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    Method for manufacturing SiC semiconductor device
    71.
    发明授权
    Method for manufacturing SiC semiconductor device 有权
    SiC半导体器件的制造方法

    公开(公告)号：US07851382B2

    公开(公告)日：2010-12-14

    申请号：US12155020

    申请日：2008-05-29

    申请人： Hiroki Nakamura ,  Hideki Kawahara

    发明人： Hiroki Nakamura ,  Hideki Kawahara

    IPC分类号： H01L21/469

    CPC分类号： H01L21/046 ,  H01L21/0465 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

    摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC layer; annealing the cap layer to be transformed to a carbon layer; annealing the SiC layer to activate the impurity with covering the SiC layer with the carbon layer; removing the carbon layer; and performing a sacrifice oxidation process. The performing the sacrifice oxidation process includes: forming a sacrifice oxide film; and removing the sacrifice oxide film. The forming the oxide film is performed after the performing the sacrifice oxidation process.

    摘要翻译： 一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。 形成杂质层包括：在SiC层中注入杂质; 在SiC层上施加覆盖层; 对盖层进行退火以转变为碳层; 退火SiC层以使碳层覆盖SiC层来激活杂质; 去除碳层; 并进行牺牲氧化处理。 进行牺牲氧化处理包括：形成牺牲氧化膜; 并除去牺牲氧化膜。 在进行牺牲氧化处理之后进行氧化膜的形成。

    Method for manufacturing SiC semiconductor device
    73.
    发明授权
    Method for manufacturing SiC semiconductor device 有权
    SiC半导体器件的制造方法

    公开(公告)号：US07745276B2

    公开(公告)日：2010-06-29

    申请号：US12068263

    申请日：2008-02-05

    申请人： Eiichi Okuno ,  Hiroki Nakamura ,  Naohiro Suzuki

    发明人： Eiichi Okuno ,  Hiroki Nakamura ,  Naohiro Suzuki

    IPC分类号： H01L21/8234

    CPC分类号： H01L29/7828 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

    摘要： A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.

    摘要翻译： 一种制造SiC半导体器件的方法包括：制备具有（11-20）取向表面的SiC衬底; 在衬底上形成漂移层; 在漂移层中形成基极区; 在所述基底区域中形成第一导电类型区域; 在所述基极区上形成沟道区，以在所述漂移层和所述第一导电类型区之间耦合; 在沟道区上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 形成电连接到所述第一导电类型区域的第一电极; 以及在所述衬底的背面上形成第二电极。 该器件通过控制沟道区域来控制第一和第二电极之间的电流。 形成基极区域包括外延地形成漂移层上的基极区域的下部。

    Semiconductor device
    75.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07663181B2

    公开(公告)日：2010-02-16

    申请号：US11206271

    申请日：2005-08-18

    申请人： Takasumi Ohyanagi ,  Atsuo Watanabe ,  Toshio Sakakibara ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura

    发明人： Takasumi Ohyanagi ,  Atsuo Watanabe ,  Toshio Sakakibara ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura

    IPC分类号： H01L29/72

    CPC分类号： H01L21/823487 ,  H01L29/7722

    摘要： A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.

    摘要翻译： 半导体器件包括：垂直场效应晶体管，其具有在基板基底中的第一导电类型的衬底;形成在衬底的第一表面上的漏电极，形成在衬底的第二表面上的第一导电类型的外延层; 在半导体基底上形成的第一导电类型的源极区域，与源极区欧姆接触的源欧姆接触金属膜，从半导体基底的第二表面形成的沟槽和沿着沟槽形成的第二导电类型的栅极区域 。 半导体器件还包括与沟槽底部的栅极区域的引出层欧姆接触并上升到半导体基底的第二表面的栅极上升金属膜，以及连接到 来自半导体基底的第二表面的栅极上升金属膜。

    Optical pickup
    76.
    发明授权
    Optical pickup 失效
    光学拾音

    公开(公告)号：US07649814B2

    公开(公告)日：2010-01-19

    申请号：US10761386

    申请日：2004-01-22

    申请人： Hideaki Funakoshi ,  Hiroki Nakamura

    发明人： Hideaki Funakoshi ,  Hiroki Nakamura

    IPC分类号： G11B7/095

    CPC分类号： G11B7/0932 ,  G11B7/0935

    摘要： An optical pickup has a lens that is resiliently supported in such a manner as to be displaceable in different directions by pairs of a first wire, a second wire, and a third wire which are attached to a fixing portion by attaching means. The optical pickup includes a lens holder for holding the lens, and a printed circuit board secured to the lens holder. The first, second, and third wires have the same length and are formed of the same material, and are soldered to the printed circuit board at different distances from the attaching means.

    摘要翻译： 光学拾取器具有以能够通过附接装置附接到固定部的第一线，第二线和第三线的成对的不同方向可弹性支撑的透镜。 光学拾取器包括用于保持透镜的透镜保持器和固定到透镜保持器的印刷电路板。 第一，第二和第三导线具有相同的长度并且由相同的材料形成，并且在与连接装置不同的距离处焊接到印刷电路板。

    Method for manufacturing SIC semiconductor device
    79.
    发明申请
    Method for manufacturing SIC semiconductor device 有权
    制造SIC半导体器件的方法

    公开(公告)号：US20080318400A1

    公开(公告)日：2008-12-25

    申请号：US12155766

    申请日：2008-06-10

    申请人： Hiroki Nakamura

    发明人： Hiroki Nakamura

    IPC分类号： H01L21/265

    CPC分类号： H01L29/66068 ,  H01L21/0465 ,  H01L21/324 ,  H01L29/1608 ,  H01L29/7828

    摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC layer; annealing the cap layer to be transformed a carbon layer; annealing the SiC layer to activate the impurity; and removing the carbon layer. The annealing the SiC layer includes: increasing a temperature of the SiC layer from a second temperature to a first temperature within a first time duration; and decreasing the temperature of the SiC layer from the first temperature to the second temperature within a second time duration. The first temperature is equal to or higher than 1800° C., and the second temperature is lower than 1800° C. The first and second time durations are small.

    摘要翻译： 一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。 形成杂质层包括：在SiC层中注入杂质; 在SiC层上施加覆盖层; 使盖层退火以转变碳层; 退火SiC层以激活杂质; 并除去碳层。 SiC层的退火包括：在第一时间内将SiC层的温度从第二温度提高到第一温度; 以及在第二持续时间内将SiC层的温度从第一温度降低到第二温度。 第一温度等于或高于1800℃，第二温度低于1800℃。第一和第二持续时间小。

    SIC semiconductor device with BPSG insulation film and method for manufacturing the same
    80.
    发明申请
    SIC semiconductor device with BPSG insulation film and method for manufacturing the same 有权
    具有BPSG绝缘膜的SIC半导体器件及其制造方法

    公开(公告)号：US20080315211A1

    公开(公告)日：2008-12-25

    申请号：US12153031

    申请日：2008-05-13

    申请人： Hiroyuki Ichikawa ,  Hideki Kawahara ,  Hiroki Nakamura

    发明人： Hiroyuki Ichikawa ,  Hideki Kawahara ,  Hiroki Nakamura

    IPC分类号： H01L29/24 ,  H01L21/04

    CPC分类号： H01L29/66068 ,  H01L21/0485 ,  H01L21/31612 ,  H01L21/3185 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66666 ,  H01L29/7828

    摘要： A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.

    摘要翻译： SiC器件包括：衬底; 漂移层 基地区 源区; 连接漂移层和源极区域的沟道层; 沟道层和源极区上的栅极氧化膜; 栅氧化膜上的栅电极; 具有在栅电极上具有阻挡层和BPSG绝缘膜的接触孔的层间绝缘膜; 源电极，在层间绝缘膜上具有上和下布线电极以及用于连接基极区域和源极区域的接触孔; 和衬底上的漏电极。 阻挡层防止下部布线电极中的Ni成分扩散到BPSG绝缘膜中。