公开(公告)号：US11302549B2

公开(公告)日：2022-04-12

申请号：US16432590

申请日：2019-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh ,  Srinivas D. Nemani ,  Arvind Sundarrajan ,  Avinash Avula ,  Ellie Y. Yieh

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of substrate transfer apparatus are provided herein. In some embodiments, an apparatus for storing and transporting at least one substrate in a vacuum includes a carrying case for storing one or more substrates, wherein the carrying case includes a vacuum port and a plurality of holders to hold one or more substrates within an inner volume of the carrying case; and a vacuum source in fluid connection with the carrying case via the vacuum port.

公开(公告)号：US11049537B2

公开(公告)日：2021-06-29

申请号：US16525470

申请日：2019-07-29

Applicant: Applied Materials, Inc.

Inventor： John O. Dukovic ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Praburam Gopalraja ,  Steven Hiloong Welch ,  Bhargav S. Citla

IPC: H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：US10998200B2

公开(公告)日：2021-05-04

申请号：US16262094

申请日：2019-01-30

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Mei-Yee Shek ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/00 ,  H01L21/383 ,  C23C14/58 ,  C23C14/48 ,  H01L21/44

Abstract: The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.

公开(公告)号：US10811250B2

公开(公告)日：2020-10-20

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/452 ,  C23C16/56 ,  C23C16/505 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US10714331B2

公开(公告)日：2020-07-14

申请号：US16354654

申请日：2019-03-15

Applicant: Applied Materials, Inc.

Inventor： Mihaela Balseanu ,  Srinivas D. Nemani ,  Mei-Yee Shek ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/46 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

Abstract: A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.

公开(公告)号：US10590530B2

公开(公告)日：2020-03-17

申请号：US16290786

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US10240232B2

公开(公告)日：2019-03-26

申请号：US15184670

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US20190013197A1

公开(公告)日：2019-01-10

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/34

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US20180342396A1

公开(公告)日：2018-11-29

申请号：US15605769

申请日：2017-05-25

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Thomas Jongwan Kwon ,  Sean Kang ,  Ellie Y. Yieh

IPC: H01L21/285 ,  H01L27/115 ,  H01L21/768 ,  C23C16/08 ,  C23C16/56

Abstract: Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.

公开(公告)号：US10128337B2

公开(公告)日：2018-11-13

申请号：US15173234

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Zhong Qiang Hua ,  Chentsau Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/04 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67 ,  H01L21/677

Abstract: Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. The methods include a structure reshaping process to reshape a shaped structure, such as a diamond like structure formed on a fin structure. In one embodiment, a method for forming a structure on a substrate includes performing an epitaxial deposition process to form a shaped structure on a fin structure disposed on a substrate, performing a mask layer deposition process to form a mask layer having a first width on the shaped structure, and performing a mask trimming process to trim the mask layer from the first width from a second width.