公开(公告)号：US20100026137A1

公开(公告)日：2010-02-04

申请号：US12533835

申请日：2009-07-31

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Giulio Ricotti

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Giulio Ricotti

IPC分类号： H02N11/00

CPC分类号： H02N1/004

摘要： In an electrostatic micromotor, a mobile substrate faces a fixed substrate, and electrostatic-interaction elements are provided to allow a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement. The electrostatic-interaction elements include electrodes arranged on a facing surface of the fixed substrate (2) facing the mobile substrate. The mobile substrate has indentations, which extend within the mobile substrate starting from a respective facing surface that faces the fixed substrate and define between them projections staggered with respect to the electrodes in the direction of movement. Side walls of the indentations have a first distance of separation at the respective facing surface, and a second distance of separation, greater than the first distance of separation, at an internal region of the indentations.

摘要翻译： 在静电微电机中，移动衬底面向固定衬底，并且提供静电相互作用元件以允许移动衬底相对于固定衬底在移动方向上的相对移动。 静电相互作用元件包括布置在面向移动基板的固定基板（2）的面对表面上的电极。 移动基板具有凹槽，其从移动基板的相对面朝向固定基板开始并且在它们之间限定在移动方向上相对于电极交错的凸起之间延伸的移动基板。 凹陷的侧壁在相应的相对表面处具有第一分离距离，并且在凹陷的内部区域处具有大于分离距离的第二距离。

公开(公告)号：US07138875B2

公开(公告)日：2006-11-21

申请号：US10723705

申请日：2003-11-26

申请人： Bruno Murari ,  Alessandro Moscatelli ,  Lorenzo Labate

发明人： Bruno Murari ,  Alessandro Moscatelli ,  Lorenzo Labate

IPC分类号： H03F3/04

CPC分类号： H03F1/223

摘要： A power amplifier comprising at least a load element and at least an active element inserted, in series to each other, between a first and a second voltage reference is described. Advantageously, according to an embodiment of the invention, the load element comprises a DMOS transistor.

摘要翻译： 描述了功率放大器，其至少包括负载元件和在第一和第二参考电压之间彼此串联插入的至少一个有源元件。 有利地，根据本发明的实施例，负载元件包括DMOS晶体管。

公开(公告)号：US20050009300A1

公开(公告)日：2005-01-13

申请号：US10893021

申请日：2004-07-16

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Benedetto Vigna

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Benedetto Vigna

IPC分类号： H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/482 ,  H01L21/44

CPC分类号： H01L24/01 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/4827 ,  H01L2224/274 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082

摘要： The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

公开(公告)号：US06638836B1

公开(公告)日：2003-10-28

申请号：US09727608

申请日：2000-11-30

申请人： Bruno Murari ,  Benedetto Vigna ,  Simone Sassolini ,  Francesco Ratti ,  Alberto Alessandri

发明人： Bruno Murari ,  Benedetto Vigna ,  Simone Sassolini ,  Francesco Ratti ,  Alberto Alessandri

IPC分类号： H01L2130

CPC分类号： G11B5/5552

摘要： The manufacture process includes: forming a first wafer of semiconductor material housing integrated electronic components forming a microactuator control circuit and a signal preamplification circuit; forming microactuators, each including a rotor and a stator, in a surface portion of a second wafer of semiconductor material; attaching the second wafer to the first wafer, with the surface portion of the second wafer facing the first wafer; thinning the second wafer; attaching the second wafer to a third wafer to obtain a composite wafer; thinning the first wafer; cutting the composite wafer into a plurality of dice connected to a protection chip; removing the protection chip; attaching read/write transducers to the dice; and attaching the dice to supporting blocks for hard-disk drivers.

摘要翻译： 制造方法包括：形成容纳形成微致动器控制电路和信号前置放大电路的集成电子部件的半导体材料的第一晶片; 在半导体材料的第二晶片的表面部分形成每个包括转子和定子的微致动器; 将第二晶片附接到第一晶片，其中第二晶片的表面部分面向第一晶片; 减薄第二片晶圆; 将第二晶片连接到第三晶片以获得复合晶片; 使第一片晶片变薄; 将复合晶片切割成连接到保护芯片的多个芯片; 去除保护芯片; 将读/写换能器附接到骰子; 并将骰子连接到用于硬盘驱动器的支撑块。

公开(公告)号：US06134088A

公开(公告)日：2000-10-17

申请号：US109117

申请日：1998-07-02

申请人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

发明人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33

CPC分类号： G11B5/3925 ,  G11B5/3183

摘要： An electromagnetic head for a storage device comprises a magnetic core forming a magnetic circuit, and a magnetoresistive means. The magnetic core is interrupted by an air-gap, thereby separating a first pole and second pole of the magnetic core. The magnetoresistive means is disposed in the region of the air-gap, and is connected to the magnetic core so as to be connected in the magnetic circuit.

摘要翻译： 用于存储装置的电磁头包括形成磁路的磁芯和磁阻装置。 磁芯被气隙中断，从而分离磁芯的第一极和第二极。 磁阻装置设置在气隙的区域中，并且与磁芯连接以便连接在磁路中。

公开(公告)号：US6069410A

公开(公告)日：2000-05-30

申请号：US538154

申请日：1995-10-02

申请人： Giovanni Degli Antoni ,  Roberto Bisiani ,  Bruno Murari

发明人： Giovanni Degli Antoni ,  Roberto Bisiani ,  Bruno Murari

IPC分类号： B60R25/04

CPC分类号： B60R25/04

摘要： An anti-tampering circuit for a vehicle includes an operational circuit providing a predetermined function for the vehicle to be protected, and a control circuit connected to the operational circuit for enabling and disabling operation thereof. The control circuit includes a semiconductor substrate, a communications circuit formed on the semiconductor substrate receiving data corresponding to an identification code from at least one external source within the vehicle, and a non-volatile memory formed on the semiconductor substrate and connected to the communications circuit for storing only once a predetermined identification code. The communications circuit writes the received data to the non-volatile memory as the predetermined identification code when the control circuit is within the vehicle if the predetermined identification code has not already been stored therein. The control circuit further includes a comparator formed on the substrate for comparing the received data with the predetermined identification code and providing a comparison signal. A selector is also formed on the substrate for enabling and disabling the operational circuit responsive to the comparison signal.

摘要翻译： 一种用于车辆的防篡改电路包括为待保护的车辆提供预定功能的操作电路，以及连接到该操作电路以用于使能和禁用其的操作的控制电路。 控制电路包括半导体衬底，形成在半导体衬底上的通信电路，其接收对应于来自车辆内的至少一个外部源的识别码的数据，以及形成在半导体衬底上并连接到通信电路的非易失性存储器 用于仅存储一次预定的识别码。 当控制电路在车内时，通信电路将所接收的数据作为预定识别码写入非易失性存储器，如果预定的识别码尚未存储在车辆内。 所述控制电路还包括形成在所述衬底上的比较所述接收数据与所述预定识别码并提供比较信号的比较器。 选择器也形成在基板上，用于响应于比较信号启用和禁用操作电路。

公开(公告)号：US5855693A

公开(公告)日：1999-01-05

申请号：US571806

申请日：1995-12-13

申请人： Bruno Murari ,  Flavio Villa ,  Ubaldo Mastromatteo

发明人： Bruno Murari ,  Flavio Villa ,  Ubaldo Mastromatteo

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L27/00 ,  H01L27/12 ,  H01L21/265

CPC分类号： H01L21/2007 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01074 ,  H01L2924/14

摘要： A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.

摘要翻译： 一种用于制造集成器件的半导体材料晶片，包括由包括由碳化硅，氮化硅和陶瓷材料组成的材料制成的中间绝缘层分隔的第一和第二单晶硅层的叠加层。 在中间层和第二硅层之间设置氧化物接合层。 通过在加热的真空室中在第一硅层上形成中间绝缘层来制造晶片; 沉积氧化层; 并叠加第二硅层。 当硅，绝缘材料，氧化物和硅层的堆叠被热处理时，氧化物反应以将绝缘层粘合到第二硅层。 作为陶瓷材料氧化铍，可以使用氮化铝，氮化硼和氧化铝。

公开(公告)号：US5280233A

公开(公告)日：1994-01-18

申请号：US842294

申请日：1992-02-26

申请人： Vanni Poletto ,  Marco Morelli ,  Bruno Murari

发明人： Vanni Poletto ,  Marco Morelli ,  Bruno Murari

IPC分类号： G05F1/56 ,  G05F1/569 ,  G05F1/59 ,  H02J9/06

CPC分类号： G05F1/59 ,  G05F1/569 ,  H02J9/061 ,  Y10T307/527 ,  Y10T307/625

摘要： A voltage regulator comprising a first power switch connected between the input terminal and output terminal; a storage condenser connected to the input terminal via a one-way switch; a second power switch connected between the condenser and the input terminal; and a regulating element connected to the output terminal and driving the power switches in such a manner as to maintain the output voltage constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device is provided between the regulating element and the switches for detecting the input voltage and the voltage of the condenser, and keeping both switches on as long as the input voltage is above two given thresholds, turning off the second switch when the input voltage is higher than the condenser voltage and below the first threshold, and turning off the first switch when the input voltage is lower than the condenser voltage and below the second threshold.

摘要翻译： 一种电压调节器，包括连接在输入端子和输出端子之间的第一电源开关; 存储电容器，其通过单向开关连接到所述输入端子; 连接在电容器和输入端子之间的第二电源开关; 以及连接到输出端子并且以保持输出电压恒定的方式驱动电源开关的调节元件。 为了更好地分配电力和热应力，通过减少由两个电源开关切换引起的干扰，提高了稳压器的可靠性和使用寿命，驱动装置设置在调节元件和开关之间，用于检测输入电压和电压 并且只要输入电压高于两个给定阈值就保持两个开关接通，当输入电压高于冷凝器电压并低于第一阈值时关闭第二开关，并且当第二开关断开时，关闭第一开关 输入电压低于电容电压，低于第二阈值。

公开(公告)号：US5105324A

公开(公告)日：1992-04-14

申请号：US518018

申请日：1990-05-02

申请人： Bruno Murari ,  Claudio Diazzi ,  Klaus Rischmuller

发明人： Bruno Murari ,  Claudio Diazzi ,  Klaus Rischmuller

IPC分类号： H01L23/62 ,  G05F1/10 ,  H02H3/10 ,  H02H3/22 ,  H02H9/04

CPC分类号： H02H9/04

摘要： A series of Zener diodes (25) and an electronic power switch, such as an IGBT (18), are connected across a power supply. A circuit including a resistor (20) in series on the electronic switch, a threshold device (36, 38) connected to the resistor and a ramp generator with multiplier (40, 42, 44, 46, FIG. 2) or a thermal sensor (50, 44, 46 FIG. 3) detect the energy level dissipated in the electronic power switch when a transient occurs when the level exceeds a present value, the circuit supplies an output signal to a monostable circuit (26, 28, 48) to drive the electronic power switch with low resistance conditions for a preset time starting from the occurrence of the output signal. Another threshold device, connected to a resistor (30, 32), preferably senses the instantaneous power dissipated in the electronic switch to control the monostable circuit when the instantaneous power is higher than a preset threshold.

公开(公告)号：US4682197A

公开(公告)日：1987-07-21

申请号：US812109

申请日：1985-12-23

申请人： Flavio Villa ,  Bruno Murari ,  Franco Bertotti ,  Aldo Torazzina ,  Fabrizio Stefani

发明人： Flavio Villa ,  Bruno Murari ,  Franco Bertotti ,  Aldo Torazzina ,  Fabrizio Stefani

IPC分类号： H01L21/8222 ,  H01L21/331 ,  H01L27/02 ,  H01L27/06 ,  H01L27/082 ,  H01L27/102 ,  H01L29/73 ,  H01L29/72 ,  H01L23/52 ,  H01L27/10 ,  H01L29/08

CPC分类号： H01L27/0211 ,  H01L27/1024

摘要： This integrated semiconductor device aims at drastic reduction of the direct secondary breakdown phenomena and has a plurality of side-by-side elementary transistors forming an interdigited structure. To reduce the thermal interaction between the elementary transistors, the latter are spaced apart from one another by a distance approximately equal to the width of one elementary transistor and are driven by current sources. Spacing apart reduces electrothermal interaction. Further, in order to minimize the device area requirements, the space between any two adjacent elementary transistors is made to accommodate drive transistors operating as current sources, or the elementary transistors of the complementary stage where the device forms a class B output stage, the two output transistors whereof are alternatively switched on.

摘要翻译： 该集成半导体器件旨在大大减少直接二次击穿现象，并且具有形成交叉结构的多个并排基本晶体管。 为了减小基本晶体管之间的热相互作用，后者彼此间隔开大约等于一个基本晶体管的宽度的距离，并由电流源驱动。 间距减少电热相互作用。 此外，为了最小化器件面积要求，使任何两个相邻基本晶体管之间的空间适合作为电流源工作的驱动晶体管，或者是器件形成B类输出级的补充级的基本晶体管， 输出晶体管交替接通。