的中间结果的顺序是否已被确定的第六步骤; 以及从其头部按顺序输出其顺序已被确定为查询结果的中间结果的第七步骤。

公开(公告)号：US08415259B2

公开(公告)日：2013-04-09

申请号：US13410970

申请日：2012-03-02

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08394466B2

公开(公告)日：2013-03-12

申请号：US12875889

申请日：2010-09-03

申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

IPC分类号： H05H1/24

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

公开(公告)号：US20120241969A1

公开(公告)日：2012-09-27

申请号：US13240054

申请日：2011-09-22

申请人： Mitsuru OKAZAKI ,  Youichi KAJIWARA ,  Naoki TAKAHASHI ,  Akira SHIMIZU

发明人： Mitsuru OKAZAKI ,  Youichi KAJIWARA ,  Naoki TAKAHASHI ,  Akira SHIMIZU

IPC分类号： H01L23/50

CPC分类号： H01L29/0603 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

摘要翻译： 半导体集成电路器件包括：矩形半导体衬底; 形成在所述半导体衬底上或之上的金属布线层; 以及覆盖金属布线层的钝化层。 在半导体基板的角部设置没有形成金属布线层的部分的角部非布线区域。 在金属布线层的靠近半导体基板的角部的部分形成狭缝。 钝化层包括形成在金属布线层上的第一钝化层和形成在第一钝化层上的第二钝化层。 第一钝化层由比第二钝化层的材料软的材料形成。

公开(公告)号：US08257181B2

公开(公告)日：2012-09-04

申请号：US12550825

申请日：2009-08-31

申请人： Akira Shimizu

发明人： Akira Shimizu

IPC分类号： A63F9/24

CPC分类号： G07F17/32 ,  G07F17/3202 ,  G07F17/3206 ,  G07F17/3209 ,  G07F17/3216

摘要： A gaming machine includes at least a human body detection sensor. The human body detection sensor is disposed on a lower face of a housing portion, so as to face downward and face a cabinet main body. In addition, the gaming machine is provided with a sound sensor on an upper face thereof, and starts executing a game in a case where the human body detection sensor responds and then the sound sensor detects a player's voice.

摘要翻译： 游戏机至少包括人体检测传感器。 人体检测传感器设置在壳体部分的下表面上，面向下并面向机壳主体。 此外，游戏机在其上表面设置有声音传感器，并且在人体检测传感器响应的情况下开始执行游戏，然后声音传感器检测到玩家的声音。

公开(公告)号：US08173554B2

公开(公告)日：2012-05-08

申请号：US12901323

申请日：2010-10-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08142862B2

公开(公告)日：2012-03-27

申请号：US12553759

申请日：2009-09-03

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： C23C8/00 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US20110265846A1

公开(公告)日：2011-11-03

申请号：US13144051

申请日：2010-01-04

申请人： Yoshiyuki Nasuno ,  Takanori Nakano ,  Akira Shimizu

发明人： Yoshiyuki Nasuno ,  Takanori Nakano ,  Akira Shimizu

IPC分类号： H01L31/05 ,  H01L31/042

CPC分类号： H01L31/042 ,  H01L31/0201 ,  H01L31/0463 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The thin-film solar cell module according to the present invention has a substrate and a cell module that includes three or more cell strings, each of which has a constant width, and is characterized in that each cell string has a plurality of solar cells which are connected in series, the cell strings are provided on the substrate so as to be aligned in a direction perpendicular to a direction in which the solar cells are connected in series and connected to each other in parallel, the solar cells each have a front surface electrode, a photoelectric conversion layer and a rear surface electrode stacked in this order, the cell strings have contact lines which electrically connect the front surface electrode of one of neighboring solar cells of the solar cells and the rear surface electrode of the other, the solar cells being included in the cell string, and have the same width as the cell string, and at least one of the cell strings at the two ends of the above described three or more cell strings has a width greater than the other cell strings.

摘要翻译： 根据本发明的薄膜太阳能电池模块具有包括三个或更多个具有恒定宽度的单元串的基板和单元模块，其特征在于每个单元串具有多个太阳能电池， 电池串被设置在基板上，以便在与太阳能电池串联连接的方向垂直的方向上对准，并联连接，太阳能电池各自具有前表面 电极，光电转换层和背面电极，电池串具有将太阳能电池的一个相邻的太阳能电池的前表面电极与另一个的背面电极电连接的接触线，太阳能电池 细胞被包含在细胞串中，并且具有与细胞串相同的宽度，并且上述三个或更多个的两端的细胞串中的至少一个 单元格字符串的宽度大于其他单元格字符串。

公开(公告)号：US20110014795A1

公开(公告)日：2011-01-20

申请号：US12832739

申请日：2010-07-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

IPC分类号： H01L21/318

CPC分类号： H01L21/3141 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过改进的等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的应力调谐电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入到反应空间内 放置半导体衬底; 使用高频RF电源和低频RF电源将RF功率应用于反应空间; 并将脉冲中的含氢硅前体引入反应空间，其中等离子体被激发，从而在衬底上形成具有Si-N键的应力调谐电介质膜。