Methods for depth profiling in semiconductors using modulated optical reflectance technology
    71.
    发明授权
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号:US07982867B2

    公开(公告)日:2011-07-19

    申请号:US12767339

    申请日:2010-04-26

    IPC分类号: G01N21/00

    摘要: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译: 使用调制光学反射率(MOR)测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面,使用从诸如结深度,结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面,开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法,将实际测量与从模型计算的理论测量值进行比较,以确定实际深度分布。

    High resolution monitoring of CD variations

    公开(公告)号:US07933026B2

    公开(公告)日:2011-04-26

    申请号:US12486830

    申请日:2009-06-18

    IPC分类号: G01B11/14 G01N21/00

    CPC分类号: G01B11/0641

    摘要: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

    Detector configurations for optical metrology
    73.
    发明申请
    Detector configurations for optical metrology 有权
    用于光学计量的检测器配置

    公开(公告)号:US20090066954A1

    公开(公告)日:2009-03-12

    申请号:US12288395

    申请日:2008-10-20

    申请人: Jon Opsal

    发明人: Jon Opsal

    IPC分类号: G01J4/00

    摘要: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

    摘要翻译: 公开了一种用于从样品获得椭偏测量的装置。 探针光束聚焦在样品上以产生入射角的扩展。 光束通过四分之一波片延迟器和偏振器。 反射光束由检测器测量。 在一个优选实施例中,检测器包括八个径向布置的段,每个段产生表示多个入射角的积分的输出。 处理器处理来自各个段的输出以导出椭偏信息。

    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
    74.
    发明授权
    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications 有权
    用于超浅结合应用的组合调制光学反射和电气系统

    公开(公告)号:US07499168B2

    公开(公告)日:2009-03-03

    申请号:US11656610

    申请日:2007-01-23

    IPC分类号: G01N21/00

    摘要: A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.

    摘要翻译: 公开了一种用于半导体晶片的计量工具,其将调制反射率测量与结光电压测量相结合。 该工具包括用于周期性激发样品的强度调制泵浦光束。 单独的探针光束用于监测样品光学反射率的变化。 此外,提供电容电极以测量电极两端的电压的调制变化。 将这些测量结合起来以评估晶片。 这些测量在表征超小结点方面特别有用。

    Systems and methods for immersion metrology

    公开(公告)号:US07436527B2

    公开(公告)日:2008-10-14

    申请号:US11732125

    申请日:2007-04-02

    申请人: Jon Opsal

    发明人: Jon Opsal

    IPC分类号: G01B11/28 G01B11/06

    摘要: Fluid immersion technology can be utilized to increase the resolution and angular range of existing metrology systems. An immersion fluid placed between the metrology optics and the sample can reduce the refraction at the sample interface, thereby decreasing the spot size of the beam on a feature of the sample while simultaneously increasing the angular range of the system. The decreased spot size, in combination with an increased angular spread, allows an existing metrology system to measure parameters of a sample, such as a semiconductor or microelectronic device, with improved resolution and without expensive and/or complex changes to the mechanics of the metrology system.

    Method for measuring ion-implanted semiconductors with improved repeatability
    76.
    发明授权
    Method for measuring ion-implanted semiconductors with improved repeatability 失效
    用于测量具有改善的重复性的离子注入半导体的方法

    公开(公告)号:US07330260B2

    公开(公告)日:2008-02-12

    申请号:US11067961

    申请日:2005-02-28

    IPC分类号: G01J4/00

    CPC分类号: G01N21/171 H01L22/12

    摘要: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

    摘要翻译: 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间,可以显着降低噪声量,从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行,以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估,解决与损伤弛豫或不完全退火有关的不确定性,可以在远离TW测量箱的距离处执行退火衰减因子(ADF)表征。 从ADF测量和晶片响应的空间平均测量,可以获得晶片工艺的可重复评估。

    Photothermal system with spectroscopic pump and probe
    77.
    发明授权
    Photothermal system with spectroscopic pump and probe 有权
    带光谱泵和探头的光热系统

    公开(公告)号:US07280215B2

    公开(公告)日:2007-10-09

    申请号:US10947925

    申请日:2004-09-23

    IPC分类号: G01N21/55

    摘要: The ability of a Modulated Optical Reflectivity (MOR) or Thermal Wave (TW) system to measure characteristics of a sample based on the amplitude and phase of a probe beam reflected from the surface of the sample can be improved by providing a polychromatic pump and/or probe beam that can be scanned over a wide spectral range, such as a range of at least 100 nm. The information contained in the spectral dependencies of a TW response obtained from the sample can be compared and/or fitted to corresponding theoretical dependencies in order to obtain more precise and reliable information about the properties of the particular sample than is available for single-wavelength systems. This information can further be combined with measurements taken for varying spot separations or varying pump source modulation frequency, as well as with photo-thermal radiometry (PTR), spectroscopic reflectometry, and/or ellipsometry measurements.

    摘要翻译: 基于从样品表面反射的探针光束的幅度和相位,调制光学反射率(MOR)或热波(TW)系统测量样品的特性的能力可以通过提供多色泵和/ 或可以在宽光谱范围(例如至少100nm的范围)上扫描的探测光束。 包含在从样本获得的TW响应的频谱相关性中的信息可以与相应的理论依赖性进行比较和/或拟合,以获得关于特定样品的性质的更精确和可靠的信息,而不是可用于单波长系统 。 该信息可以进一步与用于变化的点分离或变化的泵浦源调制频率以及光热辐射测量(PTR),光谱反射测量和/或椭偏仪测量的测量结合。

    Beam profile ellipsometer with rotating compensator

    公开(公告)号:US20070159630A1

    公开(公告)日:2007-07-12

    申请号:US11715584

    申请日:2007-03-08

    申请人: Jon Opsal

    发明人: Jon Opsal

    IPC分类号: G01J4/00

    CPC分类号: G01J4/04 G01N21/211

    摘要: An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.

    Optical scatterometry of asymmetric lines and structures
    79.
    发明授权
    Optical scatterometry of asymmetric lines and structures 有权
    不对称线和结构的光散射

    公开(公告)号:US07061627B2

    公开(公告)日:2006-06-13

    申请号:US10385863

    申请日:2003-03-11

    IPC分类号: G01B11/30

    CPC分类号: G03F7/70625 G03F7/70633

    摘要: A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

    摘要翻译: 用于分析不对称结构(包括隔离和周期性结构)的方法包括用于宽带光谱仪的分离检测器。 分体检测器具有单独的左右两半。 通过独立测量和比较右和左散射光线,可以确定关于不对称性的信息。

    Real time analysis of periodic structures on semiconductors
    80.
    发明申请
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US20050251350A1

    公开(公告)日:2005-11-10

    申请号:US11177699

    申请日:2005-07-08

    申请人: Jon Opsal Hanyou Chu

    发明人: Jon Opsal Hanyou Chu

    摘要: A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

    摘要翻译: 公开了一种在实时基础上表征样品上形成的几何结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器。 处理器创建初始理论模型,然后计算该样本的理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 处理器重新计算修改模型的光学响应,并将结果与​​测量数据进行比较。 以迭代的方式重复该过程,直到达到最佳拟合。 计算模型的光学响应的​​步骤作为波长或入射角分布到处理器,因此可以并行执行这些计算。