Abstract:
High quality dielectric layers may be achieved without introducing excessive impurities when a semiconductor device is manufactured by a method that includes forming a lower wire layer on a structure above a semiconductor substrate, forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure, implanting carbon and oxygen (e.g., CO2) into the silicon rich oxide (SRO) layer, and forming an organosilicate glass layer by heat-treating the implanted SRO layer.
Abstract:
The present invention relates to a siloxane monomer containing a trifluorovinylether group and a sol-gel hybrid polymer prepared using the monomer, more particularly to siloxane monomer with novel structure prepared by reacting alkoxychlorosilane with a Grignard reagent containing a trifluorovinylether (—OC2F3) group, a method of preparing the same and a sol-gel hybrid polymer containing a perfluorocyclobutane (PFCB) group prepared from sol-gel reaction using said siloxane monomer containing a trifluorovinylether group.
Abstract:
A method for formation of a copper diffusion barrier film using aluminum is disclosed. In the method, thin aluminum (Al) film is deposited on a dielectric, and a surface of the deposited aluminum film is plasma treated with NH3, thereby transforming the surface of the plasma treated aluminum film into a nitride film basically composed of aluminum nitride (AlxNy), and an aluminum film is deposited on the surface of the transformed aluminum nitride film, and copper is deposited on the surface of the deposited aluminum film. Therefore, because the diffusion of copper is suppressed, the problem that leakages between metal lines increase as pitches between the metals decrease due to high integration of parts of semiconductor can be settled.
Abstract translation:公开了一种使用铝形成铜扩散阻挡膜的方法。 在该方法中,在电介质上沉积薄铝(Al)膜,并且用NH 3等离子体处理沉积的铝膜的表面,从而将等离子体处理的铝膜的表面转化为基本上由氮化铝构成的氮化物膜 Al x N y),并且在转化的氮化铝膜的表面上沉积铝膜,并且在沉积的铝膜的表面上沉积铜。 因此,由于铜的扩散被抑制,所以能够解决金属线之间的泄漏由于半导体部件的高度集成而使金属之间的间距减小的问题。
Abstract:
This invention discloses a planarization method for semiconductor device. The planarization method includes the steps of: providing a semiconductor substrate in which metal patterns are formed with various pattern densities; depositing a porous oxide layer over the semiconductor substrate so as to cover the metal patterns; plasma-treating surface of the porous oxide layer; and polishing the plasma-treated porous oxide layer by chemical mechanical polishing.
Abstract:
In one embodiment, the antenna arrangement includes a primary antenna having a conductive sidewall; and a loop antenna disposed in and physically separated from the primary antenna. The loop antenna includes a first conductive loop and a capacitor electrically connected between ends of the first conductive loop.
Abstract:
A housing of a mobile device including a frame defining a perimeter of the mobile device, the frame including a first metal material and configured to operate as a first antenna for a first wireless communication, and a cover configured to cover one surface of the mobile device, the cover including a second metal material, and the cover and at least a portion of the frame configured to operate as a second antenna for a second wireless communication may be provided.
Abstract:
Provided are a blue-light-emitting iridium complex, an iridium complex monomer, a phosphorescent polymer, and an organic electroluminescent device using same. The blue-light-emitting iridium complex contains a ligand having a low electron density structure, such as triazole or tetrazole. The iridium complex monomer containing a ligand having a polymerizable vinyl group produces a blue phosphorescent polymer through the polymerization with carbazole derivatives. The organic electroluminescent device comprises a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode, wherein the light-emitting layer contains the above-described iridium complex or polymer containing the iridium complex.
Abstract:
Disclosed herein is a first example of effective direct position specific C—H arylation of thieno[3,4-b]pyrazine derivative and several hetero aryl bromide under the ‘Heck-type’ experiment condition using Pd(OAc)2/n-Bu4NBr as a catalyst system, thienopyrazine in which aryl is replaced to increase various values. The current synthesis methodology is a simpler method than a facial method and is used to prepare π-conjugated oligomer and/or polymer material based on interesting hexylthiophen and thienopyrazine portion for electronic industries which construct a new synthetic organic material using potential application programs. The arylation generates more position selectivity in a C—H bond than in a pyrazine C—H bond. The optical and electrical characteristics of the synthesis copolymer are survey.
Abstract:
Provided are a sulfonated poly(arylene ether) copolymer including a crosslinking structure and a polyelectrolyte membrane including the same. Particularly, a sulfonated poly(arylene ether) copolymer including a crosslinking structure in a polymer chain or at the terminal portion of the polymer chain, and a polyelectrolyte membrane including the same are provided. The polyelectrolyte membrane using the sulfonated poly(arylene ether) copolymer including the crosslinking structure, may have the same or better degree of a thermal stability, a mechanical stability, a chemical stability, a membrane forming capability, etc. than a commonly used polyelectrolyte membrane. In addition, the proton conductivity and the cell performance of the polyelectrolyte membrane may be remarkably improved than those of the commonly used polymer electrolyte. Further, the properties of the electrolyte membrane may be rarely changed, and a high measuring stability may be obtainable. The polyelectrolyte membrane may be used in a fuel cell or a secondary battery.
Abstract:
An anionic polymerization method for styrene derivative containing pyridine as functional group is provided. The method includes forming a complex of (vinylphenyl)-pyridine and lithium chloride and performing anionic polymerization. Accordingly, a polymer of styrene derivative containing pyridine can be obtained. The polymer has excellent optical properties, and its molecular weight and molecular weight distribution can be controlled.