Abstract:
A CMOS image sensor capable of improving characteristics of the image sensor by preventing damage to a photodiode region and a method for manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate on which a device isolation region and an active region are defined; a photodiode region formed at the active region; a conductive plug formed on the photodiode region for connecting the photodiode region to a metal wiring; and a transistor formed enclosing the conductive plug.
Abstract:
An LCD device and a manufacturing method thereof having improved transmittance and contrast ratio are disclosed.According to the LCD device and the manufacturing method thereof, a first common electrode which includes first and second horizontal electrode bars and a plurality of first vertical common electrode bars is disposed on a layer different from a second common electrode which includes a third horizontal common electrode bar and a plurality of second vertical common electrode bars. A pixel electrode which includes a horizontal pixel electrode bar and a plurality of vertical pixel electrode bars is disposed on the same layer as the second common electrode. The second common electrode is connected to the first common electrode.
Abstract:
A method of etching a carbon-containing layer, a method of forming a contact hole using the same, and a method of manufacturing a semiconductor device using the same, the method of etching a carbon-containing layer including forming a capping layer pattern on a carbon-containing layer to expose a portion of the carbon-containing layer, and plasma etching the exposed portion of the carbon-containing layer using an etching gas, wherein the etching gas includes oxygen gas and an inert gas, the inert gas being xenon gas or a gas mixture of xenon gas and argon gas.
Abstract:
An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, an interlayer dielectric, an interconnection, and a CuInGaSe2 (CIGS) image sensing device. The readout circuitry is disposed on a first substrate. The interlayer dielectric is disposed over the first substrate. The interconnection is in the interlayer dielectric and electrically connected to the readout circuitry. The CIGS image sensing device is disposed over the interconnection and electrically connected to the readout circuitry through the interconnection.
Abstract:
An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, a first interlayer dielectric with an interconnection therein, a second interlayer dielectric, an image sensing device, and a contact plug. The readout circuitry is formed in a first substrate. The first interlayer dielectric is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. The second interlayer dielectric is formed over the first interlayer dielectric. The image sensing device comprises a first laser annealed trench and is disposed over the second interlayer dielectric. The contact plug penetrates the first laser annealed trench and the second interlayer dielectric and electrically connects the image sensing device and the interconnection.
Abstract:
An organic/inorganic composite separator includes a porous substrate having a plurality of pores; and a porous coating layer formed on at least one surface of the porous substrate with a plurality of inorganic particles and a binder polymer. The binder polymer is a copolymer including: (a) a first monomer unit having a contact angle to a water drop in the range from 0° to 49°; and (b) a second monomer unit having a contact angle to a water drop in the range from 50° to 130°. This organic/inorganic composite separator has excellent thermal stability, so it may restrain an electric short circuit between a cathode and an anode. In addition, the separator may prevent inorganic particles in the porous coating layer from being extracted during an assembling process of an electrochemical device, thereby improving stability of an electrochemical device.
Abstract:
The present invention relates to a shoelace accessory provided to a shoelace to create an aesthetic appearance on the midfoot portion of a shoe while preventing the shoelace from being loosened, by preventing respective ornamental elements, threaded on the shoelace, from being moved or deformed. The shoelace is inserted through pairs of eyelets of an eyestay provided to the midfoot portion of a shoe so that the shoelace can be tightened and loosened to allow the shoe to be secured around a wearer's foot in conformity with a size of the foot, ornamental elements are threaded on the shoelace such that they are respectively placed between the respective pairs of eyelets and are positioned side by side in a rearward direction so as to independently or cooperatively provide an aesthetic appearance, and stoppers are integrally formed on surfaces of the ornamental elements.
Abstract:
Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.
Abstract:
Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.
Abstract:
A thermal image forming apparatus includes a platen roller and a thermal printhead. A heating portion of the thermal printhead has a plurality of heating elements arranged along an area where the platen roller and the thermal printhead form a printing nip. A plurality of driving integrated circuits are mounted on a substrate and connected to the heating elements of the heating portion. A block is formed higher than the driving integrated circuits such that the driving integrated circuits are disposed between the block and the heating portion. A conveying unit is disposed toward the heating portion of the thermal printhead and conveys a sheet of paper between the platen roller and the thermal printhead.