公开(公告)号：US5874195A

公开(公告)日：1999-02-23

申请号：US966791

申请日：1997-11-10

申请人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

发明人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03F7/30

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： Proposed is a novel positive-working photoresist composition of the chemical sensitization type capable of giving a finely patterned resist layer having an excellent cross sectional profile even for a discretely isolated pattern with high sensitivity and high resolution. The composition comprises, besides (a) a compound generating an acid by the irradiation with actinic rays, (b) a resinous ingredient capable of being imparted with increased solubility in an alkaline developer solution in the presence of an acid and (c) an organic solvent which is a ketone, ether or ester as the basic ingredients of the chemical sensitization type photoresist compositions, (d) an N,N-dialkyl carboxylic acid amide such as N,N-dimethyl formamide and N,N-dimethyl acetamide in a specified proportion relative to the component (b).

摘要翻译： 提出了一种新型的化学增感型正性光致抗蚀剂组合物，即使对于具有高灵敏度和高分辨率的离散隔离图案，也能够给出具有优异横截面轮廓的精细图案化的抗蚀剂层。 除了（a）通过光化射线照射产生酸的化合物外，组合物还包含（b）能够在酸存在下赋予碱性显影剂溶液中增加的溶解性的树脂成分，和（c）有机 作为化学增感型光致抗蚀剂组合物的基本成分的酮，醚或酯的溶剂，（d）N，N-二甲基甲酰胺如N，N-二甲基甲酰胺和N，N-二甲基乙酰胺 相对于组分（b）的指定比例。

公开(公告)号：US5800964A

公开(公告)日：1998-09-01

申请号：US717779

申请日：1996-09-24

申请人： Mitsuru Sato ,  Kazuyuki Nitta ,  Hideo Hada ,  Tatsuya Hashiguchi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kazuyuki Nitta ,  Hideo Hada ,  Tatsuya Hashiguchi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Disclosed is a novel and improved photoresist composition which comprises: (A) a film-forming resinous compound which is, in the presence of an acid, subject to a change in the solubility in an alkaline solution; and (B) an acid-generating agent capable of releasing an acid by the exposure to actinic rays which is an oxime sulfonate compound represented by the general formula NC--CR.sup.1 .dbd.N--O--SO.sub.2 --R.sup.2, in which R.sup.1 and R.sup.2 are, each independently from the other, an unsubstituted or halogen-substituted monovalent aliphatic hydrocarbon group, e.g., alkyl, cycloalkyl, alkenyl and cycloalkenyl groups. By virtue of the non-aromatic nature of the component (B) as well as good solubility thereof in organic solvents and high acid strength of the acid released therefrom, the composition is highly transparent to deep ultraviolet light even when the content of the component (B) is relatively large and the photosensitivity of the composition is very high so that the photoresist composition is capable of giving a patterned resist layer having excellent characteristics.

摘要翻译： 公开了一种新颖且改进的光致抗蚀剂组合物，其包含：（A）在酸存在下，在碱溶液中溶解度变化的成膜树脂化合物; 和（B）能够通过暴露于由通式NC-CR1 = NO-SO2-R2表示的肟磺酸盐化合物的光化射线释放酸的酸产生剂，其中R 1和R 2各自独立地为 另一个，未取代或卤素取代的一价脂族烃基，例如烷基，环烷基，烯基和环烯基。 由于组分（B）的非芳香性质以及其在有机溶剂中的良好溶解性和从其释放的酸的高酸强度，组合物对于深紫外光是高度透明的，即使组分（ B）相对较大并且组合物的光敏性非常高，使得光致抗蚀剂组合物能够提供具有优异特性的图案化抗蚀剂层。

公开(公告)号：US5795702A

公开(公告)日：1998-08-18

申请号：US717778

申请日：1996-09-24

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

IPC分类号： C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  G03C5/00 ,  C11D9/04

CPC分类号： G03F7/425

摘要： The improved photoresist stripping liquid composition comprises (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 2-20 wt % of an amine having an acid dissociation constant (pKa) of 7.5-13 in aqueous solution at 25.degree. C., (d) 35-80 wt % of a water-soluble organic solvent and (e) 2-20 wt % of a corrosion inhibitor and the. method using this composition are capable of not only efficient removal of modified photoresist films that have been formed by dry etching, ashing, ion implantation and other treatments under hostile conditions but also effective prevention of the corrosion that would otherwise occur in substrates irrespective of whether they are overlaid with Al or Al alloy layers or Ti layers.

摘要翻译： 改进的光致抗蚀剂剥离液体组合物包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）2-20重量％的具有酸解离常数（pKa）的胺 在25℃的水溶液中为7.5-13，（d）35-80重量％的水溶性有机溶剂和（e）2-20重量％的缓蚀剂， 使用该组合物的方法不仅能够有效去除在恶劣条件下通过干法蚀刻，灰化，离子注入和其它处理形成的改性光致抗蚀剂膜，而且可以有效地防止否则会在基材中发生的腐蚀，而不管它们是否 覆盖有Al或Al合金层或Ti层。

公开(公告)号：US5631314A

公开(公告)日：1997-05-20

申请号：US427900

申请日：1995-04-26

申请人： Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

发明人： Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

IPC分类号： C08F2/44 ,  G03F7/004 ,  G03F7/09 ,  C08L101/04

CPC分类号： G03F7/0048 ,  G03F7/091

摘要： A liquid coating composition for forming an anti-interference film over a photoresist film is prepared by combining a water-soluble, film-forming component with a specified fluorosurfactant or by combining said water-soluble, film-forming component with a fluoro-surfactant and a specified anionic surfactant. A coating film is formed from said liquid coating composition over a photoresist film to produce a photoresist material of a dual structure. The photoresist material is particularly effective in lessening the multiple-interference effect of light, thereby enabling the formation of very fine resist patterns having high fidelity to mask patterns.

摘要翻译： 通过将水溶性成膜组分与特定的含氟表面活性剂组合或将所述水溶性成膜组分与氟表面活性剂组合，制备用于在光致抗蚀剂膜上形成抗干扰膜的液体涂料组合物， 指定的阴离子表面活性剂。 在光致抗蚀剂膜上由所述液体涂料组合物形成涂膜以产生具有双重结构的光致抗蚀剂材料。 光致抗蚀剂材料在减轻光的多重干涉效应方面特别有效，从而能够形成对掩模图案具有高保真度的非常精细的抗蚀剂图案。

公开(公告)号：US5614271A

公开(公告)日：1997-03-25

申请号：US692187

申请日：1996-08-05

申请人： Tatsuhiko Shibuya ,  Susumu Okano ,  Hideya Kobari ,  Yoshio Hagiwara ,  Toshimasa Nakayama

发明人： Tatsuhiko Shibuya ,  Susumu Okano ,  Hideya Kobari ,  Yoshio Hagiwara ,  Toshimasa Nakayama

IPC分类号： B05D3/06 ,  B05D7/00 ,  B05D7/24 ,  C04B41/50 ,  C09D183/00 ,  C09D183/16 ,  C23C18/12 ,  C23C18/14 ,  H01L21/316 ,  B29C71/02

CPC分类号： H01L21/316 ,  C04B41/5035 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/14 ,  C04B2111/00844

摘要： Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.

摘要翻译： 提出了在半导体器件的制造中在硅晶片等基板的表面上形成二氧化硅类涂膜的改进方法，其中通过用含聚硅氮烷的涂布溶液涂布基板表面，随后将涂层转化 聚硅氮烷层形成二氧化硅基涂膜。 该方法包括以规定的加热速度按照加热方案干燥聚硅氮烷的涂层，连续或逐步升高温度至240℃至350℃，然后在远紫外光的温度下进行辐射处理 240℃至350℃，然后在350℃至800℃下进行烘烤处理。

公开(公告)号：US06225030B1

公开(公告)日：2001-05-01

申请号：US09260051

申请日：1999-03-02

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

IPC分类号： G03F740

CPC分类号： G03F7/425

摘要： A post-ashing treating method for substrates comprising the following steps: forming a photoresist layer on a substrate having metallic layer(s) thereon; selectively exposing the photoresist layer to light; developing the light-exposed photoresist layer to provide a photoresist pattern; etching the substrate through the photoresist pattern as a mask pattern to form a metallic wired pattern; ashing the photoresist pattern; and after the completion of the ashing, bringing the substrate into contact with a treating liquid composition to thereby treat the substrate; characterized in that said treating liquid composition is one which comprises: (a) 0.5-10 wt % of a lower alkyl quaternary ammonium salt; (b) 1-50 wt % of a polyhydric alcohol; and (c) water as the balance. The post-ashing treating method for substrates provided by the present invention makes it possible to efficiently remove residues formed by dry etching followed by ashing under strict conditions and to achieve favorable corrosion-inhibiting effects on the substrates.

摘要翻译： 一种用于基板的后灰化处理方法，包括以下步骤：在其上具有金属层的基板上形成光致抗蚀剂层; 选择性地将光致抗蚀剂层曝光; 显影曝光的光致抗蚀剂层以提供光致抗蚀剂图案; 通过光致抗蚀剂图案蚀刻基板作为掩模图案以形成金属布线图案; 灰化光致抗蚀剂图案; 并且在灰化完成之后，使基板与处理液体组合物接触，从而处理基板; 其特征在于所述处理液体组合物是包含：（a）0.5-10重量％的低级烷基季铵盐的组合物; （b）1-50重量％的多元醇; 和（c）水作为平衡。 通过本发明提供的基板的后灰化处理方法，可以有效地除去由干蚀刻形成的残留物，在严格条件下进行灰化，并对基板实现良好的腐蚀抑制效果。

公开(公告)号：US06171749B2

公开(公告)日：2001-01-09

申请号：US09239798

申请日：1999-01-29

申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/038 ,  Y10S430/106

摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.

摘要翻译： 公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）辐射敏感性产酸剂和（C）交联剂作为必要成分。 特征地，组分（B）是指定比例的产生卤代酸的化合物和双（烷基磺酰基）重氮甲烷化合物的组合。 由于该组合物的这种独特配方，光致抗蚀剂组合物可以在高感光度下得到具有优异正交横截面轮廓的图案化抗蚀剂层。

公开(公告)号：US6159652A

公开(公告)日：2000-12-12

申请号：US20408

申请日：1998-02-09

申请人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.

摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。

公开(公告)号：US6083665A

公开(公告)日：2000-07-04

申请号：US273262

申请日：1999-03-22

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US6071673A

公开(公告)日：2000-06-06

申请号：US138073

申请日：1998-08-21

申请人： Etsuko Iguchi ,  Toshimasa Nakayama ,  Taiichiro Aoki

发明人： Etsuko Iguchi ,  Toshimasa Nakayama ,  Taiichiro Aoki

IPC分类号： G03F7/004 ,  C09D5/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： The present invention provides a method for the formation of a pattern, which comprises applying an antireflective coating film-forming composition solution comprising (A) a compound which undergoes crosslinking reaction when irradiated with actinic rays and (B) a dye to a substrate to form a coating film thereon, entirely irradiating the coating film with actinic rays to form an antireflective coating film, applying a resist solution to the antireflective coating film, drying the coated material to form a resist layer, and then subjecting the coated material to lithographic treatment to form a resist pattern on the antireflective coating film. The method enables the formation of a resist pattern having an excellent dimensional accuracy and section shape without causing the formation of an intermixed layer between the resist composition and antireflective coating film.

摘要翻译： 本发明提供了形成图案的方法，其包括施加抗反射涂膜组合物溶液，其包含（A）当用光化射线照射时经历交联反应的化合物和（B）染料至基底以形成 其上涂覆膜，用光化射线全面照射涂膜以形成抗反射涂膜，将抗蚀剂溶液施加到抗反射涂膜上，干燥涂覆的材料以形成抗蚀剂层，然后将涂覆的材料进行平版印刷处理 在抗反射涂膜上形成抗蚀剂图案。 该方法能够形成具有优异的尺寸精度和截面形状的抗蚀剂图案，而不会在抗蚀剂组合物和抗反射涂膜之间形成混合层。