公开(公告)号：US08129796B2

公开(公告)日：2012-03-06

申请号：US13070028

申请日：2011-03-23

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L27/11

CPC分类号： H01L27/11 ,  H01L21/823885

摘要： There is provided a high-integrated complementary metal-oxide semiconductor static random-access memory including an inverter. The inverter includes: a first pillar that is formed by integrating a first-conductivity-type semiconductor, a second-conductivity-type semiconductor, and an insulating material disposed between the first-conductivity-type semiconductor and the second-conductivity-type semiconductor, and that vertically extends with respect to a substrate; a first second-conductivity-type high-concentration semiconductor disposed on the first-conductivity-type semiconductor; a second second-conductivity-type high-concentration semiconductor disposed under the first-conductivity-type semiconductor; a first first-conductivity-type high-concentration semiconductor disposed on the second-conductivity-type semiconductor; a second first-conductivity-type high-concentration semiconductor disposed under the second-conductivity-type semiconductor; a gate insulating material formed around the first pillar; and a gate conductive material formed around the gate insulating material.

摘要翻译： 提供了包括逆变器的高集成度的互补金属氧化物半导体静态随机存取存储器。 逆变器包括：通过集成第一导电型半导体，第二导​​电型半导体和设置在第一导电型半导体与第二导电型半导体之间的绝缘材料形成的第一柱， 并且相对于衬底垂直地延伸; 设置在第一导电型半导体上的第一第二导电型高浓度半导体; 设置在第一导电型半导体下方的第二第二导电型高浓度半导体; 布置在第二导电型半导体上的第一第一导电型高浓度半导体; 设置在第二导电型半导体下方的第二第一导电型高浓度半导体; 围绕所述第一支柱形成的栅极绝缘材料; 以及形成在栅极绝缘材料周围的栅极导电材料。

公开(公告)号：US08115237B2

公开(公告)日：2012-02-14

申请号：US13115715

申请日：2011-05-25

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L27/148

CPC分类号： H01L27/14812 ,  H01L29/768

摘要： A solid-state image pickup element comprises a first-conductive type planar semiconductor layer formed on a second-conductive type planar semiconductor layer, a hole portion formed in the first-conductive type planar semiconductor layer to define a hole therein, and a first-conductive type high-concentration impurity region formed in a bottom wall of the hole portion. The solid-state image pickup element also includes a first-conductive type high-concentration impurity-doped element isolation region, a second-conductive type photoelectric conversion region, a transfer electrode formed on the sidewall of the hole portion through a gate dielectric film, a second-conductive type CCD channel region, and a read channel formed in a region of the first-conductive type planar semiconductor layer sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region.

摘要翻译： 固态摄像元件包括形成在第二导电型平面半导体层上的第一导电型平面半导体层，形成在第一导电型平面半导体层中以在其中限定孔的孔部分， 形成在孔部的底壁上的导电型高浓度杂质区。 固态摄像元件还包括第一导电型高浓度杂质掺杂元件隔离区域，第二导电型光电转换区域，通过栅极电介质膜形成在孔部分的侧壁上的转移电极， 第二导电型CCD沟道区和形成在第二导电型光电转换区和第二导电型CCD沟道区之间的第一导电型平面半导体层的区域中的读通道。

公开(公告)号：US08114695B2

公开(公告)日：2012-02-14

申请号：US12970272

申请日：2010-12-16

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L27/14812 ,  H01L29/768

摘要： A method of producing a solid-state image pickup element includes forming a hole portion, forming a first-conductive type high-concentration impurity region in a bottom wall of the hole portion, and forming a first-conductive type high-concentration impurity-doped element isolation region in a part of a sidewall of the hole portion and connected to the first-conductive type high-concentration impurity region. The method also includes forming a second-conductive type photoelectric conversion region beneath the first-conductive type high-concentration impurity region and adapted to undergo a change in charge amount upon receiving light, and forming a transfer electrode formed on the sidewall of the hole portion through a gate dielectric film. The method further includes forming a second-conductive type CCD channel region in a top surface of the first-conductive type planar semiconductor layer, and forming a read channel sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region.

摘要翻译： 固体摄像元件的制造方法包括形成孔部，在该孔部的底壁形成第一导电型高浓度杂质区，形成第一导电型高浓度杂质掺杂物 元件隔离区域，并且与第一导电型高浓度杂质区域连接。 该方法还包括在第一导电型高浓度杂质区之下形成第二导电型光电转换区，并适于在接收光时经历电荷量的变化，并且形成在孔部分的侧壁上形成的转移电极 通过栅极电介质膜。 该方法还包括在第一导电型平面半导体层的顶表面中形成第二导电型CCD沟道区，并形成夹在第二导电型光电转换区和第二导电型CCD通道之间的读通道 地区。

公开(公告)号：US20110220972A1

公开(公告)日：2011-09-15

申请号：US13115715

申请日：2011-05-25

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L27/148

CPC分类号： H01L27/14812 ,  H01L29/768

摘要： It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a ratio of a surface area of a light-receiving section to the overall surface area of one pixel. The solid-state image pickup element comprises a first-conductive type planar semiconductor layer formed on a second-conductive type planar semiconductor layer, a hole portion formed in the first-conductive type planar semiconductor layer to define a hole therein, a first-conductive type high-concentration impurity region formed in a bottom wall of the hole portion, a first-conductive type high-concentration impurity-doped element isolation region formed in a part of a sidewall of the hole portion and connected to the first-conductive type high-concentration impurity region, a second-conductive type photoelectric conversion region formed beneath the first-conductive type high-concentration impurity region and in a part of a lower region of the remaining part of the sidewall of the hole portion, and adapted to undergo a change in charge amount upon receiving light, a transfer electrode formed on the sidewall of the hole portion through a gate dielectric film, a second-conductive type CCD channel region formed in a top surface of the first-conductive type planar semiconductor layer and in a part of an upper region of the remaining part of the sidewall of the hole portion, and a read channel formed in a region of the first-conductive type planar semiconductor layer sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region.

公开(公告)号：US07960762B2

公开(公告)日：2011-06-14

申请号：US12509239

申请日：2009-07-24

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L27/148

CPC分类号： H01L27/14812 ,  H01L27/14837 ,  H01L31/035281 ,  H01L31/03529 ,  Y02E10/50

摘要： It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.

摘要翻译： 本发明的目的是提供一种CCD固态图像传感器，其中读取通道的面积减小，并且光接收部分（光电二极管）到一个像素的区域的表面积的比率增加。 提供了一种固态图像传感器，包括：第一导电型半导体层; 形成在第一导电型半导体层上的第一导电型柱状半导体层; 第二导电型光电转换区，形成在第一导电型柱状半导体层的顶部，光电转换区域的电荷量由光改变; 以及形成在所述第二导电型光电转换区域的表面上的所述第一导电类型的高浓度杂质区域，所述杂质区域与所述第一导电型柱状半导体层的顶端隔开预定距离， 其中，在所述第一导电型柱状半导体层的侧面经由栅极绝缘膜形成有转印电极，在所述转印电极的下方形成第二导电型CCD沟道区，在所述第二导电型柱状半导体层之间的区域形成读取沟道 第二导电型光电转换区域和第二导电型CCD沟道区域。

公开(公告)号：US20110062521A1

公开(公告)日：2011-03-17

申请号：US12882698

申请日：2010-09-15

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L27/092

CPC分类号： H01L29/7827 ,  H01L21/823885 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78642

摘要： A semiconductor device according to the present invention comprises a first transistor and a second transistor, and functions as an inverter. The first transistor includes an island semiconductor layer, a first gate insulating film surrounding the periphery of the island semiconductor layer, a gate electrode surrounding the periphery of the first gate insulating film, p+-type semiconductor layers formed in the upper and lower part of the island semiconductor layer, respectively. The second transistor includes the gate electrode, a second gate insulating film surrounding a part of the periphery of the gate electrode, an arcuate semiconductor layer contacting a part of the periphery of the second gate insulating film, n+-type semiconductor layers formed in the upper and lower part of the arcuate semiconductor layer, respectively. A first contact electrically connects the p+-type semiconductor layer in the first transistor and the n+-type semiconductor layer in the second transistor.

摘要翻译： 根据本发明的半导体器件包括第一晶体管和第二晶体管，并且用作反相器。 第一晶体管包括岛状半导体层，围绕岛状半导体层的周围的第一栅极绝缘膜，围绕第一栅极绝缘膜的周围的栅电极，形成在第一栅极绝缘膜的上部和下部的p +型半导体层 岛半导体层。 第二晶体管包括栅电极，围绕栅电极的周边的一部分的第二栅极绝缘膜，与第二栅极绝缘膜的周边的一部分接触的弓形半导体层，形成在上部的n +型半导体层 和下半部分的弧形半导体层。 第一接触电连接第一晶体管中的p +型半导体层和第二晶体管中的n +型半导体层。

公开(公告)号：US07872287B2

公开(公告)日：2011-01-18

申请号：US12268126

申请日：2008-11-10

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14679 ,  H01L27/14683

摘要： It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention. The solid-state imaging device comprises a signal line formed on the substrate, an island shaped semiconductor placed over the signal line, and a pixel selection line connected to an upper portion of the island shaped semiconductor. The island shaped semiconductor comprises a first semiconductor layer disposed in a lower portion of the island shaped semiconductor and connected to the signal line, a second semiconductor layer disposed adjacent to an upper side of the first semiconductor layer, a gate connected to the second semiconductor layer via an insulating film, an electric charge accumulator comprising a third semiconductor layer connected to the second semiconductor layer and carrying a quantity of electric charges which varies in response to a light reception, and a fourth semiconductor layer disposed adjacent to an upper side of the second semiconductor layer and the third semiconductor layer and connected to the pixel selection line. The solid-state imaging devices are arranged on the substrate in a honeycomb configuration.

摘要翻译： 本发明的目的是提供一种具有高比率的光接收元件与一个像素的表面积的比率的图像传感器。 上述目的通过本发明的固态成像装置单元实现，该装置包括布置在根据本发明的基板上的固态成像装置。 固态成像装置包括形成在基板上的信号线，放置在信号线上的岛状半导体以及连接到岛状半导体的上部的像素选择线。 岛状半导体包括设置在岛状半导体的下部并连接到信号线的第一半导体层，邻近第一半导体层的上侧设置的第二半导体层，连接到第二半导体层的栅极 通过绝缘膜，电荷累加器，包括连接到第二半导体层的第三半导体层，并且承载响应于光接收而变化的电荷量;以及第四半导体层，邻近第二半导体层 半导体层和第三半导体层，并连接到像素选择线。 固态成像装置以蜂窝结构布置在基板上。

公开(公告)号：US20090161441A1

公开(公告)日：2009-06-25

申请号：US12319770

申请日：2009-01-12

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： G11C16/06 ,  H01L29/788

CPC分类号： G11C16/0416 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

摘要： To provide a NOR-type nonvolatile semiconductor memory that can inject electric charge into a charge accumulation layer through the use of an FN tunnel current without compromising an increase in the packing density of memory cells. The above problem is solved by a nonvolatile semiconductor memory in which nonvolatile semiconductor memory cells are arranged in a matrix, each nonvolatile semiconductor memory cell having an island semiconductor layer in which a drain diffusion layer formed in the upper part of the island semiconductor layer, a source diffusion layer formed in the lower part of the island semiconductor layer, a charge accumulation layer formed on a channel region of the side wall sandwiched between the drain diffusion layer and the source diffusion layer via a gate insulation film, and a control gate formed on the charge accumulation layer are formed. Further, bit lines connected to the drain diffusion layer are laid out in a column direction, control gate lines are laid out in a row direction, and source lines connected to the source diffusion layer are laid out in the column direction.

摘要翻译： 提供一种NOR型非易失性半导体存储器，其可以通过使用FN隧道电流将电荷注入电荷累积层，而不会影响存储单元的堆积密度的增加。 上述问题是通过非易失性半导体存储器来解决的，其中非易失性半导体存储单元被排列成矩阵，每个非易失性半导体存储单元具有岛状半导体层，其中形成在岛状半导体层的上部的漏极扩散层， 形成在岛状半导体层的下部的源极扩散层，形成在通过栅极绝缘膜夹在漏极扩散层和源极扩散层之间的侧壁的沟道区域上的电荷累积层，以及形成在栅极绝缘膜上的控制栅极 形成电荷累积层。 此外，连接到漏极扩散层的位线沿列方向布置，控制栅极线布置在行方向上，并且连接到源极扩散层的源极线在列方向上布置。

公开(公告)号：US08610202B2

公开(公告)日：2013-12-17

申请号：US12894923

申请日：2010-09-30

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/1203 ,  H01L21/823885 ,  H01L21/84 ,  H01L29/78642

摘要： There is provided a semiconductor device which has a CMOS inverter circuit and which can accomplish high-integration by configuring an inverter circuit with a columnar structural body. A semiconductor device includes a columnar structural body which is arranged on a substrate and which comprises a p-type silicon, an n-type silicon, and an oxide arranged between the p-type silicon and the n-type silicon and running in the vertical direction to the substrate, n-type high-concentration silicon layers arranged on and below the p-type silicon, p-type high-concentration silicon layers arrange on and below the n-type silicon, an insulator which surrounds the p-type silicon, the n-type silicon, and the oxide, and which serves as a gate insulator, and a conductive body which surrounds the insulator and which serves as a gate electrode.

摘要翻译： 提供了具有CMOS反相器电路的半导体器件，其可以通过配置具有柱状结构体的逆变器电路来实现高集成度。 半导体器件包括柱状结构体，其被布置在衬底上，并且包括p型硅，n型硅和布置在p型硅和n型硅之间并在垂直方向上运行的氧化物 朝向衬底的方向，配置在p型硅和p型硅以上的n型高浓度硅层，p型高浓度硅层布置在n型硅的上方和下方，围绕p型硅的绝缘体 ，n型硅和氧化物，并且其用作栅极绝缘体，以及包围绝缘体并用作栅电极的导电体。

公开(公告)号：US08513717B2

公开(公告)日：2013-08-20

申请号：US13328574

申请日：2011-12-16

申请人： Fujio Masuoka ,  Hiroki Nakamura

发明人： Fujio Masuoka ,  Hiroki Nakamura

IPC分类号： H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823885 ,  H01L21/823487 ,  H01L27/0207 ,  H01L27/1104

摘要： A first driver transistor includes a first gate insulating film that surrounds a periphery of a first island-shaped semiconductor, a first gate electrode having a first surface that is in contact with the first gate insulating film, and first and second first-conductivity-type high-concentration semiconductors disposed on the top and bottom of the first island-shaped semiconductor, respectively. A first load transistor includes a second gate insulating film having a first surface that is in contact with a second surface of the first gate electrode, a first arcuate semiconductor formed so as to be in contact with a portion of a second surface of the second gate insulating film, and first and second second-conductivity-type high-concentration semiconductors disposed on the top and bottom of the first arcuate semiconductor, respectively. A first gate line extends from the first gate electrode and is made of the same material as the first gate electrode.

摘要翻译： 第一驱动器晶体管包括围绕第一岛状半导体的周边的第一栅极绝缘膜，具有与第一栅极绝缘膜接触的第一表面的第一栅极电极和第一和第二第一导电型 分别设置在第一岛状半导体的顶部和底部的高浓度半导体。 第一负载晶体管包括具有与第一栅电极的第二表面接触的第一表面的第二栅极绝缘膜，形成为与第二栅极的第二表面的一部分接触的第一弧形半导体 绝缘膜以及设置在第一弧形半导体的顶部和底部的第一和第二第二导电型高浓度半导体。 第一栅极线从第一栅电极延伸并且由与第一栅电极相同的材料制成。