公开(公告)号：US20050282080A1

公开(公告)日：2005-12-22

申请号：US10999416

申请日：2005-03-31

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: C08F8/44 ,  G03C1/492 ,  G03F7/038

CPC classification number: G03F7/0382 ,  C08F8/44

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

Abstract translation: 使用包含水的光致抗蚀剂组合物，具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案，使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环境友好的，并且在193nm和248nm处具有低吸光度，其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

公开(公告)号：US20050026076A1

公开(公告)日：2005-02-03

申请号：US10903076

申请日：2004-07-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/004 ,  C08F216/06 ,  C08F230/02 ,  G03C1/76 ,  G03F7/09

CPC classification number: C08F230/02 ,  C08F216/06 ,  G03F7/091

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

Abstract translation: 公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其被引入到光致抗蚀剂的顶部，其制备方法和抗反射涂层组合物，用于形成光致抗蚀剂超细图案的工艺 用于通过使用193nm ArF或157nm VUV光源进行光刻。 更具体地说，本发明提供了一种能够保护光致抗蚀剂不受胺的有机抗反射涂层聚合物，以提高后曝光延迟的稳定性，并且使图案化过程中由摆动现象引起的图案变形最小化，其制备方法和 抗反射涂料组合物。 [式I]其中m和n各自为5至5,000的整数。

公开(公告)号：US06818376B2

公开(公告)日：2004-11-16

申请号：US10120197

申请日：2002-04-09

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/111

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

Abstract translation: 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

公开(公告)号：US06753448B2

公开(公告)日：2004-06-22

申请号：US10330869

申请日：2002-12-26

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: C07C49205

CPC classification number: G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

Abstract: The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

Abstract translation: 本发明提供由式1a和1b'表示的化合物; 和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

公开(公告)号：US06627383B2

公开(公告)日：2003-09-30

申请号：US09973630

申请日：2001-10-09

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03C1492

CPC classification number: G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。

公开(公告)号：US06593446B1

公开(公告)日：2003-07-15

申请号：US09657069

申请日：2000-09-07

Applicant: Jae-Chang Jung ,  Keun-Kyu Kong ,  Min-Ho Jung ,  Sung-Eun Hong ,  Geun-Su Lee ,  Ki-Ho Baik

Inventor： Jae-Chang Jung ,  Keun-Kyu Kong ,  Min-Ho Jung ,  Sung-Eun Hong ,  Geun-Su Lee ,  Ki-Ho Baik

IPC: C08G600

CPC classification number: G03F7/091 ,  C08F212/08 ,  C08F216/38 ,  C08K5/42 ,  C08L25/08 ,  C08L29/14 ,  C08L33/066 ,  C09D125/08 ,  C09D129/14 ,  G03F7/0045 ,  G03F7/038 ,  C08L2666/04 ,  C08F2220/1808 ,  C08F212/14

Abstract: The present invention provides an organic anti-reflective film composition suitable for use in submicrolithography. The composition comprises a compound of chemical formula 11 and a compound of chemical formula 12. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein a, b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.

Abstract translation: 本发明提供适用于亚微光刻的有机抗反射膜组合物。 该组合物包含化学式11的化合物和化学式12的化合物。有机抗反射膜有效地吸收穿过抗反射膜顶部的光致抗蚀剂膜的光，从而大大降低了驻波效应。 使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中a，b，c，R'，R“ ，R1，R2，R3和R4是本文定义的那些。

公开(公告)号：US06582883B2

公开(公告)日：2003-06-24

申请号：US09891029

申请日：2001-06-25

Applicant: Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

Inventor： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC: G03C176

CPC classification number: G03F7/091 ,  C08F220/36 ,  C08F220/40 ,  C08F2220/281 ,  C08F2220/325

Abstract: An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.

Abstract translation: 具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。 包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并提高了产量。 另一个优点是能够控制k值。

公开(公告)号：US06531562B2

公开(公告)日：2003-03-11

申请号：US10146277

申请日：2002-05-14

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: C08F21800

CPC classification number: C08F32/08 ,  G03F7/0395

Abstract: The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

公开(公告)号：US06448352B1

公开(公告)日：2002-09-10

申请号：US09621068

申请日：2000-07-21

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: C08F2608

CPC classification number: C08F32/08 ,  G03F7/0395

Abstract: The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

Abstract translation: 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体包括胺官能团和酸不稳定保护基团，并且由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

公开(公告)号：US06265130B1

公开(公告)日：2001-07-24

申请号：US09302064

申请日：1999-04-29

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C07C59/46 ,  C07C57/26 ,  C07C59/80 ,  C07C69/608 ,  C07C69/732 ,  C07C69/738 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

Abstract: The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.

Abstract translation: 本发明涉及由化学式1表示的含羧基脂环族化合物：其中可以相同或不同的R1和R2表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。