Abstract:
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
Abstract:
According to one embodiment, a camera shake correction device includes a substrate, a fixed part, a linking part, a movable part, a first spring part, a second spring part, a first damper, and a second damper. The fixed part is provided on the substrate and fixed to the substrate. The linking part is provided around the fixed part on the substrate that can move in a first direction within a plane of the substrate with respect to the fixed part. The movable part is provided on the substrate and arranged around the fixed part and the linking part that can move in a second direction that intersects with the first direction within the plane of the substrate.
Abstract:
According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.
Abstract:
A radiation detection apparatus according to an embodiment includes: a scintillator including a fluorescent material to convert radiation to visible radiation photon; a photon detection device array having a plurality of cells each of which includes a photon detection device to detect visible radiation photon emitted from a fluorescent material in the scintillator and convert the visible radiation photon to an electric signal; and a plurality of lenses provided on cells respectively in association with the cells to cause the visible radiation photon to be incident on the photon detection device in an associated cell.
Abstract:
An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.
Abstract:
An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.
Abstract:
A sensor apparatus for detecting a positional relationship includes a first electrode, an applying unit applying a charging signal with a first cycle period to the first electrode, a second electrode, a selecting unit selecting the first or second cycle period which have overlapped segment periods, an output unit outputting electrical signals supplied from the second electrode with the first cycle period, if the first cycle period is selected, and parts of the electrical signals during the segment periods, if the second cycle period is selected, a comparator comparing an amplitude of the electrical signals with a threshold value and generating a first or second comparison signal and a controller generating a proximity and non-proximity signal in response to the first and second comparison signal, respectively, so that the selecting unit selects the first and second cycle period in response to the proximity and non-proximity signal, respectively.
Abstract:
According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.
Abstract:
This disclosure concerns an image sensor including: an imaging area; row selection lines; and column signal lines, wherein a pixel includes: a photodiode; a capacitor connected to the photodiode at a first node; a reset transistor connected between the first node and a first power supply; a comparator comparing the potential of the first node with a reference voltage, and outputting a result to a gate of the reset transistor; a counter connected to the comparator, counting an inversion count of an output signal from the comparator, and outputting a digital value according to the inversion count, the output signal being generated from the comparator when the potential of the first node reaches the potential of the first power supply; and a selection transistor connected between the counter and one of the plurality of column signal lines, and having a gate connected to one of the row selection lines.
Abstract:
A sensor device which detects a positional relationship between an first member and second member, includes a signal source generating an electrical signal, a first electrode receiving the electrical signal and storing an electrical charge at a first part on the first member, a second electrode inducing an electrical charge at the second part on the second member, a third electrode inducing an electrical charge at the third part on the second member, a fourth electrode inducing an electrical charge at the fourth part on the first member, a reference electrode disposed at a fifth part on the second member to be connected to a reference voltage point, a fifth electrode inducing an electrical charge at the sixth part on the first member, and a differential amplifier amplifying a voltage difference between the fourth electrode and the fifth electrode and outputting a difference signal.