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    Magnetic random access memory
    1.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US07099184B2

    公开(公告)日：2006-08-29

    申请号：US10523198

    申请日：2003-07-28

    申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura ,  Kaoru Mori

    发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura ,  Kaoru Mori

    IPC分类号： G11C11/00 ,  G11C17/00

    CPC分类号： G11C11/16

    摘要： An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.

    摘要翻译： 改进的磁随机存取存储器（MRAM）具有两组信号线，每组信号线基本上垂直于另一组信号线，存储器单元位于信号线的交点处。 每个存储单元具有包含磁化层的磁阻元件，该磁化层的磁特性根据施加的磁场的强度而变化。 可以通过向与该单元相交的信号线提供适当的写入电流而将期望的磁场施加到任何单元。 公开了施加的磁场，两个不同阈值函数值之间的关系，以及在每个单元处产生的四个不同的磁场。 更好的性能，即提高选择性和更稳定的写入操作，结果。

    Magnetic random access memory
    2.
    发明申请
    Magnetic random access memory 有权

    公开(公告)号：US20060098477A1

    公开(公告)日：2006-05-11

    申请号：US10523198

    申请日：2003-07-28

    申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura

    发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura ,  Hisao Matsutera ,  Atsushi Kamijo ,  Kenichi Shimura

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetic random access memory is composed of a plurality of first signal lines provided to extend in a first direction, a plurality of second signal lines provided to extend in a second direction substantially perpendicular to the first direction, a plurality of memory cells respectively provided at the intersections of the plurality of first signal lines and the plurality of second signal lines, and a plurality of magnetic structures respectively provided to the plurality of memory cells. Each of the plurality of memory cells has a magneto-resistance element containing a spontaneous magnetization layer which has a first threshold function, and the direction of the spontaneous magnetization of the spontaneous magnetization layer is reversed when an element applied magnetic field having the intensity equal to or larger than a first threshold function value is applied. Each of the plurality of magnetic structures has a second threshold function, and generates a magnetic structure magnetic field in response to a structure-applied magnetic field. When the structure-applied magnetic field has the intensity equal to or larger than the second threshold function value, a third magnetic field is generated as the magnetic structure magnetic field. When the structure applied magnetic field has the intensity less than the second threshold function value, a fourth magnetic field is generated which is weaker than the third magnetic field as the magnetic structure magnetic field. A first write current supplied to one of the plurality of first signal lines as a first selected signal line, and a first magnetic field is generated. A second write current is supplied to one of the plurality of second signal lines as a second selected signal line, and a second magnetic field is generated. A first synthetic magnetic field of the first magnetic field and the second magnetic field is applied to the magnetic structure as the structure applied magnetic field. The element applied magnetic field having the intensity equal to or larger than the first threshold function value is applied to the selected memory cell provided at the intersection of the first selected signal line and the second selected signal line. A second synthetic magnetic field of the first synthetic magnetic field and the magnetic structure magnetic field is generated as the element applied magnetic field such that the element applied magnetic field having the intensity less than the first threshold function value is applied to each of non-selected memory cells other than the selected memory cell.

    Magneto-resistance effect type composite head and production method thereof
    3.
    发明授权
    Magneto-resistance effect type composite head and production method thereof 有权
    磁阻效应型复合头及其制造方法

    公开(公告)号：US06333842B1

    公开(公告)日：2001-12-25

    申请号：US09204222

    申请日：1998-12-03

    申请人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

    发明人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element including: a center region including a ferromagnetic tunnel junction magneto-resistance effect film (hereinafter, referred to as a TMR film) having: a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in a an almost vertical direction between the first and the second magnetic shields; and a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for applying a bias magnetic field to the center region.

    摘要翻译： 本发明提供磁阻效应（以下称为MR）型复合头。 头部包括：再现头，包括布置在第一和第二磁屏蔽之间的MR元件; 以及记录头，其布置在再现头旁边，以便使用第二磁屏蔽作为第一磁极膜，并具有通过磁隙与第一磁极相对的第二磁极膜; MR元件包括：包括铁磁隧道结磁阻效应膜（以下称为TMR膜）的中心区域，其具有：第一铁磁层和第二铁磁层，用于产生使用第一和/ 第二磁屏蔽作为电极，使得电流在第一和第二磁屏蔽之间沿几乎垂直的方向流动; 以及设置在所述第一和第二铁磁层之间的隧道势垒层; 以及端部区域，布置成从两侧夹着中心区域，以向中心区域施加偏置磁场。

    Magneto-resistive element and magnetic head for data writing/reading
    10.
    发明授权
    Magneto-resistive element and magnetic head for data writing/reading 有权
    用于数据写入/读取的磁阻元件和磁头

    公开(公告)号：US06490139B1

    公开(公告)日：2002-12-03

    申请号：US09492229

    申请日：2000-01-27

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967

    摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

    摘要翻译： 磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。