利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

35 条记录 (耗时 0.018 秒)

    Method for producing silver nanowires, silver nanowires, and ink using same
    3.
    发明授权
    Method for producing silver nanowires, silver nanowires, and ink using same 有权

    公开(公告)号：US10220441B2

    公开(公告)日：2019-03-05

    申请号：US15122200

    申请日：2015-03-03

    申请人： DOWA HOLDINGS CO., LTD.

    发明人： Hirotoshi Saito ,  Daisuke Kodama ,  Kimitaka Sato

    IPC分类号： B22F1/00 ,  C09D11/52 ,  H01B1/02 ,  B22F1/02 ,  B22F9/24 ,  H01B1/22

    摘要： A method for producing silver nanowires, containing reduction-precipitating silver in the form of wire in an alcohol solvent having dissolved therein a silver compound, the deposition being performed in the alcohol solvent having dissolved therein a chloride, a bromide, an alkali metal hydroxide, an aluminum salt, and an organic protective agent, the molar ratio Al/OH of the total Al amount of the aluminum salt dissolved in the solvent and the total hydroxide ion amount of the alkali metal hydroxide dissolved therein being from 0.01 to 0.40, the molar ratio OH/Ag of the total hydroxide ion amount of the alkali metal hydroxide dissolved in the solvent and the total Ag amount of the silver compound dissolved therein being from 0.005 to 0.50.

    POSITIVE-ELECTRODE ACTIVE-MATERIAL POWDER AND MANUFACTURING METHOD THEREFOR
    5.
    发明申请
    POSITIVE-ELECTRODE ACTIVE-MATERIAL POWDER AND MANUFACTURING METHOD THEREFOR 有权
    正极电极活性粉末及其制造方法

    公开(公告)号：US20160093914A1

    公开(公告)日：2016-03-31

    申请号：US14787004

    申请日：2014-05-06

    申请人： DOWA HOLDINGS CO., LTD.

    发明人： Koji TANOUE ,  Yoshiaki AIKI

    IPC分类号： H01M10/0562 ,  H01M4/485 ,  H01M4/525 ,  H01M10/0525

    CPC分类号： H01M10/0562 ,  C01B25/45 ,  H01M4/0471 ,  H01M4/1391 ,  H01M4/366 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M4/62 ,  H01M10/0525 ,  H01M2004/028 ,  H01M2300/0068 ,  H01M2300/0071

    摘要： A positive electrode active material for a lithium ion secondary cell, in which the amount of a transition metal present in the vicinity of the outermost surface thereof is significantly decreased is provided. A solid electrolyte-coated positive electrode active material powder contains particles of a positive electrode active material for lithium ion secondary cell, containing a composite oxide of Li and a transition metal M, having on a surface thereof a coating layer of a solid electrolyte represented by Li1+XAlXTi2−X(PO4)3, wherein 0 £×£ 0.5. An average proportion of a total atom number of Al, Ti and P in a total atom number of Al, Ti, M and P within an etching depth of 1 nm from the outermost surface determined by analysis in a depth direction with XPS is 50% or more. The transition metal M is, for example, at least one kind of Co, Ni and Mn.

    摘要翻译： 提供了其中存在于其最外表面附近的过渡金属的量显着减少的锂离子二次电池用正极活性物质。 固体电解质包覆的正极活性物质粉末含有锂离子二次电池用正极活性物质的微粒，其含有Li和过渡金属M的复合氧化物，其表面上具有由 Li1 + XAlXTi2-X（PO4）3，其中0£×£0.5。 在通过用XPS的深度方向分析确定的蚀刻深度为1nm的蚀刻深度中的Al，Ti，M和P的总原子数中的Al，Ti和P的总原子数的平均比例为50％ 或者更多。 过渡金属M例如为Co，Ni，Mn中的至少一种。

    DEEP ULTRAVIOLET LED AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    DEEP ULTRAVIOLET LED AND METHOD FOR PRODUCING THE SAME 有权

    公开(公告)号：US20210036186A1

    公开(公告)日：2021-02-04

    申请号：US16964881

    申请日：2019-01-25

    申请人： MARUBUN CORPORATION ,  SHIBAURA MACHINE CO., LTD. ,  RIKEN ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD. ,  NIPPON TUNGSTEN CO., LTD. ,  DAI NIPPON PRINTING CO., LTD. ,  DOWA HOLDINGS CO., LTD.

    发明人： Yukio KASHIMA ,  Eriko MATSUURA ,  Mitsunori KOKUBO ,  Takaharu TASHIRO ,  Hideki HIRAYAMA ,  Noritoshi MAEDA ,  Masafumi JO ,  Ryuichiro KAMIMURA ,  Yamato OSADA ,  Kanji FURUTA ,  Takeshi IWAI ,  Yohei AOYAMA ,  Yasushi IWAISAKO ,  Tsugumi NAGANO ,  Yasuhiro WATANABE

    IPC分类号： H01L33/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40

    摘要： A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.