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    Sulfonated poly(arylene ether) having crosslinkable moiety combined in chain of polymer, sulfonated poly(arylene ether) having crosslinkable moieties combined in polymer and at polymer end group, and polymer electrolyte membrane using sulfonated poly(arylene ether)
    3.
    发明授权
    Sulfonated poly(arylene ether) having crosslinkable moiety combined in chain of polymer, sulfonated poly(arylene ether) having crosslinkable moieties combined in polymer and at polymer end group, and polymer electrolyte membrane using sulfonated poly(arylene ether) 失效
    在聚合物链中结合有可交联部分的磺化聚（亚芳基醚），在聚合物和聚合物端基中结合有可交联部分的磺化聚（亚芳基醚）和使用磺化聚（亚芳基醚）的聚合物电解质膜，

    公开(公告)号：US08487070B2

    公开(公告)日：2013-07-16

    申请号：US12246495

    申请日：2008-10-06

    申请人： Jae-Suk Lee ,  Myung-Hwan Jeong ,  Kwan-Soo Lee ,  Eun-Seon Park ,  Young-Mu Joe

    发明人： Jae-Suk Lee ,  Myung-Hwan Jeong ,  Kwan-Soo Lee ,  Eun-Seon Park ,  Young-Mu Joe

    IPC分类号： C08G75/00

    CPC分类号： H01B1/122 ,  C08G65/4006 ,  C08G65/4012 ,  C08G65/4056 ,  C08G65/48 ,  C08G75/23 ,  C08G2650/60 ,  C08L2205/05 ,  H01M8/1025 ,  H01M8/1027 ,  H01M8/1032 ,  H01M8/1034 ,  H01M8/1037 ,  H01M8/1039 ,  H01M8/1072 ,  H01M2300/0082 ,  Y02P70/56

    摘要： A sulfonated poly(arylene ether) copolymer that has a crosslinking structure in a chain of a polymer, a sulfonated poly(arylene ether) copolymer that has a crosslinking structure in and at an end of a chain of a polymer, and a polymer electrolyte film that is formed by using them are disclosed. According to the polycondensation reaction of the sulfonated dihydroxy monomer (HO—SAr1-OH), the none sulfonated dihydroxy monomer (HO—Ar—OH), the crosslinkable dihalide monomer (X—CM-X) and the none sulfonated dihalide monomer (X—Ar—X), the poly(arylene ether) copolymer in which the sulfonic acid is included is synthesized. The formed poly(arylene ether) copolymer has the crosslinkable structure in the chain of the polymer. In addition, by carrying out the polycondensation reaction in respects to the crosslinkable monohydroxy monomer or the crosslinkable monohalide monomer, the crosslinking can be formed at the end of the polymer. Through this, the thermal stability, the mechanical stability, the chemical stability, the film formation ability and the like is the same as or better than those of the Nafion film that is currently commercialized and is used as the polymer electrolyte film, and the proton conductivity and the cell performance are excessively improved. In addition, even though it is exposed to the moisture over a long period of time, since there is no change in the property of the electrolyte film, the dimensional stability is high.

    摘要翻译： 在聚合物链中具有交联结构的磺化聚（亚芳基醚）共聚物，在聚合物链中具有交联结构并在其末端的磺化聚（亚芳基醚）共聚物和聚合物电解质膜 公开了使用它们形成的。 根据磺化二羟基单体（HO-SAr1-OH）的缩聚反应，无磺化二羟基单体（HO-Ar-OH），交联二卤化物单体（X-CM-X）和无磺化二卤化物单体 -Ar-X），其中包含磺酸的聚（亚芳基醚）共聚物被合成。 形成的聚（亚芳基醚）共聚物在聚合物链中具有可交联结构。 此外，通过对可交联单羟基单体或可交联单卤酸酯单体进行缩聚反应，可以在聚合物的末端形成交联。 由此，热稳定性，机械稳定性，化学稳定性，成膜能力等与目前商品化并用作聚合物电解质膜的Nafion膜相同或更好，质子 导电性和电池性能过度改善。 此外，即使长时间暴露于水分，由于电解质膜的性质没有变化，因此尺寸稳定性高。

    ANIONIC POLYMERIZATION METHOD FOR STYRENE DERIVATIVE CONTAINING PYRIDINE AS FUNCTIONAL GROUP
    4.
    发明申请
    ANIONIC POLYMERIZATION METHOD FOR STYRENE DERIVATIVE CONTAINING PYRIDINE AS FUNCTIONAL GROUP 失效
    含有吡啶衍生物的苯乙烯衍生物作为官能团的阴离子聚合方法

    公开(公告)号：US20090203861A1

    公开(公告)日：2009-08-13

    申请号：US12335693

    申请日：2008-12-16

    申请人： Jae-Suk Lee ,  Nam-Goo Kang

    发明人： Jae-Suk Lee ,  Nam-Goo Kang

    IPC分类号： C08F4/48 ,  C08G73/00 ,  C08F4/46

    CPC分类号： C08F4/48 ,  C08F297/00 ,  C08F212/14 ,  C08F220/10 ,  C08F12/32 ,  C08F12/26

    摘要： An anionic polymerization method for styrene derivative containing pyridine as functional group is provided. The method includes forming a complex of (vinylphenyl)-pyridine and lithium chloride and performing anionic polymerization. Accordingly, a polymer of styrene derivative containing pyridine can be obtained. The polymer has excellent optical properties, and its molecular weight and molecular weight distribution can be controlled.

    摘要翻译： 提供了含吡啶作为官能团的苯乙烯衍生物的阴离子聚合方法。 该方法包括形成（乙烯基苯基） - 吡啶和氯化锂的络合物并进行阴离子聚合。 因此，可以得到含有吡啶的苯乙烯衍生物的聚合物。 聚合物具有优异的光学性能，并且可以控制其分子量和分子量分布。

    Synthesis of Vinylphenylpyridine and Living Anionic Polymerization
    5.
    发明申请
    Synthesis of Vinylphenylpyridine and Living Anionic Polymerization 失效
    乙烯基苯基吡啶和阴离子聚合的合成

    公开(公告)号：US20090105416A1

    公开(公告)日：2009-04-23

    申请号：US12227140

    申请日：2007-04-03

    申请人： Jae-Suk Lee ,  Nam-Goo Kang

    发明人： Jae-Suk Lee ,  Nam-Goo Kang

    IPC分类号： C07D213/06 ,  C08F26/06 ,  C08L39/04 ,  C08F4/50

    CPC分类号： C07D213/16 ,  C08F26/06 ,  C08F112/32 ,  C08F212/08 ,  C08F293/005 ,  C08F212/32

    摘要： Provided are a vinyl-biphenylpyridine monomer and a polymer thereof. More particularly, the present invention provides a vinyl-biphenylpyridine monomer having a side chain of pyridine or phenylpyridine as a functional group, a homopolymer of which molecular weight and molecular weight distribution are controlled using the monomer, and a block copolymer of which molecular structure and molecular weight are controlled to facilitate synthesis of an organic metal complex. Accordingly, the present invention provides a vinyl-biphenylpyridine monomer and a polymer thereof which are effectively used as nano and optical functional materials.

    摘要翻译： 提供了乙烯基 - 联苯基吡啶单体及其聚合物。 更具体地说，本发明提供了具有吡啶或苯基吡啶作为官能团的侧链的乙烯基联苯基吡啶单体，使用该单体控制分子量和分子量分布的均聚物，以及分子结构和 控制分子量以促进有机金属络合物的合成。 因此，本发明提供了有效地用作纳米和光学功能材料的乙烯基 - 联苯基吡啶单体及其聚合物。

    Semiconductor Devices and Methods for Manufacturing the Same
    6.
    发明申请
    Semiconductor Devices and Methods for Manufacturing the Same 失效
    半导体器件及其制造方法

    公开(公告)号：US20080277791A1

    公开(公告)日：2008-11-13

    申请号：US12178577

    申请日：2008-07-23

    申请人： Jae-Suk Lee

    发明人： Jae-Suk Lee

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

    摘要翻译： 公开了具有铜线层的半导体器件及其制造方法。 所示的半导体器件包括具有接触孔的镶嵌绝缘层，包含第一钌层，氧化钌层和第二钌层的阻挡金属层，形成在阻挡金属层上的种子铜层，以及铜线层 由Cu-Ag-Au固溶体制成。 公开的制造半导体器件的示例性方法减少和/或防止阻挡金属层与硅衬底或镶嵌绝缘层的接触特性劣化。 此外，通过形成由Cu-Ag-Au固溶体制成的铜线层，可以提高长期的器件可靠性。

    Method for manufacturing semiconductor device
    7.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07300862B2

    公开(公告)日：2007-11-27

    申请号：US11125602

    申请日：2005-05-09

    申请人： Jae-Suk Lee

    发明人： Jae-Suk Lee

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76825 ,  H01L21/76801

    摘要： High quality dielectric layers may be achieved without introducing excessive impurities when a semiconductor device is manufactured by a method that includes forming a lower wire layer on a structure above a semiconductor substrate, forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure, implanting carbon and oxygen (e.g., CO2) into the silicon rich oxide (SRO) layer, and forming an organosilicate glass layer by heat-treating the implanted SRO layer.

    摘要翻译： 当半导体器件通过包括在半导体衬底上的结构上形成下导线层的方法制造半导体器件时，可以实现高质量的电介质层，形成折射率为0.45-1.55的富硅氧化物层在 下层导线层和结构，将碳和氧（例如CO 2）注入富硅氧化物（SRO）层中，并通过热处理植入的SRO层形成有机硅酸盐玻璃层。

    Metal interconnection lines of semiconductor devices and methods of forming the same
    8.
    发明申请
    Metal interconnection lines of semiconductor devices and methods of forming the same 有权
    半导体器件的金属互连线及其形成方法

    公开(公告)号：US20050127510A1

    公开(公告)日：2005-06-16

    申请号：US11009723

    申请日：2004-12-10

    申请人： Jae-Suk Lee

    发明人： Jae-Suk Lee

    IPC分类号： H01L21/28 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

    CPC分类号： H01L21/76852 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

    摘要： Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.

    摘要翻译： 公开了半导体器件的金属互连线及其形成方法。 通过防止金属层侵蚀并防止金属线由于电迁移（EM）和应力迁移（SM）而被破坏，在半导体器件的公开的金属线中实现了提高的可靠性。 所示的金属互连线包括：半导体衬底; 衬底上的金属图案; 金属图案下的胶水图案; 金属图案上的抗反射图案; 以及围绕金属图案的侧壁的虚拟图案。

    Vinyl-phenyl pyridine monomers and polymers prepared thereform
    9.
    发明授权
    Vinyl-phenyl pyridine monomers and polymers prepared thereform 有权
    乙烯基 - 苯基吡啶单体和由其制备的聚合物

    公开(公告)号：US06660821B2

    公开(公告)日：2003-12-09

    申请号：US10366395

    申请日：2003-02-14

    申请人： Jae-Suk Lee ,  Jun-Hwan Ahn ,  Young-Sun Cho ,  Nam-Goo Kang ,  Hye-Kyong Lee

    发明人： Jae-Suk Lee ,  Jun-Hwan Ahn ,  Young-Sun Cho ,  Nam-Goo Kang ,  Hye-Kyong Lee

    IPC分类号： C08F12606

    CPC分类号： C07D213/06 ,  C08F12/32

    摘要： The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic.

    摘要翻译： 本发明涉及乙烯基苯基单体和由其制备的聚合物。 更具体地说，本发明提供由式（1）表示的乙烯基苯基单体，它们由于苯基的共振作用和改变的特性而能够进行各种聚合，如自由基聚合，阳离子聚合，阴离子聚合和金属茂催化聚合 因此，适合于通过与具有光学特性的金属组分形成络合物而合成可用于光功能材料的通用聚合物。

    BLUE-LIGHT-EMITTING IRIDIUM COMPLEX, IRIDIUM COMPLEX MONOMER, PHOSPHORUS POLYMER, AND ORGANIC ELECTROLUMINESCENCE DEVICE USING SAME
    10.
    发明申请
    BLUE-LIGHT-EMITTING IRIDIUM COMPLEX, IRIDIUM COMPLEX MONOMER, PHOSPHORUS POLYMER, AND ORGANIC ELECTROLUMINESCENCE DEVICE USING SAME 有权
    蓝色发光二极管复合物，复合单体，磷光聚合物和有机电致发光器件

    公开(公告)号：US20120138917A1

    公开(公告)日：2012-06-07

    申请号：US13389697

    申请日：2010-08-10

    申请人： Jae-Suk Lee ,  Nam-Goo Kang

    发明人： Jae-Suk Lee ,  Nam-Goo Kang

    IPC分类号： H01L51/54 ,  C08F230/04 ,  C07F15/00

    CPC分类号： C07F15/004 ,  C07F15/0033 ,  C08F130/04 ,  C08F220/36 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/1059 ,  C09K2211/1466 ,  C09K2211/185

    摘要： Provided are a blue-light-emitting iridium complex, an iridium complex monomer, a phosphorescent polymer, and an organic electroluminescent device using same. The blue-light-emitting iridium complex contains a ligand having a low electron density structure, such as triazole or tetrazole. The iridium complex monomer containing a ligand having a polymerizable vinyl group produces a blue phosphorescent polymer through the polymerization with carbazole derivatives. The organic electroluminescent device comprises a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode, wherein the light-emitting layer contains the above-described iridium complex or polymer containing the iridium complex.

    摘要翻译： 提供蓝色发光铱络合物，铱络合物单体，磷光聚合物和使用其的有机电致发光器件。 蓝色发光铱络合物包含具有低电子密度结构的配体，例如三唑或四唑。 含有可聚合乙烯基的配体的铱络合物单体通过与咔唑衍生物的聚合产生蓝色磷光聚合物。 有机电致发光器件包括第一电极，第二电极和介于第一电极和第二电极之间的发光层，其中发光层含有上述铱络合物或含有铱络合物的聚合物。