公开(公告)号：US07414881B2

公开(公告)日：2008-08-19

申请号：US11547123

申请日：2005-03-24

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

IPC分类号： G11C11/00

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F13/00 ,  H01F41/303 ,  H01L43/08

摘要： A magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.

摘要翻译： 一种用于控制具有第一至第三铁磁层（11-13）和第一和第二非磁性层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法， （21,22），而不耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。

公开(公告)号：US20080094880A1

公开(公告)日：2008-04-24

申请号：US11661205

申请日：2005-08-26

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.

摘要翻译： 磁阻元件包括置于自由层和固定层之间的自由层，固定层和非磁性层。 自由层具有第一磁性层，第二磁性层，第三磁性层，介于第一磁性层和第二磁性层之间的第一非磁性层，以及介于第二磁性层之间的第二非磁性层 和第三磁性层。 第一磁性层，第二磁性层和第三磁性层被耦合，使得自发磁化具有螺旋结构。

公开(公告)号：US07301829B2

公开(公告)日：2007-11-27

申请号：US10541645

申请日：2003-12-26

申请人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi

发明人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi

IPC分类号： G11C5/14

CPC分类号： G11C11/15

摘要： A semiconductor memory device in which information is written into a storage element by flowing current. The semiconductor memory device has a shortened write speed and reduced power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The semiconductor memory device includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by the constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.

摘要翻译： 通过流动电流将信息写入存储元件的半导体存储器件。 通过防止寄生电容器延长写入电流达到预定值所需的时间，半导体存储器件具有缩短的写入速度和降低的功耗。 半导体存储器件包括用于存储信息的存储元件，用于通过流动电流将信息写入存储元件的恒定电流源，以及当恒定电流源流过的电流达到的时间的用于对寄生电容器充电的升压电路 在与存储元件相关的预定位置处将信息写入存储元件所需的电流量。

公开(公告)号：US07292471B2

公开(公告)日：2007-11-06

申请号：US11384920

申请日：2006-03-20

申请人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

发明人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

IPC分类号： G11C11/15

CPC分类号： G11C13/004 ,  G11C7/06 ,  G11C11/16 ,  G11C11/1673 ,  G11C13/0061 ,  G11C2013/0047 ,  G11C2013/0054 ,  G11C2013/0057 ,  G11C2207/066

摘要： By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register to one another. By the use of the VCO, the integrating capacitor for the current or the generation of a reference pulse may be eliminated.

摘要翻译： 通过第一读出，来自所选单元的电流输入由前置放大器和VCO转换成与当前值成反比的频率的脉冲，并且通过计数器5对预设时间间隔内的脉冲数进行计数，以便 存储在读出值寄存器中。 然后将选定的单元写入两个存储状态之一，然后执行第二次读出。 通过将存储在读出值寄存器中的第一次读出的计数值和存储在参考值寄存器中的参考值彼此进行比较来验证所选单元的存储状态。 通过使用VCO，可以消除用于电流或产生参考脉冲的积分电容器。

公开(公告)号：US20070201168A1

公开(公告)日：2007-08-30

申请号：US11547123

申请日：2005-03-24

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

IPC分类号： G11B5/33

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F13/00 ,  H01F41/303 ,  H01L43/08

摘要： There is provided a magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.

摘要翻译： 提供了一种用于控制具有第一至第三铁磁层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法，以及第一和第二非铁磁层 - 磁性层（21,22），其间没有耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。

公开(公告)号：US07099184B2

公开(公告)日：2006-08-29

申请号：US10523198

申请日：2003-07-28

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura ,  Kaoru Mori

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura ,  Kaoru Mori

IPC分类号： G11C11/00 ,  G11C17/00

CPC分类号： G11C11/16

摘要： An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.

摘要翻译： 改进的磁随机存取存储器（MRAM）具有两组信号线，每组信号线基本上垂直于另一组信号线，存储器单元位于信号线的交点处。 每个存储单元具有包含磁化层的磁阻元件，该磁化层的磁特性根据施加的磁场的强度而变化。 可以通过向与该单元相交的信号线提供适当的写入电流而将期望的磁场施加到任何单元。 公开了施加的磁场，两个不同阈值函数值之间的关系，以及在每个单元处产生的四个不同的磁场。 更好的性能，即提高选择性和更稳定的写入操作，结果。

公开(公告)号：US06678187B2

公开(公告)日：2004-01-13

申请号：US10046811

申请日：2002-01-15

申请人： Tadahiko Sugibayashi ,  Noboru Sakimura ,  Takeshi Honda

发明人： Tadahiko Sugibayashi ,  Noboru Sakimura ,  Takeshi Honda

IPC分类号： G11C1100

CPC分类号： G11C11/16

摘要： A semiconductor memory apparatus using tunnel magnetic resistance elements comprises a plurality of cell arrays. When data is read from a cell in one of the cell array, a word line connected to the cell is connected to a voltage source, a bit line connected to the cell is connected to an input of a sense amplifier, word lines in the cell array concerned except for the word line connected to the cell and bit lines in the cell array concerned except for the bit line connected to the cell are isolated. A subtracter subtracts an offset current which is generated in another cell array from a current flowing from the bit line connected the cell. An integrator integrates the result of the subtraction. A comparator, a read current value register, and a reference value register performs self-reference reading method on the result of the integration.

摘要翻译： 使用隧道磁阻元件的半导体存储器件包括多个单元阵列。 当从单元阵列之一中的单元读取数据时，连接到单元的字线连接到电压源，连接到单元的位线连接到读出放大器的输入端，单元中的字线 除了连接到单元的字线和除了连接到单元的位线之外的单元阵列中的位线之外，阵列被隔离。 减法器从从连接单元的位线流出的电流中减去在另一个单元阵列中产生的偏移电流。 积分器整合减法的结果。 比较器，读取电流值寄存器和参考值寄存器对积分的结果执行自参考读取方法。