摘要:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.
摘要:
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.
摘要:
An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.
摘要:
A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.
摘要:
Fluid immersion technology can be utilized to increase the resolution and angular range of existing metrology systems. An immersion fluid placed between the metrology optics and the sample can reduce the refraction at the sample interface, thereby decreasing the spot size of the beam on a feature of the sample while simultaneously increasing the angular range of the system. The decreased spot size, in combination with an increased angular spread, allows an existing metrology system to measure parameters of a sample, such as a semiconductor or microelectronic device, with improved resolution and without expensive and/or complex changes to the mechanics of the metrology system.
摘要:
The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
摘要:
The ability of a Modulated Optical Reflectivity (MOR) or Thermal Wave (TW) system to measure characteristics of a sample based on the amplitude and phase of a probe beam reflected from the surface of the sample can be improved by providing a polychromatic pump and/or probe beam that can be scanned over a wide spectral range, such as a range of at least 100 nm. The information contained in the spectral dependencies of a TW response obtained from the sample can be compared and/or fitted to corresponding theoretical dependencies in order to obtain more precise and reliable information about the properties of the particular sample than is available for single-wavelength systems. This information can further be combined with measurements taken for varying spot separations or varying pump source modulation frequency, as well as with photo-thermal radiometry (PTR), spectroscopic reflectometry, and/or ellipsometry measurements.
摘要:
An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.
摘要:
A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.
摘要:
A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.