公开(公告)号：US5214005A

公开(公告)日：1993-05-25

申请号：US820550

申请日：1992-01-14

申请人： Akira Yamakawa ,  Koichi Sogabe

发明人： Akira Yamakawa ,  Koichi Sogabe

IPC分类号： C04B35/63 ,  C03C14/00 ,  C04B35/581 ,  C04B35/626 ,  C04B35/80 ,  H01L23/15

CPC分类号： H01L23/15 ,  C03C14/004 ,  C04B35/806 ,  C03C2214/04 ,  C03C2214/06 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A glass-aluminum nitride composite comprising a sintered body is produced by adding glass powder to aluminum nitride grains having an oxygen content of less than 2% and a mean grain diameter of 1.0 .mu.m or more and subjecting the mixture to molding and sintering. A suitable glass is one based on borosilicate and the addition of an AlN whisker serves to improve the strength. The composite material of the present invention has a high heat conductivity, a low permittivity and a high strength and is suitable as a semiconductor packaging material.

摘要翻译： 通过将玻璃粉末加入到氧含量小于2％，平均粒径为1.0μm以上的氮化铝颗粒中，并对该混合物进行成型和烧结来制造包含烧结体的玻璃 - 氮化铝复合体。 合适的玻璃是基于硼硅酸盐的玻璃，并且添加AlN晶须用于提高强度。 本发明的复合材料具有高导热性，低介电常数和高强度，并且适合作为半导体封装材料。

公开(公告)号：US4660114A

公开(公告)日：1987-04-21

申请号：US699396

申请日：1985-02-07

申请人： Akira Yamakawa ,  Yoshinobu Takeda ,  Eiji Kamijo

发明人： Akira Yamakawa ,  Yoshinobu Takeda ,  Eiji Kamijo

IPC分类号： C04B35/48 ,  G11B5/31 ,  H01F10/26 ,  H01F10/28 ,  G11B5/22 ,  G11B5/14

CPC分类号： G11B5/31

摘要： A novel thin film magnetic head is provided characterized by the use of a new substrate material excellent in mechanical property as well as machinability. This substrate is composed of a ceramic compact comprising 4 to 45% by volume of Component A, 55 to 96% by volume of Component B and at most 3% by volume of unavoidable impurities:Component A: at least one member selected from the group consisting of carbides, nitrides, carbonitrides, carboxides, oxynitrides and carboxynitrides of Group IVa, Va and VIa elements of Periodic Table and mixtures or solid solutions thereof.Component B: ZrO.sub.2 consisting of at least 70% by weight of tetragonal and/or cubic system and the balance of monoclinic system, in which at least one member selected from the group consisting of oxides of Group IIIa elements of Periodic Table, CaO and MgO, and mixtures thereof is dissolved to form a solid solution.

摘要翻译： 提供了一种新颖的薄膜磁头，其特征在于使用机械性能和切削性优异的新型基材。 该基材由包含4至45体积％的组分A，55至96体积％的组分B和至多3体积％的不可避免的杂质的陶瓷压块组成：组分A：选自组中的至少一种 由元素周期表IVa族，Ⅴa和Ⅵa族元素的碳化物，氮化物，碳氮化物，羧基，氮氧化物和羧基氮化物组成，以及它们的混合物或固体溶液。 组分B：由至少70重量％的四方晶系和/或立方体系组成的ZrO 2，余量为单斜晶系，其中选自元素周期表Ⅲa族元素的氧化物，CaO和MgO中的至少一种 ，及其混合物溶解形成固溶体。

公开(公告)号：US4383957A

公开(公告)日：1983-05-17

申请号：US265569

申请日：1981-05-20

申请人： Akira Yamakawa ,  Akira Doi ,  Yoshihiko Doi

发明人： Akira Yamakawa ,  Akira Doi ,  Yoshihiko Doi

IPC分类号： C04B35/10 ,  C04B35/111 ,  C04B35/119 ,  C04B35/58 ,  C04B35/64

CPC分类号： C04B35/111 ,  C04B35/119 ,  C04B35/64

摘要： A ceramic sintered body with a high density and high surface smoothness is obtained by sintering a ceramic composition comprising oxides as a substantial or partial component in an atmosphere of CO gas or in a mixture of CO gas and an inert gas.

摘要翻译： 通过在CO气体或CO气体和惰性气体的混合气体中烧结包含氧化物作为实质或部分成分的陶瓷组合物，获得具有高密度和高表面平滑度的陶瓷烧结体。

公开(公告)号：US06458298B1

公开(公告)日：2002-10-01

申请号：US08505069

申请日：1995-07-21

申请人： Tomoyuki Awazu ,  Yasushi Tsuzuki ,  Akira Yamakawa

发明人： Tomoyuki Awazu ,  Yasushi Tsuzuki ,  Akira Yamakawa

IPC分类号： B28B126

CPC分类号： B28B1/262 ,  B28B1/265 ,  B29C2043/3628 ,  B29L2023/00

摘要： A wet molding method in which a ceramic slurry is charged into a cavity and uniaxially pressed by a punch to remove excess liquid from a portion of the slurry facing the punch to effect molding, the method being improved by maintaining at least one of the following conditions; (a) the pressing of the slurry is stopped at a time between T and 1.5 T, T being defined as the pressing time necessary to remove sufficient excess liquid from the slurry in the mold to produce a molded mass; or (b) the punch displacement position at a time at which sufficient excess liquid is removed from the slurry in the mold to produce a molded mass is less than 17% of the total mold length.

摘要翻译： 一种湿法成型方法，其中将陶瓷浆料装入空腔中并通过冲头单轴挤压以从面向冲头的浆料的一部分中除去多余的液体以实现模塑，该方法通过保持以下条件中的至少一种而得到改善 （a）在T和1.5T之间停止浆料的压制，T定义为从模具中的浆料中除去足够多的液体以产生模制物料所需的挤压时间; 或（b）在模具中从浆料中除去足够多的液体以产生模制物料的时间处的冲头位移位置小于总模具长度的17％。

公开(公告)号：US6143677A

公开(公告)日：2000-11-07

申请号：US254960

申请日：1999-03-22

申请人： Michimasa Miyanaga ,  Seiji Nakahata ,  Akira Yamakawa

发明人： Michimasa Miyanaga ,  Seiji Nakahata ,  Akira Yamakawa

IPC分类号： C04B35/584 ,  C04B35/591 ,  C04B35/583 ,  C04B35/65

CPC分类号： C04B35/591 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3445 ,  C04B2235/3839 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/661 ,  C04B2235/723 ,  C04B2235/728 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607

摘要： A high thermal conductive silicon nitride base sintered body which comprises a phase comprising crystal grains of silicon nitride and a grain boundary phase containing a compound of at least one element selected from the group consisting of yttrium and the lanthanide elements in an amount of 1 to 20% by weight in terms of oxide amount, and contains free silicon dispersed therein in an amount of 0.01 to 10% by weight based on the whole. This high thermal conductive silicon nitride base sintered body has high strength coupled with high thermal conductivity and thus is useful not only as various parts for semiconductor devices, such as radiating insulating substrates, but as various structural parts for machines, OA apparatuses, etc.

摘要翻译： PCT No.PCT / JP98 / 03878 Sec。 371日期1999年3月22日 102（e）1999年3月22日PCT 1998年8月31日PCT PCT。 出版物WO99 /​​ 11583 日期1999年3月11日一种高导热氮化硅基烧结体，其包括含有氮化硅晶粒的相和含有选自钇和镧系元素中的至少一种元素的化合物的晶界相， 以氧化物量计为1〜20重量％，并且以总计为0.01〜10重量％的量含有分散于其中的游离硅。 该高导热性氮化硅基烧结体具有高强度，高导热性，不仅可用作半导体器件的各种部件，例如辐射绝缘基板，而且用作机器，OA设备等的各种结构部件。

公开(公告)号：US5809842A

公开(公告)日：1998-09-22

申请号：US718588

申请日：1996-09-26

申请人： Masamichi Yamagiwa ,  Takao Nishioka ,  Hisao Takeuchi ,  Akira Yamakawa

发明人： Masamichi Yamagiwa ,  Takao Nishioka ,  Hisao Takeuchi ,  Akira Yamakawa

IPC分类号： F01L1/14 ,  F01L1/16 ,  F01L13/00 ,  F16H53/06

CPC分类号： F01L13/0042 ,  F01L1/14 ,  F01L1/16 ,  F01L2101/02 ,  F01L2103/00 ,  Y10T74/2107

摘要： The present invention is intended to provide a sliding member that can prevent abnormal wear and partial wear of the mating metal sliding component even when an oil contaminated with exhaust gas components is used. A ceramic sliding component is manufactured as followed. A silicon nitride-based material for the sliding face member is joined to a metal body having a higher thermal expansion coefficient than the sliding face member. A crowned portion is formed on the sliding face of the sliding face member in such a way that the difference between the amounts of crowning (da, db) at two arbitrary points axially symmetric with respect to the center line of the crowned portion is 10% or more and 50% or less of the average of the crowning amounts at the two points.

摘要翻译： PCT No.PCT / JP96 / 01727 Sec。 371日期1996年9月26日 102（e）1996年9月26日PCT PCT 1996年6月21日PCT公布。 出版物WO97 / 01696 日本1997年1月16日本发明旨在提供一种能够防止配合金属滑动部件的异常磨损和部分磨损的滑动部件，即使当使用被废气成分污染的油时。 如下制造陶瓷滑动部件。 用于滑动面构件的氮化硅基材料接合到具有比滑动面构件更高的热膨胀系数的金属体。 在滑动面构件的滑动面上形成隆起部分，使得相对于凸面部分的中心线轴对称的两个任意点处的隆起量（da，db）之间的差为10％ 以上且两点以上的加工量的平均值的50％以下。

公开(公告)号：US5767026A

公开(公告)日：1998-06-16

申请号：US633797

申请日：1996-04-10

申请人： Naoki Kondoh ,  Fumihiro Wakai ,  Yoshihiro Obata ,  Akira Yamakawa ,  Takao Nishioka ,  Masashi Yoshimura

发明人： Naoki Kondoh ,  Fumihiro Wakai ,  Yoshihiro Obata ,  Akira Yamakawa ,  Takao Nishioka ,  Masashi Yoshimura

IPC分类号： B28B1/00 ,  C04B35/584 ,  C04B35/593 ,  C04B35/597 ,  C04B35/599 ,  C04B35/626

CPC分类号： C04B35/593 ,  C04B35/597

摘要： There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.

摘要翻译： PCT No.PCT / JP95 / 02026 Sec。 371日期：1996年4月10日 102（e）日期1996年4月10日PCT提交1995年10月4日PCT公布。 公开号WO96 / 10546 日本特开1996年4月11日提供了一种形成氮化硅烧结体的方法，其包括塞隆烧结体，通过使烧结体的大部分超塑性作为简单材料而不被形成为复合材料而形成，并形成 通过上述方法制造的烧结体。 一种氮化硅烧结体（包括赛隆烧结体），其相对密度至少为95％，线密度为120-250，以二维截面为单位长度的每50微米的颗粒数 该烧结体通过在1300〜1700℃的拉伸或压缩压力下以至多10-1 /秒的应变速率的塑性变形形成。所形成的烧结体的取向度为5〜80 ％，根据Saltykov规定的方法，线密度为80〜200，特别是在常温下，具有优异的机械性能。

公开(公告)号：US5698156A

公开(公告)日：1997-12-16

申请号：US448189

申请日：1995-05-23

申请人： Takashi Matsuura ,  Akira Yamakawa ,  Hasaya Miyake

发明人： Takashi Matsuura ,  Akira Yamakawa ,  Hasaya Miyake

IPC分类号： C04B35/584 ,  C04B35/64 ,  C04B33/32 ,  C04B33/34 ,  C04B33/36 ,  C04B35/71

CPC分类号： C04B35/584 ,  C04B35/64

摘要： Provided herein is a me silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. The crystalline silicon nitride powder thus produced is composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. According to the disclosed method, the silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C. sec) at a temperature of 1400.degree. C. to 1900.degree. C. By this method, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

摘要翻译： 本文提供了仅由均匀的细晶粒组成的I型氮化硅基烧结体，并且在中低温范围内提高了强度和断裂韧性。 由此制造的结晶氮化硅粉末由长轴直径不大于200nm的晶粒或非晶氮化硅粉末用作材料粉末构成。 根据所公开的方法，氮化硅粉末在1200℃至1400℃的温度下烧结，或烧结温度（℃）和烧结时间（秒）低于600000℃的产物烧结。 秒），在1400℃〜1900℃的温度下，得到氮化硅和/或赛隆晶体的长轴径不大于200nm的氮化硅系烧结体。

公开(公告)号：US5605494A

公开(公告)日：1997-02-25

申请号：US423726

申请日：1995-04-18

申请人： Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa

发明人： Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24B19/22 ,  B24D3/00 ,  C04B35/584

CPC分类号： B24B19/22 ,  B24B1/00

摘要： An industrially feasible method of grinding silicon nitride ceramics is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 micron. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a workpiece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the workpiece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.

摘要翻译： 公开了一种工业上可行的研磨氮化硅陶瓷的方法，并提供了足够光滑的表面。 即，表面的最大高度粗糙度Rmax为0.1微米以下，十点平均粗糙度Rz为0.05微米。 此外，通过该方法，可以在磨削时修复表面损伤。 研磨轮进入工件的垂直切削进给速率应在车轮工作表面的每次旋转时在0.005-0.1微米的范围内，并且线性或逐步改变。 砂轮在水平（旋转）方向上的切割速度应在25至75米/秒的范围内。 通过这种布置，在磨削期间在工件和硬磨粒之间产生的接触压力和磨削热被组合。 换句话说，组合了机械和热动作。

公开(公告)号：US5584745A

公开(公告)日：1996-12-17

申请号：US162302

申请日：1993-12-06

申请人： Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa

发明人： Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24B19/22 ,  B24D3/00 ,  C04B35/584

CPC分类号： B24B19/22 ,  B24B1/00

摘要： An industrially feasible method of grinding silicon nitride ceramics is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 microns. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a work piece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the work piece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.

摘要翻译： 公开了一种工业上可行的研磨氮化硅陶瓷的方法，并提供了足够光滑的表面。 即，表面的最大高度粗糙度Rmax为0.1微米以下，十点平均粗糙度Rz为0.05微米。 此外，通过该方法，可以在磨削时修复表面损伤。 研磨轮进入工件的垂直切削进给速率应在车轮工作表面的每次旋转中在0.005-0.1微米的范围内，并且线性或逐步改变。 砂轮在水平（旋转）方向上的切割速度应在25至75米/秒的范围内。 通过这种布置，在磨削期间在工件和硬磨料颗粒之间产生的接触压力和磨削热被组合。 换句话说，组合了机械和热动作。