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    DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA
    1.
    发明公开
    DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA 审中-公开

    公开(公告)号：US20240234131A1

    公开(公告)日：2024-07-11

    申请号：US18584540

    申请日：2024-02-22

    Applicant: Applied Materials, Inc.

    Inventor： Purvam Dineshbhai Modi ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

    CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

    Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.

    DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES
    2.
    发明公开
    DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES 审中-公开

    公开(公告)号：US20240234128A1

    公开(公告)日：2024-07-11

    申请号：US18095279

    申请日：2023-01-10

    Applicant: Applied Materials, Inc.

    Inventor： Taiki Hatakeyama ,  Bhargav S. Citla ,  Qiang Ma ,  Biao Liu ,  Srinivas D. Nemani

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

    CPC classification number: H01L21/02167 ,  H01J37/32146 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01J2237/334

    Abstract: Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the carbon-containing precursor. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-and-carbon-containing material from a sidewall of the feature within the substrate. The methods may include providing a nitrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the nitrogen-containing precursor, and doping the silicon-and-carbon-containing material with nitrogen.

    DIRECTIONAL SELECTIVE FILL OF SILICON OXIDE MATERIALS
    3.
    发明申请
    DIRECTIONAL SELECTIVE FILL OF SILICON OXIDE MATERIALS 有权

    公开(公告)号：US20250022704A1

    公开(公告)日：2025-01-16

    申请号：US18221240

    申请日：2023-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Qiang Ma ,  Biao Liu ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Taiki Hatakeyama ,  Shreyas Shukla ,  Mei-Yee Shek

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

    Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.

    DIRECTIONAL SELECTIVE DEPOSITION
    4.
    发明公开
    DIRECTIONAL SELECTIVE DEPOSITION 审中-公开

    公开(公告)号：US20230377875A1

    公开(公告)日：2023-11-23

    申请号：US18229285

    申请日：2023-08-02

    Applicant: Applied Materials, Inc.

    Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

    IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

    CPC classification number: H01L21/02274 ,  H01L21/3065 ,  H01J37/32146 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

    Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
    8.
    发明授权
    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom 有权

    公开(公告)号：US10950429B2

    公开(公告)日：2021-03-16

    申请号：US16396167

    申请日：2019-04-26

    Applicant: Applied Materials, Inc.

    Inventor： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

    IPC: H01L21/02 ,  H01L21/033 ,  C23C14/06 ,  C23C14/02 ,  C23C14/35

    Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

    Methods and apparatus for depositing dielectric material
    9.
    发明授权
    Methods and apparatus for depositing dielectric material 有权

    公开(公告)号：US11972943B2

    公开(公告)日：2024-04-30

    申请号：US16578050

    申请日：2019-09-20

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D Nemani ,  Joshua Rubnitz

    IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

    CPC classification number: H01L21/02274 ,  C23C16/45536 ,  H01J37/321 ,  H01L21/02164

    Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.

    FORMING FILMS WITH IMPROVED FILM QUALITY
    10.
    发明公开
    FORMING FILMS WITH IMPROVED FILM QUALITY 审中-公开

    公开(公告)号：US20240038527A1

    公开(公告)日：2024-02-01

    申请号：US17873597

    申请日：2022-07-26

    Applicant: Applied Materials, Inc.

    Inventor： Bhargav S. Citla ,  Srinivas D. Nemani ,  Purvam Modi ,  Ellie Y. Yieh

    IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3065

    CPC classification number: H01L21/02274 ,  H01L21/3211 ,  H01L21/3065 ,  H01L21/02126

    Abstract: A method includes depositing a flowable film on a substrate by providing a first input flow, the first input flow including plasma effluents of a first precursor, removing a portion of the flowable film from a sidewall of a feature defined within the substrate to obtain a remaining portion of the flowable film by providing a second input flow, the second input flow including plasma effluents of a second precursor, reducing hydrogen content of the remaining portion of the flowable film to obtain a densified film by providing a third input flow, the third input flow including plasma effluents of a third precursor, and treating the densified film in accordance with a film treatment process.

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