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    High-purity large-volume monocrystals that are especially radiation-resistant and method of making them from crystal
    71.
    发明申请
    High-purity large-volume monocrystals that are especially radiation-resistant and method of making them from crystal 审中-公开
    特别是耐辐射的高纯度大容量单晶及其制造方法

    公开(公告)号：US20090297430A1

    公开(公告)日：2009-12-03

    申请号：US12539795

    申请日：2009-08-12

    Applicant: Andreas Weisleder ,  Matthias Mueller ,  Joerg Kandler ,  Andreas Menzel ,  Rainer Guett

    Inventor： Andreas Weisleder ,  Matthias Mueller ,  Joerg Kandler ,  Andreas Menzel ,  Rainer Guett

    IPC: C01F11/22 ,  C01F5/28

    CPC classification number: C30B11/00 ,  C30B29/12

    Abstract: The high-purity alkaline earth halide crystals, especially CaF2, BaF2 or MgF2 crystals, have a diffuse scatter distribution function value of less than 7×10−7, an RMS uniformity of refractive index of less than 15×10−8 after subtraction of Zernike coefficients and an RMS value of birefringence in the (111) direction of less than 0.2 nm/cm. Preferably the crystals exhibit a loss coefficient of less than 5×10−4 cm−1 after irradiation with 10×109 laser pulses with an energy density of 10 mJ/cm2 at a wavelength of 193 nm. Also they have RMS birefringence in the (100) direction or the (111) direction that is less than 0.35 nm/cm.

    Abstract translation: 高纯度碱土卤化物晶体，特别是CaF 2，BaF 2或MgF 2晶体具有小于7×10 -7的漫射散射分布函数值，减去Zernike系数后的折射率RMS均匀度小于15×10 -8， （111）方向的双折射的RMS值小于0.2nm / cm。 优选地，在193nm的能量密度为10mJ / cm 2的10×10 9个激光脉冲照射之后，晶体表现出小于5×10 -4 cm -1的损耗系数。 此外，它们在（100）方向或（111）方向上具有小于0.35nm / cm的RMS双折射。

    Device with a screw plug and a range of devices
    72.
    发明授权
    Device with a screw plug and a range of devices 有权
    带螺丝的设备和各种设备

    公开(公告)号：US07624618B2

    公开(公告)日：2009-12-01

    申请号：US10487688

    申请日：2002-07-09

    Applicant: Antonius Bader ,  Matthias Mueller ,  Heinrich Bolz ,  Heinrich Zimmermann

    Inventor： Antonius Bader ,  Matthias Mueller ,  Heinrich Bolz ,  Heinrich Zimmermann

    IPC: G01L23/22

    CPC classification number: F16H57/0408 ,  F01M11/0408 ,  F16B33/004 ,  F16B35/00 ,  F16B35/041 ,  F16B35/06 ,  F16B43/001 ,  G01H1/00

    Abstract: A device having at least one screw plug for screwing into a first tapped hole of a housing or housing part of the device, the at least one screw plug including a device for sealing, such as a sealing ring, for the connection to the housing in a manner forming a seal, e.g., against the escape of oil. Introduced into the screw plug is a second tapped hole by which a sensor is releasably connectable, e.g., is able to be screwed in. The screw plug includes an end stop for conducting acoustical waves and for the simultaneous mechanical limit for screwing in the screw plug.

    Abstract translation: 一种具有至少一个用于旋入设备的壳体或壳体部分的第一螺纹孔的螺钉的装置，所述至少一个螺塞包括用于密封的装置，例如密封环，用于与壳体的连接 形成密封的方式，例如防止油的逸出。 插入螺塞中的是第二个螺纹孔，传感器可通过该孔被可释放地连接，例如可以被拧入。螺塞包括用于传导声波的端部止动件以及用于螺旋塞住的同时的机械极限 。

    Method for producing a monocrystalline or polycrystalline semiconductore material
    75.
    发明申请
    Method for producing a monocrystalline or polycrystalline semiconductore material 有权
    用于制造单晶或多晶半导体材料的方法

    公开(公告)号：US20090158993A1

    公开(公告)日：2009-06-25

    申请号：US12334646

    申请日：2008-12-15

    Applicant: Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

    Inventor： Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

    IPC: C30B11/06

    CPC classification number: C30B11/003 ,  C30B11/04 ,  C30B29/06 ,  Y10T117/10

    Abstract: The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.

    Abstract translation: 本发明涉及通过定向凝固制造单晶或多晶半导体材料的方法，其中将块状半导体原料引入熔融坩埚中并在其中熔融并定向凝固，特别是使用垂直梯度冷冻法。 为了防止污染和损坏，半导体原料从熔融坩埚的上端熔化。 熔融材料向下流动，使得尚未熔化的半导体原料在熔融坩埚中逐渐下降。 在这种情况下，附加的半导体原料从熔化坩埚从上方补充到尚未熔化或不完全熔化的半导体原料区域上，以至少部分地补偿半导体原料的体积收缩 材料并增加坩埚的填充水平。 为了尽可能少地减少熔化时间并影响系统中的热条件，通过有目的地将热量引导到低于半导体原料的熔​​融温度的温度来加热待补充的半导体原料 并以加热状态引入容器。

    METHOD FOR PRODUCING MONOCRYSTALLINE METAL OR SEMI-METAL BODIES
    77.
    发明申请
    METHOD FOR PRODUCING MONOCRYSTALLINE METAL OR SEMI-METAL BODIES 审中-公开
    生产单晶金属或半金属体的方法

    公开(公告)号：US20090047203A1

    公开(公告)日：2009-02-19

    申请号：US12191807

    申请日：2008-08-14

    Applicant: Matthias Mueller ,  Uwe Sahr

    Inventor： Matthias Mueller ,  Uwe Sahr

    IPC: C01B33/00 ,  C30B11/14

    CPC classification number: C30B11/14 ,  C30B29/06

    Abstract: The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape.According to the invention, the entire bottom of the melting crucible is completely covered with a thin seed crystal plate made of the monocrystalline semi-metal or metal. Throughout the procedure, the bottom of the melting crucible is kept below the melting temperature of the semi-metal or metal in order to prevent melting of the seed crystal plate.Monocrystalline ingots produced in this way are distinguished by a low average dislocation density of for example less than 105 cm−2, allowing the production of very efficient monocrystalline Si solar cells.

    Abstract translation: 本发明涉及使用垂直梯度冷冻（VGF）法通过在具有多边形基本形状的熔化坩埚中熔体的定向凝固来生产大体积单晶金属或半金属体，特别是单晶Si锭。 根据本发明，熔融坩埚的整个底部完全被由单晶半金属或金属制成的薄晶种板覆盖。 在整个过程中，熔融坩埚的底部保持低于半金属或金属的熔化温度，以防止晶种板熔化。 以这种方式生产的单晶锭的特征在于低平均位错密度例如小于105cm -2，允许生产非常有效的单晶Si太阳能电池。

    Process for producing an electrical contact
    79.
    发明申请
    Process for producing an electrical contact 审中-公开
    制造电接点的方法

    公开(公告)号：US20060108334A1

    公开(公告)日：2006-05-25

    申请号：US11228343

    申请日：2005-09-19

    Applicant: Klaus Frietsch ,  Matthias Mueller ,  Karlheinz Storz ,  Richard Hettich ,  Tobias Woelfle

    Inventor： Klaus Frietsch ,  Matthias Mueller ,  Karlheinz Storz ,  Richard Hettich ,  Tobias Woelfle

    IPC: B23K26/34

    CPC classification number: H01H11/041 ,  H01H2011/0087

    Abstract: The invention relates to a process for producing an electrical contact, in which a coating that provides the contact is applied to a carrier by means of laser welding, such that a pulsed laser is employed as the coating material is introduced, in at least one laser pulse draw. The operating parameters are so selected that during the welding process the temperature in the welding area oscillates around the melting point, specifically in such a way that the melt alternately liquefies and again solidifies.

    Abstract translation: 本发明涉及一种用于制造电接触的方法，其中通过激光焊接将提供接触的涂层施加到载体上，使得在至少一个激光器中引入脉冲激光作为涂层材料 脉冲绘制 操作参数如此选择，使得在焊接过程中焊接区域中的温度围绕熔点振荡，特别是使得熔体交替液化并再次固化。

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