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    WORKPIECE PROCESSING METHOD AND WORKPIECE PROCESSING MACHINE
    74.
    发明申请
    WORKPIECE PROCESSING METHOD AND WORKPIECE PROCESSING MACHINE 有权

    公开(公告)号：US20220253034A1

    公开(公告)日：2022-08-11

    申请号：US17606356

    申请日：2020-04-21

    Applicant: SHIBAURA MACHINE CO., LTD.

    Inventor： Koji TSUCHIYA

    IPC: G05B19/404 ,  B23Q15/12 ,  B23C5/00 ,  G05B19/402

    Abstract: A processing apparatus for processing a workpiece includes a tool holding part 9 for holding a tool 3 for processing a workpiece 5, a transferring part 11 for transferring the tool 3 for processing the workpiece 5 with the tool 3, and a control unit 13 for controlling the transferring part 11 so as to transfer the tool 3 with respect to the workpiece 5 on the basis of an NC program, and in the NC program, an arithmetic expression for calculating the position of the tool 3 is incorporated and the program is corrected on the basis of the relationship between the cutting transferring distance, the wear amount, and the deflection amount in addition to the contour error of the tool 3.

    Plasticizing device, injection device, molding apparatus, and manufacturing method of molded parts
    76.
    发明授权
    Plasticizing device, injection device, molding apparatus, and manufacturing method of molded parts 有权

    公开(公告)号：US11376774B2

    公开(公告)日：2022-07-05

    申请号：US17061857

    申请日：2020-10-02

    Applicant: SHIBAURA MACHINE CO., LTD.

    Inventor： Masamichi Momono

    IPC: B29C45/54 ,  B29B7/42 ,  B29B7/90 ,  B29B7/60 ,  B29C45/18 ,  B29C45/62 ,  B29B7/74 ,  B29K101/12

    Abstract: 1. A plasticizing device includes a barrel including a resin material supply port portion and a fiber supply port portion which is formed on a distal side from the resin material supply port portion; and a screw that comprises a shaft body and a flight, and is received in the barrel. The barrel is disposed with a posture in which its axial line intersects a gravitational direction. A maximum length of an opening in the barrel of the fiber supply port portion along an axial direction of the barrel is 1 time or more and 2 times or less as much as a pitch of the flight disposed in a portion of the screw which faces the opening in the barrel of the fiber supply port portion in a direction perpendicular to the axial line of the barrel.

    Deep ultraviolet LED and method for producing the same
    78.
    发明授权
    Deep ultraviolet LED and method for producing the same 有权

    公开(公告)号：US11309454B2

    公开(公告)日：2022-04-19

    申请号：US16964881

    申请日：2019-01-25

    Applicant: MARUBUN CORPORATION ,  SHIBAURA MACHINE CO., LTD. ,  RIKEN ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD. ,  NIPPON TUNGSTEN CO., LTD. ,  DAI NIPPON PRINTING CO., LTD. ,  DOWA HOLDINGS CO., LTD.

    Inventor： Yukio Kashima ,  Eriko Matsuura ,  Mitsunori Kokubo ,  Takaharu Tashiro ,  Hideki Hirayama ,  Noritoshi Maeda ,  Masafumi Jo ,  Ryuichiro Kamimura ,  Yamato Osada ,  Kanji Furuta ,  Takeshi Iwai ,  Yohei Aoyama ,  Yasushi Iwaisako ,  Tsugumi Nagano ,  Yasuhiro Watanabe

    IPC: H01L33/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40

    Abstract: A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

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