公开(公告)号：US20120193738A1

公开(公告)日：2012-08-02

申请号：US13444497

申请日：2012-04-11

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12

摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA

摘要翻译： 通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。 或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。 在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。 在双层或三层实施例中，通过组合CoB（-λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。

公开(公告)号：US08210242B2

公开(公告)日：2012-07-03

申请号：US12492142

申请日：2009-06-26

申请人： Min Li ,  Lei Cao

发明人： Min Li ,  Lei Cao

IPC分类号： H05K7/20

CPC分类号： H01L23/3672 ,  F21K9/00 ,  F21V29/713 ,  F21V29/74 ,  F21Y2115/10 ,  F28F3/02 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation device adapted for removing heat from heat-generating components includes a plurality of first fins spaced from each other and connected to the heat-generating components in thermal relationship and a plurality of second fins alternately arranged with the first fins. Each second fin is wave-shaped and has a plurality of flat first engaging portions formed at wave crests thereof and a plurality of flat second engaging portions formed at wave troughs thereof. The first engaging portions are attached to a rear side of one of two first fins neighboring to each second fin. The second engaging portions are attached to a front side of another one of the two neighboring first fins.

摘要翻译： 适用于从发热部件除去热量的散热装置包括彼此间隔开并与热关系的发热部件连接的多个第一散热片和与第一散热片交替布置的多个第二散热片。 每个第二翅片是波形的，并且具有形成在其波峰处的多个平坦的第一接合部分和形成在其波谷处的多个平坦的第二接合部分。 第一接合部附接到与每个第二翅片相邻的两个第一翅片之一的后侧。 第二接合部分附接到两个相邻的第一散热片中的另一个的前侧。

公开(公告)号：US08208219B2

公开(公告)日：2012-06-26

申请号：US12927083

申请日：2010-11-05

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3133 ,  G11B2005/001 ,  G11B2005/0024

摘要： A spin torque oscillator is described in which the conventional Field Generation Layer (FGL) is replaced by a bilayer, one of whose members exhibits perpendicular magnetic anisotropy while the other exhibits conventional in-plane anisotropy. Provided the layer with the perpendicular anisotropy is the one that is closest to the spacer layer, the device is able to generate microwaves at current densities as low as 1×108 A/cm2.

摘要翻译： 描述了一种自旋扭矩振荡器，其中常规的场产生层（FGL）由双层代替，其中一个构件呈现垂直的磁各向异性，而另一个表现出常规的面内各向异性。 如果具有垂直各向异性的层是最接近间隔层的层，该器件能够产生低至1×108A / cm 2的电流密度的微波。

公开(公告)号：US20120128870A1

公开(公告)日：2012-05-24

申请号：US12927698

申请日：2010-11-22

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

IPC分类号： H01F1/047

CPC分类号： H01F41/307 ,  B82Y40/00 ,  G11C11/161 ,  H01L43/12

摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.

摘要翻译： 公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。 通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。 在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。 在替代实施例中，在最上层金属层被沉积​​之前，在MOX1层上形成多个金属氧化物层。 所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

公开(公告)号：US20120063903A1

公开(公告)日：2012-03-15

申请号：US13231696

申请日：2011-09-13

申请人： Zhi Ping FU ,  Min Li

发明人： Zhi Ping FU ,  Min Li

IPC分类号： F01D25/00

CPC分类号： F16J15/3464 ,  F04D29/20

摘要： A coupling structure for connecting an impeller to a motor shaft of a liquid pump, includes a carrier rod sleeved on the shaft, and a seal assembly connecting the carrier rod to a housing of the pump. The carrier rod is fixed to the shaft by way of a screw thread structure. The seal assembly includes a rotating seal sealingly fixed on an outer surface of the carrier rod and fixed to the carrier rod for rotation there with by an interlocking structure.

摘要翻译： 用于将叶轮连接到液体泵的马达轴的联接结构包括套在轴上的承载杆和将承载杆连接到泵壳体的密封组件。 承载杆通过螺纹结构固定在轴上。 密封组件包括密封地固定在承载杆的外表面上并固定到承载杆上的旋转密封件，以通过联锁结构在那里旋转。

公开(公告)号：US08105703B2

公开(公告)日：2012-01-31

申请号：US12214503

申请日：2008-06-19

申请人： Hui-Chuan Wang ,  Min Li ,  Tong Zhao ,  Kunliang Zhang ,  Chyu-Jiuh Torng

发明人： Hui-Chuan Wang ,  Min Li ,  Tong Zhao ,  Kunliang Zhang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129

摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.

摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。 结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。 描述了用于制造该装置的方法。

公开(公告)号：US20120009337A1

公开(公告)日：2012-01-12

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/31 ,  C23C14/34

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US20110293967A1

公开(公告)日：2011-12-01

申请号：US12802091

申请日：2010-05-28

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/66 ,  B05D3/06

CPC分类号： G11B5/84 ,  G01R33/098 ,  G11B5/3932 ,  G11B5/66 ,  G11B5/732 ,  G11B5/7325 ,  G11B2005/0024 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1114

摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one'embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

摘要翻译： 在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50）， 以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。 在一个实施例中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。 此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。 在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

公开(公告)号：US20110273800A1

公开(公告)日：2011-11-10

申请号：US12799927

申请日：2010-05-05

申请人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

发明人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

IPC分类号： G11B5/127 ,  C23C14/46

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/315 ,  G11B5/3163 ,  G11B2005/0024

摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.

摘要翻译： 描述了至少具有前导锥形和微调极尖部分的主极层。 即使对于接近50nm的窄轨道宽度，前导锥形也增加了顶场至≧15000 Oe。 对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。 此外，可以添加全侧屏蔽以减少边缘场。 另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。 提供了一种用于形成本发明的各种实施例的方法。 一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。 可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

公开(公告)号：US20110265325A1

公开(公告)日：2011-11-03

申请号：US13135620

申请日：2011-07-11

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： H01B19/00

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.