公开(公告)号：US08828856B2

公开(公告)日：2014-09-09

申请号：US13980873

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/22 ,  C23C16/00 ,  H01L27/32 ,  C23C14/04 ,  C23C14/56 ,  H01L51/56

CPC classification number: H01L27/3295 ,  C23C14/042 ,  C23C14/56 ,  H01L27/3211 ,  H01L27/3276 ,  H01L27/3283 ,  H01L51/56 ,  H01L2227/323

Abstract: Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).

Abstract translation: 提供了通过使用包括具有喷射孔（86）的气相沉积源（85）的蒸镀装置（50）形成蒸镀部的TFT基板（10）。 和具有开口（82）的气相沉积掩模（81），通过蒸镀掩模沉积气相沉积颗粒以形成气相沉积部分。 TFT基板（10）包括像素区域（AG）二维排列的像素。 以及电连接到各个像素的导线（14）。 气相沉积部分（Q）在它们之间形成有间隙（X），并且具有设置在间隙（X）中的各个端子的导线（14）。

公开(公告)号：US20140010957A1

公开(公告)日：2014-01-09

申请号：US14004894

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC: C23C16/448

CPC classification number: C23C16/448 ,  C23C14/042 ,  C23C14/243 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle emitting device (30) includes a hollow rotor (40) provided with a first and a second nozzle sections (50 and 60), a rolling mechanism, and heat exchangers (52 and 62), and when the rolling mechanism causes the rotor (40) to rotate, the heat exchangers (52 and 62) switch between cooling and heating in accordance with placement of the nozzle section so that that one of the nozzle sections which faces outward has a temperature lower than a temperature at which vapor deposition material turns into gas and the other nozzle section has a temperature equal to or higher than the temperature at which the vapor deposition material turns into the gas.

Abstract translation: 气相沉积粒子发射装置（30）包括设置有第一和第二喷嘴部分（50和60），滚动机构和热交换器（52和62）的中空转子（40），并且当滚动机构引起 转子（40）旋转，热交换器（52和62）根据喷嘴部分的放置而在冷却和加热之间切换，使得面向外的喷嘴部分之一的温度低于蒸气 沉积材料变成气体，另一个喷嘴部分的温度等于或高于气相沉积材料变成气体的温度。

公开(公告)号：US08618568B2

公开(公告)日：2013-12-31

申请号：US13259378

申请日：2010-04-08

Applicant: Tomoya Aoyama ,  Kohei Yokoyama ,  Rena Tsuruoka ,  Hideki Uchida ,  Toru Sonoda ,  Satoshi Inoue

Inventor： Tomoya Aoyama ,  Kohei Yokoyama ,  Rena Tsuruoka ,  Hideki Uchida ,  Toru Sonoda ,  Satoshi Inoue

IPC: H01L33/00

CPC classification number: H01L51/0013 ,  C23C14/048 ,  H01L51/56

Abstract: In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.

Abstract translation: 在本发明的实施方式的发光装置的制造方法中，具有包括开口部的反射层的第一基板的一个面，形成在反射层上的光吸收层覆盖反射层的开口部 形成在所述光吸收层上并且在与所述反射层中的所述开口重叠的位置处的凹槽以及形成在所述保护层上方的材料层和所述第二基板的沉积表面上的保护层设置成彼此面对， 从第一基板的另一表面侧进行光照射，从而在第二基板的沉积表面上与反射层中的开口重叠的区域中形成EL层。

公开(公告)号：US20130340680A1

公开(公告)日：2013-12-26

申请号：US14004151

申请日：2012-03-05

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/02

CPC classification number: H01L51/0011 ,  C23C14/24 ,  C23C14/243 ,  C23C14/564 ,  H01L21/02104 ,  H01L51/001 ,  H01L51/56

Abstract: The vapor deposition particle injecting device (20) includes a crucible (22), a holder (21) having at least one injection hole (21a), and plate members (23 through 25) provided in the holder (21). The plate members (23 through 25) have respective openings (23a through 25a) corresponding to the injection hole (21a), and the plate members (23 through 25) are arranged away from each other in a direction perpendicular to the opening planes of the openings. The injection hole (21a) and the openings (23a through 25a) overlap each other in the plan view.

Abstract translation: 气相沉积粒子注入装置（20）包括坩埚（22），具有至少一个注入孔（21a）的保持器（21）和设置在保持器（21）中的板构件（23至25）。 板构件（23至25）具有与喷射孔（21a）相对应的相应的开口（23a至25a），并且板构件（23至25）在与 开口 注射孔（21a）和开口（23a至25a）在平面图中彼此重叠。

公开(公告)号：US20130323882A1

公开(公告)日：2013-12-05

申请号：US13985281

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

IPC: H01L51/56 ,  H01L51/50

CPC classification number: H01L51/5012 ,  B05D1/60 ,  C23C14/042 ,  C23C14/243 ,  C23C14/542 ,  C23C14/564 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).

Abstract translation: 气相沉积粒子注入装置（30）包括气相沉积粒子产生部分（41），由中间喷嘴部分（51），气相沉积粒子发射喷嘴部分（61）和热交换器 43，63，53）。 气相沉积粒子发射喷嘴部分（61）被控制在低于气相沉积材料变成气体的温度的温度。 同时，中间喷嘴部（51）由热交换器（53）控制，处于蒸镀微粒生成部（41）的温度与蒸镀微粒发射喷嘴部的温度 61）。

公开(公告)号：US20130295716A1

公开(公告)日：2013-11-07

申请号：US13980037

申请日：2012-01-04

Applicant: Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

Inventor： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC: H01L51/00

CPC classification number: H01L51/0008 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/243 ,  H01L51/001 ,  H01L51/56

Abstract: First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) of a limiting plate unit (80), pass through mask opening (71) of a vapor deposition mask (70) and adhere to a substrate (10) so as to form a coating film. If regions on the substrate to which the first vapor deposition particles and the second vapor deposition particles adhere if the vapor deposition mask is assumed not to exist are respectively denoted by a first region (92a) and a second region (92b), the limiting plate unit limits the directionalities of the first vapor deposition particles and the second vapor deposition particles in a first direction (10a) that travel to the substrate such that the second region is contained within the first region. Accordingly, it is possible to form a light emitting layer with a doping method by using vapor deposition by color.

Abstract translation: 从第一和第二气相沉积源开口（61a，61b）排出的第一和第二蒸镀颗粒（91a，91b）穿过限制板单元（80）的第一和第二限制开口（82a，82b），通过掩模开口 （70）的表面（71）并粘附到基底（10）上以形成涂膜。 如果假设不存在气相沉积掩模，则第一气相沉积颗粒和第二气相沉积颗粒附着的基板上的区域分别由第一区域（92a）和第二区域（92b）表示，限制板 单元限制第一气相沉积颗粒和第二气相沉积颗粒在向基板移动的第一方向（10a）上的方向性，使得第二区域包含在第一区域内。 因此，可以通过使用通过颜色的气相沉积形成具有掺杂方法的发光层。

公开(公告)号：US20130285038A1

公开(公告)日：2013-10-31

申请号：US13979845

申请日：2012-01-12

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/50

CPC classification number: H01L51/5036 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3276 ,  H01L51/001 ,  H01L51/0011 ,  H01L2227/323

Abstract: On the TFT substrate (10), a vapor deposition layer is formed by use of a vapor deposition device (50) which includes (i) a vapor deposition source (85) having injection holes (86) and (ii) a vapor deposition mask (81) having openings (82) through which vapor deposition particles injected from the injection holes (86) are deposited so as to form the vapor deposition layer. The TFT substrate (10) has a plurality of pixels two-dimensionally arranged in a pixel region (AG), and terminals of a plurality of wires (14), which are electrically connected with the plurality of pixels, are gathered outside a vapor deposition layer formation region.

Abstract translation: 在TFT基板（10）上，通过使用蒸镀装置（50）形成蒸镀层，该蒸镀装置包括：（i）具有喷射孔（86）的蒸镀源（85）和蒸镀掩模 （81），其具有开口（82），沉积从喷射孔（86）喷射的气相沉积颗粒以形成气相沉积层。 TFT基板（10）具有像素区域（AG）二维排列的多个像素，并且与多个像素电连接的多根电线（14）的端子聚集在气相沉积 层形成区域。

公开(公告)号：US20130260501A1

公开(公告)日：2013-10-03

申请号：US13993677

申请日：2011-12-14

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/00

CPC classification number: H01L51/56 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/5253 ,  H05B33/04 ,  H05B33/10

Abstract: A vapor deposition device (50) in accordance with the present invention includes: a vapor deposition source (80) which has a plurality of injection holes (81) from which vapor deposition particles are to be injected towards a film formation substrate (60); a plurality of pipes (83a and 83b); a vapor deposition source crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80); and moving means for moving the film formation substrate (60) relative to the vapor deposition source (80). The pipes (83a and 83b) are connected to first and second sides of the vapor deposition source (80) on one end side and the other end side, respectively, of a line of the injection holes (81).

Abstract translation: 根据本发明的气相沉积装置（50）包括：气相沉积源（80），其具有多个喷射孔（81），气相沉积颗粒将从该注入孔向成膜基底（60）注入; 多个管道（83a和83b）; 用于将气相沉积颗粒供应到气相沉积源（80）的蒸镀源坩埚（82）; 以及用于相对于气相沉积源（80）移动成膜衬底（60）的移动装置。 管道（83a和83b）分别在喷射孔（81）的一行的一端侧和另一端侧连接到气相沉积源（80）的第一和第二侧。

公开(公告)号：US20130260499A1

公开(公告)日：2013-10-03

申请号：US13992613

申请日：2011-12-07

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/00

CPC classification number: H01L51/0008 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/568 ,  H01L27/3211 ,  H01L51/56

Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), including: a vapor deposition source (91) which has a plurality of injection holes (92) from which vapor deposition particles are to be injected towards the film formation substrate (60), the plurality of injection holes (92) being arranged in a line or in a plurality of lines; a vapor deposition crucible (93) for supplying the vapor deposition particles to the vapor deposition source (91) via a pipe (94), the pipe being connected to the vapor deposition source (91) on a side where one end of the line(s) of the plurality of injection holes (92) is located; moving means for moving the film formation substrate (60) relative to the vapor deposition source(s) (91); and a rotation mechanism (100) for rotating the vapor deposition source (91).

Abstract translation: 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，包括：具有多个喷射孔（92）的蒸镀源（91） 从该气相沉积粒子向成膜基板（60）喷射，多个喷射孔（92）以一行或多条线排列; 一种用于通过管道（94）将气相沉积颗粒供应到气相沉积源（91）的气相沉积坩埚（93），该管道连接到气相淀积源（91）的一端 （92）的位置; 用于相对于气相沉积源（91）移动成膜衬底（60）的移动装置; 以及用于旋转气相沉积源（91）的旋转机构（100）。

公开(公告)号：US20130252364A1

公开(公告)日：2013-09-26

申请号：US13989704

申请日：2011-12-15

Applicant: Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

Inventor： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC: H01L51/56

CPC classification number: H01L51/56 ,  C23C14/044 ,  C23C14/12 ,  C23C14/562 ,  C23C16/45578 ,  H01L27/3244 ,  H01L51/0011

Abstract: A vapor deposition source (60), a limiting plate unit (80), and a vapor deposition mask (70) are disposed in this order. The limiting plate unit includes a plurality of limiting plates (81) disposed along a first direction. At least a portion of surfaces (83) defining a limiting space (82) of the limiting plate unit and surfaces (84) of the limiting plate unit opposing the vapor deposition source is constituted by at least one outer surface member (110, 120) capable of attaching to and detaching from a base portion (85). Accordingly, a vapor deposition device that is capable of forming a coating film in which edge blur is suppressed on a large-sized substrate and that has excellent maintenance performance can be obtained.

Abstract translation: 依次设置气相沉积源（60），限制板单元（80）和气相沉积掩模（70）。 限位板单元包括沿着第一方向设置的多个限位板（81）。 限定板单元的限制空间（82）的表面的至少一部分和与气相沉积源相对的限制板单元的表面（84）由至少一个外表面构件（110,120）构成， 能够附接到基部（85）并从基部（85）脱离。 因此，可以获得能够形成在大尺寸基板上抑制边缘模糊并且具有优异的维护性能的涂膜的蒸镀装置。