公开(公告)号：US09086190B2

公开(公告)日：2015-07-21

申请号：US13695844

申请日：2011-03-16

申请人： Toshinobu Furusho ,  Takahiro Ookubo ,  Kousuke Yoshihara ,  Yusuke Yamamoto ,  Steffen Hornig

发明人： Toshinobu Furusho ,  Takahiro Ookubo ,  Kousuke Yoshihara ,  Yusuke Yamamoto ,  Steffen Hornig

IPC分类号： B05C5/00 ,  F17D1/00 ,  H01L21/67 ,  B05C9/06

CPC分类号： B05D1/02 ,  B01D29/56 ,  B01D35/02 ,  B05C9/06 ,  B05C11/10 ,  F17D1/00 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67178 ,  Y10T137/794

摘要： A chemical supply system comprises: a first container and a second container for storing a chemical solution; a first pump, located on a first pipe connecting the first and second containers, for directing the solution stored in the first container to the second container; and a first filter, located in the first pipe, for filtering the solution flowing through the first pipe from the first container toward the second container. The system further includes: a second pipe for connecting the first container and the second container; and a second pump, located on the second pipe, for directing the solution stored in the second container to the first container.

摘要翻译： 化学品供应系统包括：第一容器和用于储存化学溶液的第二容器; 第一泵，位于连接第一和第二容器的第一管上，用于将存储在第一容器中的溶液引导到第二容器; 以及位于第一管道中的第一过滤器，用于将从第一容器流过第一管道的溶液过滤到第二容器。 该系统还包括：用于连接第一容器和第二容器的第二管; 以及位于第二管上的用于将存储在第二容器中的溶液引导到第一容器的第二泵。

公开(公告)号：US08980013B2

公开(公告)日：2015-03-17

申请号：US13486084

申请日：2012-06-01

申请人： Kousuke Yoshihara ,  Yuichi Yoshida ,  Taro Yamamoto

发明人： Kousuke Yoshihara ,  Yuichi Yoshida ,  Taro Yamamoto

IPC分类号： B08B3/08 ,  G03F7/16 ,  B08B3/02 ,  G03F7/30 ,  H01L21/67

CPC分类号： G03F7/168 ,  B08B3/024 ,  G03F7/3021 ,  H01L21/67051

摘要： A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

摘要翻译： 一种基板清洗方法，其特征在于，包括：在基板保持件持续旋转的同时，将基板上的清洗液的排出位置变更为偏离基板的中心部的偏心位置， 气体从气体喷嘴排出到基板的中心部分，以便在从清洗液喷嘴输出的清洗液流的边缘之间的最短距离的条件下形成清洁液体的干燥区域 并且从气体喷嘴输出的气流的边缘被设定在9mm和15mm之间。

公开(公告)号：US08956694B2

公开(公告)日：2015-02-17

申请号：US12904458

申请日：2010-10-14

申请人： Hirofumi Takeguchi ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

发明人： Hirofumi Takeguchi ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

IPC分类号： B05D3/12 ,  G03C5/29 ,  G03F7/30

CPC分类号： G03F7/3021

摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

摘要翻译： 在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分 形成一个纯净的水坑。 将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。 显影剂部分地溶解抗蚀剂膜并产生溶液。 晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。 然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

公开(公告)号：US08304018B2

公开(公告)日：2012-11-06

申请号：US12703236

申请日：2010-02-10

申请人： Koji Takayanagi ,  Tomohiro Iseki ,  Katsunori Ichino ,  Kousuke Yoshihara

发明人： Koji Takayanagi ,  Tomohiro Iseki ,  Katsunori Ichino ,  Kousuke Yoshihara

IPC分类号： B05D3/12

CPC分类号： B05D1/005 ,  G03F7/162 ,  H01L21/6715

摘要： There is provided a coating method which can efficiently apply a coating liquid, such as a liquid resist, to the entire surface of a wafer even when the coating liquid is supplied in a smaller amount than a conventional one, and can therefore reduce the consumption of the coating liquid. The coating method includes: a first step of rotating the substrate at a first rotating speed while supplying the coating liquid onto approximately the center of the rotating substrate; a second step of rotating the substrate at a second rotating speed which is lower than the first rotating speed; a third step of rotating the substrate at a third rotating speed which is higher than the second rotating speed; and a fourth step of rotating the substrate at a fourth rotating speed which is higher than the second rotating speed and lower than the third rotating speed.

摘要翻译： 提供一种能够有效地将涂布液（例如液体抗蚀剂）施加到晶片的整个表面的涂布方法，即使当以比常规涂布液更少的量供给涂布液时，也可以减少 涂布液体。 涂布方法包括：第一步骤，在将涂布液提供到旋转基板的大致中心的同时以第一旋转速度旋转基板; 第二步骤，以低于第一转速的第二转速旋转衬底; 第三步骤，以比第二转速高的第三转速旋转衬底; 以及第四步骤，以比第二转速高且低于第三转速的第四转速旋转衬底。

公开(公告)号：US20120234362A1

公开(公告)日：2012-09-20

申请号：US13486084

申请日：2012-06-01

申请人： Kousuke Yoshihara ,  Yuichi Yoshida ,  Taro Yamamoto

发明人： Kousuke Yoshihara ,  Yuichi Yoshida ,  Taro Yamamoto

IPC分类号： B08B7/04 ,  B08B3/02 ,  B08B5/02

CPC分类号： G03F7/168 ,  B08B3/024 ,  G03F7/3021 ,  H01L21/67051

摘要： A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

摘要翻译： 一种基板清洗方法，其特征在于，包括：在基板保持件持续旋转的同时，将基板上的清洗液的排出位置变更为偏离基板的中心部的偏心位置， 气体从气体喷嘴排出到基板的中心部分，以便在从清洗液喷嘴输出的清洗液流的边缘之间的最短距离的条件下形成清洁液体的干燥区域 并且从气体喷嘴输出的气流的边缘被设定在9mm和15mm之间。

公开(公告)号：US08262300B2

公开(公告)日：2012-09-11

申请号：US13025300

申请日：2011-02-11

申请人： Yasushi Takiguchi ,  Taro Yamamoto ,  Hiroshi Arima ,  Kousuke Yoshihara ,  Yuichi Yoshida

发明人： Yasushi Takiguchi ,  Taro Yamamoto ,  Hiroshi Arima ,  Kousuke Yoshihara ,  Yuichi Yoshida

IPC分类号： G03B13/00 ,  G03D5/00

CPC分类号： G03B27/52 ,  G03F7/3021 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/68742 ,  H01L21/68785

摘要： A coating and developing apparatus develops a substrate of which surface is coated with resist and exposed to lights. The coating and developing apparatus includes a developing module; a cleaning module; and a transfer mechanism configured to transfer a substrate developed by the developing module to the cleaning module. The developing module includes an airtightly sealed processing vessel configured to form a processing atmosphere; a temperature control plate provided in the processing vessel and mounts thereon the substrate and cools the substrate; and an atmosphere gas supply unit configured to supply an atmosphere gas including mist of a developing solution to a surface of the substrate within the processing vessel. The cleaning module includes a mounting table configured to mount thereon the substrate; and a cleaning solution supply unit configured to supply a cleaning solution to the substrate mounted on the mounting table.

摘要翻译： 涂层和显影设备开发其表面被抗蚀剂涂覆并暴露于光的基底。 涂料和显影装置包括显影模块; 清洁模块; 以及传送机构，其构造成将由显影模块显影的基板传送到清洁模块。 显影模块包括构造成形成处理气氛的气密密封处理容器; 设置在处理容器中并安装在其上的温度控制板并冷却基板; 以及气氛气体供给单元，被构造成将处理容器内的显影液的气雾气体气体供给至基板的表面。 清洁模块包括：安装台，其安装在其上; 以及清洗液供给单元，其构造成将清洗液供给到安装在所述安装台上的基板。

公开(公告)号：US08147153B2

公开(公告)日：2012-04-03

申请号：US12913420

申请日：2010-10-27

申请人： Hirofumi Takeguchi ,  Junji Nakamura ,  Kousuke Yoshihara

发明人： Hirofumi Takeguchi ,  Junji Nakamura ,  Kousuke Yoshihara

IPC分类号： G03D5/00 ,  G03C1/00

CPC分类号： G03D5/00 ,  B08B3/04 ,  H01L21/67051

摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).

摘要翻译： 本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。 漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑 （步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂 基底与冲洗液一起（步骤7）。

公开(公告)号：US20120057862A1

公开(公告)日：2012-03-08

申请号：US13221072

申请日：2011-08-30

申请人： Shinichi HAYASHI ,  Yuichi Douki ,  Akira Miyata ,  Yuuichi Yamamoto ,  Kousuke Yoshihara ,  Nobuaki Matsuoka ,  Suguru Enokida

发明人： Shinichi HAYASHI ,  Yuichi Douki ,  Akira Miyata ,  Yuuichi Yamamoto ,  Kousuke Yoshihara ,  Nobuaki Matsuoka ,  Suguru Enokida

IPC分类号： G03D5/00

CPC分类号： H01L21/6715 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67745

摘要： A process block is formed by arranging a heating-process related block on the side of a carrier block, a group of liquid-process related unit blocks, and a heating block on the side of an interface block, in this order from the side of the carrier block to the side of the interface block. The group of liquid-process related unit blocks is composed of: a group of unit blocks for coating films that is formed by stacking upward a unit block for an antireflection film, a unit block for a resist film, and a unit bock for an upper layer film, in this order; and unit blocks for developing that are stacked on one another in the up and down direction with respect to the group of unit blocks for coating films. Liquid process modules of each of the liquid-process related unit blocks are arranged on the right and left sides of a transfer path for a substrate.

摘要翻译： 通过在接口块的侧面上的载体块，一组液体处理相关单元块和加热块的侧面上布置加热处理相关块来形成处理块，从 载波块到接口块的一侧。 一组液相处理相关单元块由以下组成：一组用于涂覆膜的单元块，其通过向上堆叠用于抗反射膜的单元块，用于抗蚀剂膜的单元块和用于上部的单元块 层膜，按顺序; 以及用于显影的单元块相对于用于涂膜的单元块组在上下方向上彼此堆叠。 每个液体处理相关单元块的液体处理模块布置在用于基板的传送路径的右侧和左侧。

公开(公告)号：US08069816B2

公开(公告)日：2011-12-06

申请号：US11950122

申请日：2007-12-04

申请人： Taro Yamamoto ,  Kousuke Yoshihara

发明人： Taro Yamamoto ,  Kousuke Yoshihara

IPC分类号： B05C11/02 ,  B05C11/00 ,  B05B7/06 ,  G03D5/00

CPC分类号： H01L21/6715 ,  G03F7/70341 ,  H01L21/67051

摘要： A coating film processing method is used for processing a coating film formed on a surface of a substrate to prepare for an immersion light exposure process arranged to perform light exposure through a liquid. The method includes supplying a solvent-containing liquid comprising a combination of a solvent and a solvent-ability decreasing agent for decreasing solvent ability, or a diluted solvent, onto an edge portion of the coating film, thereby performing edge portion cutting; and supplying a cleaning liquid onto the edge portion of the coating film, thereby performing edge portion cleaning, subsequently to the edge portion cutting.

摘要翻译： 使用涂膜处理方法来处理形成在基板的表面上的涂膜，以准备用于通过液体进行曝光的浸没曝光处理。 该方法包括将包含溶剂和溶剂能力降低剂的组合的含溶剂的液体或稀释的溶剂供应到涂膜的边缘部分上，从而进行边缘部分切割; 并将清洗液供给到涂膜的边缘部分上，从而进行边缘部分的清洁。

公开(公告)号：US08043657B2

公开(公告)日：2011-10-25

申请号：US11851747

申请日：2007-09-07

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The present invention supplies a solvent to the front surface of a substrate while rotating the substrate. Subsequently, the substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at the first number of rotations. Thereafter, the substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, in application of the resist solution by spin coating, the consumption of the resist solution can be suppressed, and a high in-plane uniformity can be obtained for the film thickness of the resist film.

摘要翻译： 本发明在旋转衬底的同时向衬底的前表面提供溶剂。 随后，基板被加速旋转到第一转数，并且在加速旋转和第一转数旋转期间，将抗蚀剂溶液供应到基板的中心部分。 此后，基板减速旋转到第二转数，在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。 然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。 根据本发明，通过旋涂的抗蚀剂溶液的应用，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。