公开(公告)号：US20110049577A1

公开(公告)日：2011-03-03

申请号：US12859665

申请日：2010-08-19

Applicant: Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J. L. de Jong ,  Deepak C. Sekar

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J. L. de Jong ,  Deepak C. Sekar

IPC: H01L23/52

CPC classification number: H01L21/8221 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/76254 ,  H01L21/84 ,  H01L23/481 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11517 ,  H01L27/11551 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/78 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/80001

Abstract: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

公开(公告)号：US20100289524A1

公开(公告)日：2010-11-18

申请号：US12782448

申请日：2010-05-18

Applicant: Zvi Or-Bach ,  James M. Tour ,  Jun Yao ,  Brian Cronquist

Inventor： Zvi Or-Bach ,  James M. Tour ,  Jun Yao ,  Brian Cronquist

IPC: H03K19/173 ,  H01L23/525

CPC classification number: H01L23/5252 ,  H01L23/53276 ,  H01L27/11803 ,  H01L2924/0002 ,  H03K19/17736 ,  H03K19/17748 ,  H03K19/1778 ,  H03K19/17796 ,  H01L2924/00

Abstract: Re-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.

Abstract translation: 本文介绍了使用可重新编程反熔丝的可重新编程反熔丝和结构。 这种结构包括具有至少一个可再编程反熔丝的可配置互连电路，其中所述至少一个可再编程反熔丝被配置为通过在其上施加第一电压而被编程为进行导通，并被配置为被重新编程为不进行 通过在其上施加第二电压，其中第二电压高于第一电压。 此外，重编程反熔丝可以通过在其上施加更高的电压而被配置为永久导通状态。