公开(公告)号：US20120056187A1

公开(公告)日：2012-03-08

申请号：US13211700

申请日：2011-08-17

申请人： Byoung-Keon PARK ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Byoung-Keon PARK ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L27/32 ,  H01L29/786 ,  H01L21/205

CPC分类号： H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

摘要翻译： 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US20110312135A1

公开(公告)日：2011-12-22

申请号：US13067407

申请日：2011-05-31

申请人： Seung-Kyu Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Seung-Kyu Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/78609 ,  H01L29/78675

摘要： A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.

摘要翻译： 一种使硅层结晶的方法和制造TFT的方法，包括在衬底上形成催化剂金属层的硅层结晶的方法; 在催化剂金属层上形成催化剂金属封盖图案; 在所述催化剂金属封盖图案上形成第二非晶硅层; 并对第二非晶硅层进行热处理以形成多晶硅层。

公开(公告)号：US20110227079A1

公开(公告)日：2011-09-22

申请号：US13036241

申请日：2011-02-28

申请人： Yong-Duck SON ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Yong-Duck SON ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L33/16 ,  H01L29/04 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1214 ,  H01L27/1255 ,  H01L29/66757

摘要： A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

摘要翻译： 一种薄膜晶体管，包括：形成在基板上的有源层; 形成在有源层的预定区域上的栅极绝缘层图案; 形成在栅极绝缘层图案的预定区域上的栅电极; 覆盖所述栅极绝缘层图案和所述栅电极的防蚀层图案; 以及形成在有源层和防蚀层图案上的源极部件和漏极部件。

公开(公告)号：US07915613B2

公开(公告)日：2011-03-29

申请号：US11758976

申请日：2007-06-06

申请人： Seung-Kyu Park

发明人： Seung-Kyu Park

IPC分类号： H01L29/10

CPC分类号： H01L27/3258 ,  H01L27/3213 ,  H01L27/322 ,  H01L51/5209

摘要： Disclosed is an organic light emitting display device including a substrate having a plurality of sub-pixel areas, a switching thin film transistor formed on each of the sub-pixel areas, a driving thin film transistor connected to the switching thin film transistor, a color filter formed on at least one of sub-pixel areas, an insulating layer formed on the switching thin film transistor, the driving thin film transistor and the color filter, a pixel electrode connected to the driving thin film transistor, an organic light emitting member formed on the pixel electrode, and a common electrode formed on the organic light emitting member. The insulating layer has a groove. The groove is formed along a boundary of the pixel electrode. The groove has a width of about 0.2 to about 4 μm. The groove has a depth of about 0.2 to about 4 μm. The pixel electrode has an edge declined in the groove.

摘要翻译： 公开了一种有机发光显示装置，包括具有多个子像素区域的基板，形成在每个子像素区域上的开关薄膜晶体管，连接到开关薄膜晶体管的驱动薄膜晶体管，颜色 在至少一个子像素区域上形成的滤光器，形成在开关薄膜晶体管上的绝缘层，驱动薄膜晶体管和滤色器，连接到驱动薄膜晶体管的像素电极，形成有机发光元件 在像素电极上形成的公共电极和形成在有机发光部件上的公共电极。 绝缘层具有凹槽。 沿着像素电极的边界形成凹槽。 槽的宽度为约0.2至约4μm。 凹槽具有约0.2至约4μm的深度。 像素电极具有在凹槽中下降的边缘。

公开(公告)号：US07864257B2

公开(公告)日：2011-01-04

申请号：US12174522

申请日：2008-07-16

申请人： Jong-Moo Huh ,  Joon-Hoo Choi ,  Seung-Kyu Park

发明人： Jong-Moo Huh ,  Joon-Hoo Choi ,  Seung-Kyu Park

IPC分类号： G02F1/136 ,  H01L31/00

CPC分类号： H01L29/66757 ,  H01L29/41733 ,  H01L29/42384

摘要： A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.

摘要翻译： 公开了薄膜晶体管和薄膜晶体管的制造方法。 薄膜晶体管包括第一和第二欧姆接触层，激活层，绝缘层，形成在绝缘层上并通过第一接触孔连接到第一欧姆接触层的源电极，形成在绝缘层上的漏电极和 通过第二接触孔连接到第二欧姆接触层，形成在源电极和漏电极之间的绝缘层上并与激活层重叠的栅极，以及形成在源电极，漏极和 栅电极。

公开(公告)号：US20100255620A1

公开(公告)日：2010-10-07

申请号：US12817510

申请日：2010-06-17

申请人： Jong-Moo HUH ,  Seung-Kyu PARK ,  Tae-Youn KIM

发明人： Jong-Moo HUH ,  Seung-Kyu PARK ,  Tae-Youn KIM

IPC分类号： H01L21/336

CPC分类号： H01L27/124 ,  H01L29/66765

摘要： The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.

摘要翻译： 本发明提供一种薄膜晶体管阵列面板，其包括基板，形成在基板上的栅极线，形成在栅极线上的多晶半导体，形成在多晶半导体上的数据线，包括第一电极，形成在多晶半导体上的第二电极和 面对第一电极和连接到第二电极的像素电极。

公开(公告)号：US20090159887A1

公开(公告)日：2009-06-25

申请号：US12174522

申请日：2008-07-16

申请人： Jong-Moo HUH ,  Joon-Hoo CHOI ,  Seung-Kyu PARK

发明人： Jong-Moo HUH ,  Joon-Hoo CHOI ,  Seung-Kyu PARK

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/41733 ,  H01L29/42384

摘要： A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.

摘要翻译： 公开了薄膜晶体管和薄膜晶体管的制造方法。 薄膜晶体管包括第一和第二欧姆接触层，激活层，绝缘层，形成在绝缘层上并通过第一接触孔连接到第一欧姆接触层的源电极，形成在绝缘层上的漏电极和 通过第二接触孔连接到第二欧姆接触层，形成在源电极和漏电极之间的绝缘层上并与激活层重叠的栅极，以及形成在源电极，漏极和 栅电极。

公开(公告)号：US20080042139A1

公开(公告)日：2008-02-21

申请号：US11773059

申请日：2007-07-03

申请人： Jong-Moo HUH ,  Joon-Hoo CHOI ,  Seung-Kyu PARK ,  Byoung-Seong JEONG

发明人： Jong-Moo HUH ,  Joon-Hoo CHOI ,  Seung-Kyu PARK ,  Byoung-Seong JEONG

IPC分类号： H01L31/0368 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/0015

摘要： A method for manufacturing an organic light emitting diode display includes disposing a crystalline semiconductor layer on a substrate, disposing a gate line, a driving input electrode, and a driving output electrode on the crystalline semiconductor layer, the gate line including a switching control electrode, patterning the crystalline semiconductor layer using the gate line, the driving input electrode, and the driving output electrode as a mask, disposing a gate insulating layer and an amorphous semiconductor layer on the gate line, the driving input electrode, and the driving output electrode, disposing a data line, a driving voltage line, a switching output electrode, and a driving control electrode on the amorphous semiconductor, the data line including a switching input electrode, disposing a pixel electrode connected to the driving output electrode, disposing a light emitting member on the pixel electrode, and disposing a common electrode on the light emitting member.

摘要翻译： 一种制造有机发光二极管显示器的方法包括在晶体半导体层上在晶体半导体层上设置晶体半导体层，在晶体半导体层上设置栅极线，驱动输入电极和驱动输出电极，栅极线包括开关控制电极， 使用栅极线，驱动输入电极和驱动输出电极作为掩模图案化晶体半导体层，在栅极线，驱动输入电极和驱动输出电极上设置栅极绝缘层和非晶半导体层， 在所述非晶半导体上设置数据线，驱动电压线，开关输出电极和驱动控制电极，所述数据线包括开关输入电极，配置连接到所述驱动输出电极的像素电极，配置发光部件 并且在发光部件上设置公共电极。

公开(公告)号：US20070295962A1

公开(公告)日：2007-12-27

申请号：US11615439

申请日：2006-12-22

申请人： Joon-Hoo CHOI ,  Jong-Moo HUH ,  Joon-Chul GOH ,  Seung-Kyu PARK ,  Kwang-Chul JUNG

发明人： Joon-Hoo CHOI ,  Jong-Moo HUH ,  Joon-Chul GOH ,  Seung-Kyu PARK ,  Kwang-Chul JUNG

IPC分类号： H01L29/04

CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L27/3244

摘要： An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of the gate line and the data line, the light blocking member is formed under at least one of the gate line, the data line, and the driving voltage line, the switching TFT is connected to the gate line and the data line and includes an amorphous semiconductor, the driving TFT is connected to the switching TFT and includes a polycrystalline semiconductor, and the OLED is connected to the driving TFT.

摘要翻译： 有机发光二极管（“OLED”）显示器包括衬底，栅极线，数据线，驱动电压线，遮光构件，开关薄膜晶体管（“TFT”），驱动TFT和 OLED，其中所述驱动电压线包括与所述栅极线和所述数据线中的至少一个平行的部分，所述遮光部件形成在所述栅极线，所述数据线和所述驱动电压线中的至少一个之下， 开关TFT连接到栅极线和数据线并且包括非晶半导体，驱动TFT连接到开关TFT并且包括多晶半导体，并且OLED连接到驱动TFT。

公开(公告)号：US20070134567A1

公开(公告)日：2007-06-14

申请号：US11638037

申请日：2006-12-12

申请人： Seung-kyu Park ,  Jong-moo Huh

发明人： Seung-kyu Park ,  Jong-moo Huh

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： C23C14/042 ,  H01L51/56

摘要： A mask for deposition of a low molecule deposition on a substrate for a display device comprises: a supporting frame formed with a pattern forming region; a plurality of pattern forming parts formed in the pattern forming region; and an auxiliary supporting frame formed between the pattern forming parts.

摘要翻译： 用于在用于显示装置的基板上沉积低分子沉积的掩模包括：形成有图案形成区域的支撑框架; 形成在所述图案形成区域中的多个图案形成部; 以及形成在图案形成部之间的辅助支撑框架。