RFID tag and method receiving RFID tag signal
    2.
    发明授权
    RFID tag and method receiving RFID tag signal 有权
    RFID标签和方法接收RFID标签信号

    公开(公告)号:US08659394B2

    公开(公告)日:2014-02-25

    申请号:US13093254

    申请日:2011-04-25

    IPC分类号: H04Q5/22 H04L5/12 H03D3/02

    CPC分类号: G06K19/07771 H04Q2213/095

    摘要: Provided are a Radio Frequency IDentification (RFID) tag with a signal reception method. The RFID tag includes a demodulator that receives a read signal containing read data. The demodulator includes; a voltage generating circuit that provides a first voltage signal and a second voltage signal derived from the received read signal, an inverter that provides a data pulse signal indicative of the read data by inverting the second voltage signal using an inverting voltage defined in relation to the first voltage signal, and a buffer that recovers the read data by buffering the data pulse signal.

    摘要翻译: 提供了具有信号接收方法的射频识别(RFID)标签。 RFID标签包括接收包含读取数据的读取信号的解调器。 解调器包括: 电压产生电路,其提供从所接收的读取信号导出的第一电压信号和第二电压信号;反相器,其通过使用相对于所述读取信号定义的反相电压来反转所述第二电压信号来提供指示所述读取数据的数据脉冲信号 第一电压信号和通过缓冲数据脉冲信号来恢复读取数据的缓冲器。

    INTERNAL VOLTAGE GENERATING CIRCUIT AND SMART CARD
    3.
    发明申请
    INTERNAL VOLTAGE GENERATING CIRCUIT AND SMART CARD 有权
    内部电压产生电路和智能卡

    公开(公告)号:US20120318875A1

    公开(公告)日:2012-12-20

    申请号:US13523518

    申请日:2012-06-14

    IPC分类号: G05F3/02 G06K19/073

    摘要: An internal voltage generating circuit includes a first voltage application unit, a second voltage application unit, a first regulator, a second regulator, and a controller. The first and second voltage application units respectively provide a first voltage and a second voltage. The controller generates a bulk voltage, a first control signal, and a second control signal from the first and second voltages. The first regulator is enabled or disabled according to the first control signal and generates and outputs the first internal voltage based on the bulk voltage, the first voltage, and a first reference voltage. The second regulator is enabled or disabled according to the second control signal and generates and outputs the second internal voltage based on the bulk voltage, the second voltage, and a second reference voltage.

    摘要翻译: 内部电压产生电路包括第一电压施加单元,第二电压施加单元,第一调节器,第二调节器和控制器。 第一和第二电压施加单元分别提供第一电压和第二电压。 控制器从第一和第二电压产生体电压,第一控制信号和第二控制信号。 第一调节器根据第一控制信号被使能或禁止,并且基于体电压,第一电压和第一参考电压产生并输出第一内部电压。 第二调节器根据第二控制信号被使能或禁止,并且基于体电压,第二电压和第二参考电压产生并输出第二内部电压。

    STRUCTURE FOR REALIZING INTEGRATED CIRCUIT HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    STRUCTURE FOR REALIZING INTEGRATED CIRCUIT HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME 有权
    用于实现具有肖特基二极管的集成电路的结构及其制造方法

    公开(公告)号:US20080096361A1

    公开(公告)日:2008-04-24

    申请号:US11963354

    申请日:2007-12-21

    IPC分类号: H01L21/20

    CPC分类号: H01L29/872 H01L27/0788

    摘要: An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

    摘要翻译: 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括:衬底,其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层,使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层,使得第二导电层与第一导电层和电介质层一起形成电容器。 因此,当在整流电路中使用集成电路结构时,可以减小整个电路的尺寸。

    Oscillator tuning system and oscillator tuning method
    6.
    发明申请
    Oscillator tuning system and oscillator tuning method 有权
    振荡器调谐系统和振荡器调谐方法

    公开(公告)号:US20080055091A1

    公开(公告)日:2008-03-06

    申请号:US11651576

    申请日:2007-01-10

    IPC分类号: G08B13/14 H04Q5/22

    摘要: An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.

    摘要翻译: 提供振荡器调谐系统和振荡器调谐方法。 该系统包括确定单元,其确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及频率调谐器,其根据确定的结果来调谐RFID振荡器的驱动频率。 该方法包括确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及根据所述确定的结果调整所述RFID振荡器的驱动频率。

    RFID tag and RFID system having the same
    7.
    发明申请
    RFID tag and RFID system having the same 审中-公开
    RFID标签和RFID系统具有相同的功能

    公开(公告)号:US20070139290A1

    公开(公告)日:2007-06-21

    申请号:US11489634

    申请日:2006-07-20

    IPC分类号: H01Q1/50 G08B13/14 H01Q9/16

    CPC分类号: H01Q1/2216

    摘要: A radio frequency identification tag (RFID) that extends a read range of an RFID reader, and an RFID system including the RFID tag. The RFID tag includes a tag antenna, an IC, and a bonding part electrically connecting the tag antenna to the IC. A complex conjugate of an impedance of the tag antenna is a value obtained by adding an impedance of the IC to an impedance of the bonding part. Thus, the RFID tag can achieve accurate impedance matching between the tag antenna and the bonding, smoothly perform data communication with the RFID reader, and extend the read range of the RFID reader.

    摘要翻译: 扩大RFID读取器的读取范围的射频识别标签(RFID)和包括RFID标签的RFID系统。 RFID标签包括标签天线,IC,以及将标签天线与IC电连接的接合部。 标签天线的阻抗的复共轭是通过将IC的阻抗与接合部的阻抗相加而获得的值。 因此,RFID标签可以实现标签天线与接合之间的精确阻抗匹配,平滑地执行与RFID读取器的数据通信,并且扩展RFID读取器的读取范围。

    Ultra-low power limiter
    9.
    发明申请
    Ultra-low power limiter 失效
    超低功率限幅器

    公开(公告)号:US20060198197A1

    公开(公告)日:2006-09-07

    申请号:US11360615

    申请日:2006-02-24

    IPC分类号: G11C11/34 G11C16/06

    CPC分类号: H03K19/00315 H03K17/08128

    摘要: An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.

    摘要翻译: 过电压保护电路(即限幅器)包括:具有多个半导体元件的第一开关块,它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块,其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时,通过使漏电流最小化,并且当输入电压高于参考电压时使漏电流最大化,当输入电压低于参考电压时,限幅器可防止过大的电流流入RF标签电路 电压,并且确保当输入电压低于参考电压时,足够量的电流被提供给调节器。

    MEMS RF-switch using semiconductor
    10.
    发明申请
    MEMS RF-switch using semiconductor 失效
    使用半导体的MEMS射频开关

    公开(公告)号:US20060012940A1

    公开(公告)日:2006-01-19

    申请号:US11179460

    申请日:2005-07-13

    IPC分类号: H01L21/683

    CPC分类号: H01H59/0009 H01H2059/0018

    摘要: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

    摘要翻译: 提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。 本发明的MEMS RF开关包括:耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层,并且当从所述电源施加偏置信号时,形成电位势垒以变得绝缘; 以及第二电极,设置在距离半导体层预定距离处,并且耦合到电源的另一个端子,其中当从电源施加偏置信号时,第二电极接触半导体层。 因此,尽管偏置信号可能不会被切断,但自由电子和空穴在半导体层中重新结合,从而可以防止电荷积累和粘附。